Abstract: A process for producing silicon carbide whiskers by heating a react solid silicon-containing starting material and carbon-containing starting material in a reaction vessel, wherein a molding material, which is prepared by previously molding the silicon-cotaining starting material into a predetermined shape, and a powdery carbon starting material are heated to a predetermined reaction temperature under a hydrogen gas atmosphere. Silicon carbide whiskers which are linear with no bendings, long fiber length, high aspect ratio and low silicon dioxide impurity can be obtained at a high yield of greater than 90% based on silicon vaporized from the silicon-containing starting material.

Abstract: Whisker crystalline silicon carbide is prepared by heating a silicon-containing material for example, elemental silicon, silicon oxides, silicon hydroxides, silicon salts and the like with a halogen and carbon-containing material, such as a mixture of hydrocarbon and chlorine-containing material selected from chlorine, hydrogen chloride, tetrachloromethane and phosgene and halogenated hydrocarbon at a temperature of 800.degree.C or higher under a substantial oxygen and nitrogen gas-free condition.