Patents by Inventor Hideo Yoshino

Hideo Yoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8669858
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to an outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device in response to occurrence of a vehicle condition. The notification sound control device setting the movement notification sound of the sound emitting device to a frequency in a range of 1.5 kHz to 6 kHz.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: March 11, 2014
    Assignee: Nissan Motor Co, Ltd.
    Inventors: Hideo Yoshino, Tsuyoshi Kanuma, Hironori Saito, Katsumi Kimura, Yuji Watanabe, Toshiyuki Yamamoto
  • Patent number: 8665081
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits forward and reverse advancement notification sounds outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device operates the sound emitting device to selectively emit the forward and reverse movement notifications. The notification sound control device includes forward and reverse advancement notification sound emission timing sections. A start timing of the forward advancement notification sound is set in response to both a forward movement shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed. A start timing of the reverse movement notification sound is set to be emitted immediately in response to the reverse movement shift operation having been performed.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: March 4, 2014
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Hideo Yoshino, Tsuyoshi Kanuma, Hironori Saito, Katsumi Kimura, Yuji Watanabe, Toshiyuki Yamamoto
  • Patent number: 8599006
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device to emit a movement notification during a period from when a vehicle speed becomes equal to or smaller than a prescribed value until a prescribed amount of time has elapsed in a situation where the vehicle speed becomes equal to or smaller than the prescribed value while the forward movement notification sound is being emitted.
    Type: Grant
    Filed: February 7, 2011
    Date of Patent: December 3, 2013
    Assignee: Nissan Motor Co., Ltd.
    Inventors: Hironori Saito, Katsumi Kimura, Tsuyoshi Kanuma, Hideo Yoshino, Yuji Watanabe, Toshiyuki Yamamoto
  • Patent number: 8404547
    Abstract: Provided is a manufacturing method for an offset MOS transistor capable of operating safely even under a voltage of 50 V or higher. In the offset MOS transistor which includes a LOCOS oxide film, the LOCOS oxide film formed in a periphery of a drain diffusion layer, in which a high withstanding voltage is required, is etched, and the drain diffusion layer is formed so as to spread into a surface region of a semiconductor substrate located below a region in which the LOCOS oxide film is thinned. As a result, end portions of the drain diffusion layer are covered by an offset diffusion layer, whereby electric field concentration occurring in a region of a lower portion of the drain diffusion layer can be relaxed.
    Type: Grant
    Filed: July 28, 2009
    Date of Patent: March 26, 2013
    Assignee: Seiko Instruments Inc.
    Inventors: Yuichiro Kitajima, Hideo Yoshino
  • Publication number: 20130009769
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device to emit a movement notification during a period from when a vehicle speed becomes equal to or smaller than a prescribed value until a prescribed amount of time has elapsed in a situation where the vehicle speed becomes equal to or smaller than the prescribed value while the forward movement notification sound is being emitted.
    Type: Application
    Filed: February 7, 2011
    Publication date: January 10, 2013
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Hironori Saito, Katsumi Kimura, Tsuyoshi Kanuma, Hideo Yoshino, Yuji Watanabe, Toshiyuki Yamamoto
  • Publication number: 20120299716
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits forward and reverse advancement notification sounds outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device operates the sound emitting device to selectively emit the forward and reverse movement notifications. The notification sound control device includes forward and reverse advancement notification sound emission timing sections. A start timing of the forward advancement notification sound is set in response to both a forward movement shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed. A start timing of the reverse movement notification sound is set to be emitted immediately in response to the reverse movement shift operation having been performed.
    Type: Application
    Filed: February 7, 2011
    Publication date: November 29, 2012
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Hideo Yoshino, Tsuyoshi Kanuma, Hironori Saito, Katsumi Kimura, Yuji Watanabe, Toshiyuki Yamamoto
  • Publication number: 20120299717
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to an outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device in response to occurrence of a vehicle condition. The notification sound control device setting the movement notification sound of the sound emitting device to a frequency in a range of 1.5 kHz to 6 kHz.
    Type: Application
    Filed: February 7, 2011
    Publication date: November 29, 2012
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Hideo Yoshino, Tsuyoshi Kanuma, Hironori Saito, Katsumi Kimura, Yuji Watanabe, Toshiyuki Yamamoto
  • Publication number: 20120299718
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle is moving at a low speed. The notification sound control device operates the sound emitting device to selectively emit the movement notification sound. The notification sound control device includes a notification sound prohibiting section and a prohibition cancelling section. The notification sound prohibiting section prohibits an emission of the movement notification sound by the sound emitting device. The prohibition cancelling section cancels a notification sound emission prohibition imposed by the notification sound prohibiting section either upon a vehicle speed of the vehicle exceeding a prescribed vehicle speed or based on position information of the vehicle.
    Type: Application
    Filed: February 7, 2011
    Publication date: November 29, 2012
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Hideo Yoshino, Tsuyoshi Kanuma, Yoshiro Tateishi, Hironori Saito, Katsumi Kimura
  • Publication number: 20120296520
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a first sound emitting device, a second sound emitting device and a notification sound control device. The first sound emitting device emits a first intermittent notification sound inside a cabin interior of a vehicle. The second sound emitting device emits a second intermittent notification sound outside of the cabin interior of the vehicle. The notification sound control device operates the first and second sound emitting devices to separately emit the first and second intermittent notification sounds in at least a partially overlapping pattern in response to occurrence of a vehicle condition to convey a same type of vehicle information to both inside and outside of the cabin interior of the vehicle. The notification sound control device includes a cabin interior-exterior notification sound synchronizing section that is configured to synchronize the first and second intermittent notification sounds.
    Type: Application
    Filed: February 7, 2011
    Publication date: November 22, 2012
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Hironori Saito, Katsumi Kimura, Tsuyoshi Kanuma, Hideo Yoshino, Yuji Watanabe, Toshiyuki Yamamoto
  • Publication number: 20120293318
    Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits a starting movement notification sound to outside of a vehicle to inform a person in an outside area surrounding the vehicle that the vehicle will transition from a stopped state to a moving state, and emits a moving notification sound to outside of the vehicle to inform a person in the outside area surrounding the vehicle that the vehicle is moving. The notification sound control device operates the sound emitting device to selectively emit the starting movement notification sound. The notification sound control device includes a notification sound emission timing section that sets a start timing of the starting movement notification sound in response to a shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed.
    Type: Application
    Filed: February 7, 2011
    Publication date: November 22, 2012
    Applicant: NISSAN MOTOR CO., LTD.
    Inventors: Hironori Saito, Katsumi Kimura, Tsuyoshi Kanuma, Hideo Yoshino, Yuji Watanabe, Toshiyuki Yamamoto
  • Publication number: 20120228721
    Abstract: In a gate electrode (40) provided on a gate insulating film (30), a depletion layer (42) is formed at a junction surface between a P-type semiconductor layer (41) and a gate insulating film (30). Since a region of the depletion layer (42) inside the gate electrode (40) changes due to temperature change, inducing a change in an effect of a gate voltage to channel formation, a threshold voltage changes to a larger extent than in a case of a typical MOS transistor. This is used to control the MOS transistor to have a desired temperature characteristic. A temperature compensation circuit may be eliminated and the circuit scale may be reduced.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 13, 2012
    Inventor: Hideo YOSHINO
  • Patent number: 8263443
    Abstract: Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: September 11, 2012
    Assignee: Seiko Instruments Inc.
    Inventors: Hideo Yoshino, Hisashi Hasegawa
  • Patent number: 8174309
    Abstract: Provided is a reference voltage circuit in which a temperature characteristic of a reference voltage is excellent and a circuit scale is small. In the reference voltage circuit, for example, a temperature correction circuit separated from the reference voltage circuit is not used and a difference voltage between threshold voltages of two E-type NMOS transistors (14 and 15) is added to a threshold voltage of a D-type NMOS transistor to generate a reference voltage (Vref). Therefore, the influence of the D-type NMOS transistor on the reference voltage (Vref), which is a degradation factor of the temperature characteristic of the reference voltage (Vref), may be reduced to suppress a change in tilt and curve of the reference voltage (Vref) with respect to a temperature.
    Type: Grant
    Filed: September 23, 2010
    Date of Patent: May 8, 2012
    Assignee: Seiko Instruments Inc.
    Inventors: Hideo Yoshino, Takashi Imura
  • Patent number: 8129820
    Abstract: A bipolar transistor for semiconductor device has a collector region having a first conductivity type disposed on a surface of a semiconductor substrate having the first conductivity type. A base region having a second conductivity type is disposed in the collector region. An emitter region having the first conductivity type is disposed in the base region. A high concentration first conductivity type region for a collector electrode is disposed in the collector region. A high concentration second conductivity type region for a base electrode is disposed in the base region. The high concentration first conductivity type region for a collector electrode and the high concentration second conductivity type region for a base electrode contact directly with each other so that the collector region and the base region have a same potential.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: March 6, 2012
    Assignee: Seiko Instruments Inc.
    Inventors: Hideo Yoshino, Hisashi Hasegawa
  • Publication number: 20110074496
    Abstract: Provided is a reference voltage circuit in which a temperature characteristic of a reference voltage is excellent and a circuit scale is small. In the reference voltage circuit, for example, a temperature correction circuit separated from the reference voltage circuit is not used and a difference voltage between threshold voltages of two E-type NMOS transistors (14 and 15) is added to a threshold voltage of a D-type NMOS transistor to generate a reference voltage (Vref). Therefore, the influence of the D-type NMOS transistor on the reference voltage (Vref), which is a degradation factor of the temperature characteristic of the reference voltage (Vref), may be reduced to suppress a change in tilt and curve of the reference voltage (Vref) with respect to a temperature.
    Type: Application
    Filed: September 23, 2010
    Publication date: March 31, 2011
    Inventors: Hideo Yoshino, Takashi Imura
  • Publication number: 20110027949
    Abstract: Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.
    Type: Application
    Filed: October 8, 2010
    Publication date: February 3, 2011
    Inventors: Hideo YOSHINO, Hisashi HASEGAWA
  • Patent number: 7851858
    Abstract: Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: December 14, 2010
    Assignee: Seiko Instruments Inc.
    Inventors: Hideo Yoshino, Hisashi Hasegawa
  • Publication number: 20100224933
    Abstract: Provided is a semiconductor device including an N-channel high-voltage MOS transistor, in which wiring metal connected to a drain region is laid above a boundary portion between an oxide film formed by LOCOS process or the like on a low impurity concentration region and a high impurity concentration region forming the drain region, to thereby alleviate an electric field concentration at the boundary portion which is a contact portion between the low impurity concentration region and the high impurity concentration region by an electric field generated from the wiring metal toward a semiconductor substrate.
    Type: Application
    Filed: February 5, 2010
    Publication date: September 9, 2010
    Inventors: Hisashi Hasegawa, Hideo Yoshino
  • Patent number: 7750411
    Abstract: Provided is a semiconductor integrated circuit device, which includes: a low-voltage MOS transistor having a source/drain region formed of a low impurity concentration region and a high impurity concentration region; and a high-voltage MOS transistor similarly having a source/drain region formed of a low impurity concentration region and a high impurity concentration region, in which, the source/drain high impurity concentration region of the low-voltage NMOS transistor is doped with arsenic, while the source/drain high impurity concentration region of the high-voltage NMOS transistor is doped with phosphorus.
    Type: Grant
    Filed: June 26, 2007
    Date of Patent: July 6, 2010
    Assignee: Seiko Instruments Inc.
    Inventors: Hirofumi Harada, Hisashi Hasegawa, Hideo Yoshino
  • Publication number: 20100059832
    Abstract: Provided is a semiconductor device including a depletion type MOS transistor and an enhancement type MOS transistor. In the semiconductor device, in order to provide a reference voltage generating circuit having an enhanced temperature characteristic or analog characteristic without increasing an area of the semiconductor device through addition of a circuit, well regions of the depletion type MOS transistor and the enhancement type MOS transistor, which have different concentrations from each other, are formed.
    Type: Application
    Filed: September 9, 2009
    Publication date: March 11, 2010
    Inventors: Hideo Yoshino, Hirofumi Harada, Jun Osanai