Patents by Inventor Hidetaka Kafuku

Hidetaka Kafuku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210158979
    Abstract: A pit gate includes a gate body which is inserted between a pool portion storing water and a canal portion connected to the pool portion and is configured to change a flow state of the water, and a seal portion (6) which is accommodated in a groove-shaped accommodation recess formed in the gate body and seals between the pool portion and the gate body. The seal portion (6) includes a low-rigidity portion (10) which is relatively easily deformed by a load according to a water pressure from the pool portion side, and a high-rigidity portion (11) which is provided on the pool portion side of the low-rigidity portion and is not easily deformed relatively by the load.
    Type: Application
    Filed: September 21, 2018
    Publication date: May 27, 2021
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hiromu Okamoto, Hisanori Watanabe, Hidetaka Kafuku, Shunsuke Tanaka, Hiroki Mitsui, Yasuharu Suda, Takao Ito, Hayao Kurono, Shuhei Dobara, Takumi Hori
  • Patent number: 10914382
    Abstract: A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: February 9, 2021
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Naotaka Komatsu, Takumi Hori, Yuichi Otani, Hidetaka Kafuku, Hiromu Okamoto, Shunsuke Tanaka, Yasushi Takayama, Tomoki Hanada
  • Patent number: 10457424
    Abstract: This flexible thermal-control material (10A) is obtained by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a radiation-crosslinked fluororesin material. Accordingly, a flexible thermal-control material is achieved which satisfies all of a plurality of conditions related to solar absorption (?), total hemispheric infrared ray emissivity (?), radiation resistance, and atomic oxygen resistance.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: October 29, 2019
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Naoki Kusaba, Hidetaka Kafuku, Kenji Najima
  • Patent number: 10220967
    Abstract: This flexible thermal-control material (10A) is obtaining by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a silicone material. Accordingly, a flexible thermal-control material is achieved which exhibits excellent optical characteristics such as solar absorption (?).
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: March 5, 2019
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Naoki Kusaba, Hidetaka Kafuku, Kenji Najima
  • Publication number: 20190063610
    Abstract: A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.
    Type: Application
    Filed: August 23, 2018
    Publication date: February 28, 2019
    Inventors: Naotaka KOMATSU, Takumi HORI, Yuichi OTANI, Hidetaka KAFUKU, Hiromu OKAMOTO, Shunsuke TANAKA, Yasushi TAKAYAMA, Tomoki HANADA
  • Patent number: 9534690
    Abstract: This leakage prevention seal is provided with: a first seal ring which surrounds a rotating shaft and which is in circumferential contact with the surface of a housing which faces the upstream side; a second seal ring, which, on the upstream side of the first seal ring, surrounds the rotating shaft and which is in circumferential contact with the first seal ring; and a heat-driven section which, when high-temperature pressurized water reaches the heat-driven section, reduces the diameter of both the first seal ring and the second seal ring and causes the inner peripheral surfaces of both the first seal ring and the second seal ring to be in contact with the rotating shaft. The circumferential positions of both a first range between the first seal ring and the rotating shaft and a second range formed by the second seal ring are different.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: January 3, 2017
    Assignee: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Hidekazu Uehara, Yukihiro Sakaguchi
  • Publication number: 20160159501
    Abstract: This flexible thermal-control material (10A) is obtaining by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a silicone material. Accordingly, a flexible thermal-control material is achieved which exhibits excellent optical characteristics such as solar absorption (?).
    Type: Application
    Filed: August 26, 2014
    Publication date: June 9, 2016
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Naoki KUSABA, Hidetaka KAFUKU, Kenji NAJIMA
  • Publication number: 20160152353
    Abstract: This flexible thermal-control material (10A) is obtained by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a radiation-crosslinked fluororesin material. Accordingly, a flexible thermal-control material is achieved which satisfies all of a plurality of conditions related to solar absorption (?), total hemispheric infrared ray emissivity (?), radiation resistance, and atomic oxygen resistance.
    Type: Application
    Filed: August 26, 2014
    Publication date: June 2, 2016
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Naoki KUSABA, Hidetaka KAFUKU, Kenji NAJIMA
  • Publication number: 20160010749
    Abstract: This leakage prevention seal is provided with: a first seal ring which surrounds a rotating shaft and which is in circumferential contact with the surface of a housing which faces the upstream side; a second seal ring, which, on the upstream side of the first seal ring, surrounds the rotating shaft and which is in circumferential contact with the first seal ring; and a heat-driven section which, when high-temperature pressurized water reaches the heat-driven section, reduces the diameter of both the first seal ring and the second seal ring and causes the inner peripheral surfaces of both the first seal ring and the second seal ring to be in contact with the rotating shaft. The circumferential positions of both a first range between the first seal ring and the rotating shaft and a second range formed by the second seal ring are different.
    Type: Application
    Filed: December 24, 2013
    Publication date: January 14, 2016
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Hidekazu Uehara, Yukihiro Sakaguchi
  • Patent number: 8889568
    Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.
    Type: Grant
    Filed: May 18, 2011
    Date of Patent: November 18, 2014
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Seiji Nishikawa, Hidetaka Kafuku, Tadashi Shimazu
  • Publication number: 20140057459
    Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.
    Type: Application
    Filed: October 22, 2013
    Publication date: February 27, 2014
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Tadashi Shimazu, Seiji Nishikawa, Hidetaka Kafuku
  • Publication number: 20130109154
    Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.
    Type: Application
    Filed: May 18, 2011
    Publication date: May 2, 2013
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Seiji Nishikawa, Hidetaka Kafuku, Tadashi Shimazu
  • Publication number: 20130071671
    Abstract: Disclosed is a silicon nitride film for a semiconductor element, wherein changes of film stress of the silicon nitride film are suppressed, said silicon nitride film being formed by applying bias power. Also disclosed are a method and an apparatus for manufacturing the silicon nitride film. The silicon nitride film, which is formed on a substrate (19) by plasma processing, and which is to be used in the semiconductor element, has a structure wherein a biased SiN film (31) formed by applying bias to the substrate (19) is sandwiched between an unbiased SiN film (32a) and an unbiased SiN film (32b), which are formed by not applying bias to the substrate (19).
    Type: Application
    Filed: May 11, 2011
    Publication date: March 21, 2013
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Seiji Nishikawa, Hidetaka Kafuku
  • Publication number: 20130049063
    Abstract: Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a substrate (11) and electrode portions (15, 16) and electrode portions (17, 18) which act as electrodes for the multiple semiconductor layers (12-14), an SiN film (31) having a thickness of 35 nm or more and comprising silicon nitride covers the surrounds of the multiple semiconductor layers (12-14), the electrode portions (15, 16) and the electrode portions (17, 18) and an SiO film (32) having a higher thickness than that of the SiN film (31) and comprising silicon oxide covers the surround of the SiN film (31), as protective films for the semiconductor light-emitting element.
    Type: Application
    Filed: February 10, 2011
    Publication date: February 28, 2013
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Toshihiko Nishimori, Hisao Kawasaki
  • Publication number: 20130037850
    Abstract: Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers (12-14) formed on a substrate (11); and electrode sections (15, 16) and other electrode sections (17, 18) that are the electrodes of the plurality of semiconductor layers (12-14)—as the protective film thereof, the surroundings of the plurality of semiconductor layers (12-14), the electrode sections (15, 16), and the other electrode sections (17, 18) are covered by a SiN film (21) comprising silicon nitride of which the quantity of Si—H bonds in the film is less than 1.0×1021 bonds/cm3.
    Type: Application
    Filed: February 10, 2011
    Publication date: February 14, 2013
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Toshihiko Nishimori, Hisao Kawasaki
  • Patent number: 8288294
    Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.
    Type: Grant
    Filed: June 25, 2009
    Date of Patent: October 16, 2012
    Assignees: Mitsubishi Heavy Industries, Ltd., Mitsubishi Electric Corporation
    Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
  • Publication number: 20120002345
    Abstract: A substrate support stage of a plasma processing device, which stably controls a substrate at a relatively high temperature. The substrate support stage includes an electrostatic attraction plate (14) containing a first electrode for holding a substrate (W) by electrostatic attraction, a second electrode for applying a bias to the substrate (W), and a heater for heating the substrate, a cylindrical flange (13) welded to the lower surface of the electrostatic attraction plate (14) and produced from an alloy having the same heat characteristic as the electrostatic attraction plate (14), and a support stage (10) including an O-ring (12) in a surface facing the lower surface of the flange (13), to which the flange (13) is attached via the O-ring (12), wherein when the bias power to be applied to the substrate (W) is changed, the heater power for heating the substrate (W); is changed so that the temperature of the substrate (W) is constant.
    Type: Application
    Filed: September 15, 2009
    Publication date: January 5, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Akihiko Matsukura, Hisashi Yanagida
  • Publication number: 20110266660
    Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.
    Type: Application
    Filed: June 25, 2009
    Publication date: November 3, 2011
    Applicants: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
  • Publication number: 20100310791
    Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.
    Type: Application
    Filed: January 20, 2009
    Publication date: December 9, 2010
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Tadashi Shimazu, Seiji Nishikawa, Hidetaka Kafuku
  • Publication number: 20100236482
    Abstract: An object is to provide a plasma film forming apparatus capable of reducing particles even in the case in which a film is formed by applying a bias to a substrate. In the plasma film forming apparatus in which a bias is applied to a substrate (5) placed on a supporting table (4) in a chamber and forming a thin film on the substrate (5) by using plasma, the supporting table (4) has a columnar supporting table main body (4b) having a contact surface in contact with the substrate (5), the contact surface (4a) having an outer diameter (c) smaller than an outer diameter (W) of the substrate (5); and a flange portion (4c) extended in an outer circumferential direction from a side surface (4d) of the supporting table main body (4b); wherein a predetermined first gap (G1) is formed between the flange portion (4c) and a rear surface of the outer circumference of the substrate (5).
    Type: Application
    Filed: October 14, 2008
    Publication date: September 23, 2010
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hidetaka Kafuku, Tadashi Shimazu, Ryuichi Matsuda, Akihiko Matsukura, Seiji Nishikawa