Patents by Inventor Hideto TATENO

Hideto TATENO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9502239
    Abstract: There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: November 22, 2016
    Assignees: HITACHI KOKUSAI ELECTRIC INC., AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.
    Inventors: Masahisa Okuno, Tooru Kakuda, Hideto Tateno, Takuya Joda, Masamichi Kurokawa
  • Publication number: 20160203976
    Abstract: To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.
    Type: Application
    Filed: March 23, 2016
    Publication date: July 14, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuya JODA, Toru KAKUDA, Masahisa OKUNO, Hideto TATENO
  • Publication number: 20160002789
    Abstract: A substrate processing apparatus includes a processing chamber housing a substrate, a vaporizer which vaporizes processing liquid and supply processing gas into the processing chamber, a reserve tank storing the processing liquid, a line switching unit connected to the reserve tank, a tank supply pipe connected to the line switching unit and supplies the processing liquid to the reserve tank, an exhausting unit connected to the line switching unit and exhausts the processing liquid in the reserve tank, and a controlling unit which controls the line switching unit to exhaust the processing liquid for exhausting the processing liquid from the reserve tank to the exhausting unit and exhaust the processing liquid in the pipe for supplying the processing liquid from the tank supply pipe to the exhausting unit before and/or after supplying the processing liquid from the processing liquid supplying pipe to the reserve tank.
    Type: Application
    Filed: September 16, 2015
    Publication date: January 7, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tadashi KONTANI, Hideto TATENO, Atsushi UMEKAWA
  • Patent number: 9190299
    Abstract: An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: November 17, 2015
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Yuichi Wada, Harunobu Sakuma, Hiroshi Ashihara, Hideto Tateno
  • Publication number: 20150262817
    Abstract: There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond; (b) heating the substrate to a first temperature and supplying a process gas to the heated substrate; and (c) heating the substrate to which the process gas has been supplied, to a second temperature which is higher than the first temperature and less than or equal to a temperature at which the pre-bake has been performed.
    Type: Application
    Filed: May 8, 2015
    Publication date: September 17, 2015
    Inventors: Masahisa OKUNO, Tooru KAKUDA, Hideto TATENO, Takuya JODA, Masamichi KUROKAWA
  • Publication number: 20150140835
    Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit.
    Type: Application
    Filed: January 29, 2015
    Publication date: May 21, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto TATENO, Yuichi WADA, Hiroshi ASHIHARA, Keishin YAMAZAKI, Takurou USHIDA, Iwao NAKAMURA, Manabu IZUMI
  • Publication number: 20150132972
    Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid.
    Type: Application
    Filed: January 26, 2015
    Publication date: May 14, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yuichi WADA, Hiroshi ASHIHARA, Hideto TATENO, Harunobu SAKUMA
  • Publication number: 20140302687
    Abstract: A substrate processing apparatus includes: a reaction chamber configured to process a substrate; a vaporizer including a vaporization container into which a processing liquid including hydrogen peroxide or hydrogen peroxide and water is supplied, a processing liquid supply unit configured to supply the processing liquid to the vaporization container, and a heating unit configured to heat the vaporization container; a gas supply unit configured to supply a processing gas generated by the vaporizer into the reaction chamber; an exhaust unit configured to exhaust an atmosphere in the reaction chamber; and a control unit configured to control the heating unit and the processing liquid supply unit such that the processing liquid supply unit supplies the processing liquid to the vaporization container while the heating unit heats the vaporization container.
    Type: Application
    Filed: June 20, 2014
    Publication date: October 9, 2014
    Inventors: Hiroshi ASHIHARA, Harunobu SAKUMA, Hideto TATENO, Yuichi WADA
  • Publication number: 20140256160
    Abstract: An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate.
    Type: Application
    Filed: May 21, 2014
    Publication date: September 11, 2014
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Yuichi Wada, Harunobu Sakuma, Hiroshi Ashihara, Hideto Tateno
  • Publication number: 20140235068
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.
    Type: Application
    Filed: April 30, 2014
    Publication date: August 21, 2014
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Hiroshi ASHIHARA, Tomihiro AMANO, Shin HIYAMA, Harunobu SAKUMA, Yuichi WADA, Hideto TATENO
  • Patent number: D741823
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: October 27, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideto Tateno, Daisuke Hara, Masahisa Okuno, Takuya Joda