Abstract: A method of measuring light and elevated temperature induced degradation includes a first step of injecting carriers into p-type crystalline silicon and maintaining the p-type crystalline silicon at 50° C. or higher and 150° C. or lower until the p-type crystalline silicon has reached a regenerated state, measuring a first degradation amount of the p-type crystalline silicon in the first step, performing a heat treatment on the p-type crystalline silicon at higher than 150° C. and 250° C. or lower, a second step of injecting carriers into the p-type crystalline silicon and maintaining the p-type crystalline silicon at 50° C. or higher and 150° C. or lower until the p-type crystalline silicon has reached a regenerated state, measuring a second degradation amount of the p-type crystalline silicon in the second step, and calculating a light and elevated temperature induced degradation amount of the p-type crystalline silicon based on the first and second degradation amounts.

Abstract: An apparatus for predicting useful life of a photovoltaic module includes an input and an output. The input receives first information indicating an amount of hygrothermal stress that a photovoltaic module undergoes from a start until an end of a period during which the photovoltaic module outputs predetermined electric power. The input further receives second information indicating an amount of hygrothermal stress that the photovoltaic module undergoes per a predetermined time in a field where the photovoltaic module is deployed. The second information is generated based on information about daily maximum temperatures of the photovoltaic module in the field where the photovoltaic module is deployed. The output outputs result information about a predicted period during which the photovoltaic module is expected to output the predetermined electric power when the photovoltaic module is deployed in the field.

Abstract: The inspection apparatus includes: a stage that retains the inspection sample; a light irradiator that irradiates the inspection sample with light having a predetermined wavelength to cause the inspection sample to emit a terahertz wave; a detector that detects electric field intensity of the terahertz wave emitted from the inspection sample; and a comparator that compares the electric field intensity of the terahertz wave emitted from the inspection sample to an evaluation reference value. The evaluation reference value is a value (for example, 90% of a saturation value) smaller than an absolute value of the saturation value of the electric field intensity of the terahertz wave, the terahertz wave being generated by irradiating a reference sample, which is a reference of the inspection sample, with the light while different voltages are applied to the reference sample.

Abstract: The inspection apparatus includes: a stage that retains the inspection sample; a light irradiator that irradiates the inspection sample with light having a predetermined wavelength to cause the inspection sample to emit a terahertz wave; a detector that detects electric field intensity of the terahertz wave emitted from the inspection sample; and a comparator that compares the electric field intensity of the terahertz wave emitted from the inspection sample to an evaluation reference value. The evaluation reference value is a value (for example, 90% of a saturation value) smaller than an absolute value of the saturation value of the electric field intensity of the terahertz wave, the terahertz wave being generated by irradiating a reference sample, which is a reference of the inspection sample, with the light while different voltages are applied to the reference sample.

Abstract: The problem addressed by the present invention is providing a technique for fabricating, by a method simpler than conventional methods, a silicon substrate that is effective for light trapping, one surface of which has a textured structure and the other surface of which has higher reflectivity than the surface having the textured structure. The fabrication method for this semiconductor substrate comprises: a sandblasting step in which a first surface of a silicon substrate in an as-sliced state, fabricated by slicing a silicon ingot, is surface treated by sandblasting and, after the sandblasting step, a step for carrying out surface treatment using an etching solution that contains either or both of hydrofluoric acid and nitric acid on the silicon substrate.

Abstract: A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.

Abstract: A photovoltaic device includes a semiconductor substrate, an n-type diffusion layer region and a p-type diffusion layer region formed adjacent to each other on the light-receiving surface of the semiconductor substrate, a first electrode electrically connected to the n-type diffusion layer region, a second electrode electrically connected to the p-type diffusion layer region, an adhesive layer formed on the opposite surface of the semiconductor substrate and containing an inorganic binder and a filler, and a supporting substrate adhered to the adhesive layer.

Abstract: A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.

Abstract: A photovoltaic device includes a semiconductor substrate, an n-type diffusion layer region and a p-type diffusion layer region formed adjacent to each other on the light-receiving surface of the semiconductor substrate, a first electrode electrically connected to the n-type diffusion layer region, a second electrode electrically connected to the p-type diffusion layer region, an adhesive layer formed on the opposite surface of the semiconductor substrate and containing an inorganic binder and a filler, and a supporting substrate adhered to the adhesive layer.

Abstract: A photoelectric element includes a first region having a light-receiving surface. A second region having a short side length not greater than twice the minority carrier diffusion length of the first region is provided on at least one portion of the first region to form a photovoltaic mechanism in conjunction with the first region. A barrier layer is provided to cover at least those portions of the light-receiving surface of the first region not covered by the second region, and a transparent conductive film is provided on the barrier layer and electrically connected to at least one second region. The voltage of the second region generated by incident light is applied through the transparent conductive film to the light-receiving surface of the first region to produce an electric field in the direction inducing majority carriers.