Abstract: The present disclosure introduces a simple method for reducing the capacitance of the floating diffusion node of a CMOS image sensor and consequently improving the image sensor's sensitivity. While reducing parasitic capacitances such as the capacitance between the transfer gate and the floating node, the proposed device layouts, in which the channel width of the detection section is different from the channel width of the photoelectric conversion element, demand no more than what is required for the fabrication of the traditional layouts.

Abstract: A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.

Abstract: An active pixel that incorporates elements of CCD technology into a CMOS image sensor is disclosed. Each pixel includes a reset transistor that resets a sense node. The active pixel includes an amplification transistor that is modulated by the signal on the sense node. A light sensing element, such as a photodiode, is provided and its signal is selectively read out by a transfer gate, selectively stored by a memory gate, and finally read out onto the sense node by a control gate. Underneath the memory gate is a memory well that acts as memory for the pixel and stores the signal output by the light sensing element.

Abstract: A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

Abstract: A active pixel sensor cell is disclosed that comprises a pinned photodiode. A transfer transistor is placed between the pinned photodiode and an output node, the transfer transistor being a depletion mode N-type MOSFET. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor has its gate coupled to the output node.

Abstract: The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain.

Abstract: The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain.

Abstract: A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

Abstract: A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

Abstract: The invention is regarding to solid-state imaging device.

Abstract: A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

Abstract: A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.

Abstract: A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

Abstract: The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least two ion implantations.

Abstract: A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

Abstract: A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

Abstract: The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least twice ion implantation.

Abstract: A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

Abstract: An amplifying solid-state image sensor includes a semiconductor substrate, and a plurality of unit pixels arranged on the semiconductor substrate in a two-dimensional manner, in which each of the plurality of unit pixels includes a photodiode for performing the photoelectric conversion, a storage diode for storing electric signal charge obtained by the photodiode, an amplifying transistor for amplifying the electric signal charge stored in the storage diode, and a signal reading section for reading a signal voltage from the amplifying transistor, and in which each of the plurality of unit pixels has a first active region and a second active region in which the second active region has the same conductivity type as that of the semiconductor substrate and an impurity concentration higher than that of the semiconductor substrate, the photodiode in each of the unit pixels is formed in the first active region, and the amplifying transistor is formed in the second region.

Abstract: A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state.