Patents by Inventor Hideyuki Akimoto

Hideyuki Akimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10553758
    Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: February 4, 2020
    Assignee: ALPAD Corporation
    Inventors: Hideyuki Tomizawa, Akihiro Kojima, Miyoko Shimada, Yosuke Akimoto, Hideto Furuyama, Yoshiaki Sugizaki
  • Patent number: 10418491
    Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: September 17, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masayuki Sakakura, Ryosuke Watanabe, Junichiro Sakata, Kengo Akimoto, Akiharu Miyanaga, Takuya Hirohashi, Hideyuki Kishida
  • Patent number: 10403763
    Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: September 3, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Junichiro Sakata, Takuya Hirohashi, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga
  • Publication number: 20190187998
    Abstract: An information processing device includes a processor that calculates a first energy consumption of a first computer during a boot latency when the first computer has already booted and is not executing any job. The boot latency is time taken for boot of a second computer scheduled to execute a second job with the first computer after a first job executed by the first computer. The processor calculates a second energy consumption of the second computer during a waiting time when the second computer has already booted and is not executing any job. The waiting time is obtained by subtracting the boot latency from a time difference between a scheduled end time of the first job and a present time. The processor powers on the second computer when power of the second computer is off and when the second energy consumption becomes equal to or less than a threshold value.
    Type: Application
    Filed: December 3, 2018
    Publication date: June 20, 2019
    Applicant: FUJITSU LIMITED
    Inventor: Hideyuki AKIMOTO
  • Patent number: 10091280
    Abstract: A data transfer control apparatus controls transfer of data from a plurality of first nodes included in a first region in a network to a plurality of second nodes included in a second region in the network. A control unit of the data transfer control apparatus generates an n-dimensional Latin hypercube in which the number of symbols in each dimension is a value in keeping with a size of the first region. The control unit then associates, in accordance with respective positions of the first nodes in the first region, each first node with a symbol at a corresponding position in the Latin hypercube. The control unit then instructs the first nodes so that parallel data transfers by a plurality of first node sets, where first nodes associated with a same symbol in the Latin hypercube are grouped, are executed in order in first node set units.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: October 2, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Hideyuki Akimoto, Tsuyoshi Hashimoto
  • Publication number: 20160255138
    Abstract: A data transfer control apparatus controls transfer of data from a plurality of first nodes included in a first region in a network to a plurality of second nodes included in a second region in the network. A control unit of the data transfer control apparatus generates an n-dimensional Latin hypercube in which the number of symbols in each dimension is a value in keeping with a size of the first region. The control unit then associates, in accordance with respective positions of the first nodes in the first region, each first node with a symbol at a corresponding position in the Latin hypercube. The control unit then instructs the first nodes so that parallel data transfers by a plurality of first node sets, where first nodes associated with a same symbol in the Latin hypercube are grouped, are executed in order in first node set units.
    Type: Application
    Filed: January 27, 2016
    Publication date: September 1, 2016
    Applicant: FUJITSU LIMITED
    Inventors: Hideyuki AKIMOTO, Tsuyoshi HASHIMOTO
  • Publication number: 20140215483
    Abstract: A memory allocation/free replacing unit hooks a call of a memory allocating/freeing unit. The memory allocation/free replacing unit generates information required for totalization of a dynamically used memory amount, writes the generated information to a log file, and calls the memory allocating/freeing unit to perform memory allocation and free. A totalization processing unit loads the log file and totalizes a dynamically used memory amount for each dynamic library, for each function, or for each thread.
    Type: Application
    Filed: December 20, 2013
    Publication date: July 31, 2014
    Applicant: FUJITSU LIMITED
    Inventors: Hideyuki Akimoto, Yuichiro Ajima, Kenichi Miura, Takayuki Okamoto, Tomoya Adachi, Shinji Sumimoto
  • Publication number: 20090141398
    Abstract: A magnetic head has a magnetic main pole and a coil for generating a magnetic flux at the magnetic main pole by energizing the coil. The magnetic main pole is formed as a multi layer structure including at least one magnetic layer and at least one FeRh alloy layer.
    Type: Application
    Filed: December 3, 2008
    Publication date: June 4, 2009
    Applicant: FUJITSU LIMITED
    Inventors: Hideyuki AKIMOTO, Kenji NOMA
  • Publication number: 20080171232
    Abstract: In the magnetic head, a lower shielding layer and an upper shielding layer of a read-head and a lower magnetic pole of a write-head are electrically connected to a substrate so as to prevent damage of an MR element caused by static electricity and so as not to badly influence reading characteristics of a read-head. The magnetic head comprises: a read-head having a lower shielding layer and an upper shielding layer, which are electrically connected to a substrate via a shunt resistance; and a write-head having a lower magnetic pole, which is electrically connected to the substrate via the shunt resistance, wherein the lower shielding layer and the upper shielding layer are electrically connected to the substrate via a conductive layer, and the lower magnetic pole is electrically connected to the substrate via a conductive layer, which is formed as a base layer of the lower magnetic pole.
    Type: Application
    Filed: October 24, 2007
    Publication date: July 17, 2008
    Applicant: Fujitsu Limited
    Inventors: Tomoka Aoki, Junichi Hashimoto, Mitsuru Otagiri, Hideyuki Akimoto
  • Publication number: 20080118778
    Abstract: A magnetoresistive reproducing head includes first and second free magnetic layers. A non-magnetic layer is provided between the first and second free magnetic layers. A bias applying layer having a single region applies a bias magnetic field in a direction perpendicular to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer. An electrode is electrically connected to the first free-magnetic layer, the second free-magnetic layer, and the non-magnetic layer. In response to a magnetic field generated when a current is applied to the first free-magnetic layer, the second free-magnetic layer, and the non-magnetic layer in a direction perpendicular to the medium facing plane, magnetizations of the first free-magnetic and the second free-magnetic layer are tilted in opposite directions from a direction perpendicular to the medium facing plane.
    Type: Application
    Filed: November 5, 2007
    Publication date: May 22, 2008
    Applicant: Fujitsu Limited
    Inventors: Hideyuki Akimoto, Naoki Mukoyama, Jun Masuko
  • Publication number: 20080102316
    Abstract: A magnetic read head has a first free-magnetic layer, a second free-magnetic layer, a non-magnetic layer provided between the first free-magnetic layer and the second free-magnetic layer, and a bias applying layer for applying a bias magnetic field in the vertical direction to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer. Shape anisotropies of magnetization of the first free-magnetic layer and the second free-magnetic layer are inclined in the opposite direction with each other for the medium facing plane within film surfaces of respective free-magnetic layers. The first free-magnetic layer and the second free-magnetic layer are overlapped at the medium facing plane in the vertical direction at the surfaces of respective free-magnetic layer films, and the bias applying layer is located on the opposite plane to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer.
    Type: Application
    Filed: October 26, 2007
    Publication date: May 1, 2008
    Applicant: Fujitsu Limited
    Inventors: Hideyuki Akimoto, Jun Masuko, Naoki Mukouyama
  • Publication number: 20080074808
    Abstract: A magnetoresistive element 11 is formed with inclusion of a free layer 12, a pinned layer 13, an antiferromagnetic layer 14 for pinning the pinned layer 13, an intermediate layer 15 provided between the free layer 12 and the pinned layer 13, and a ferromagnetic layer 16 for applying a longitudinal bias magnetic field to the free layer. After initial magnetization, characteristic evaluation is conducted for the magnetoresistive element 11. Intensity of longitudinal bias field is adjusted by magnetizing again in a direction different from that of the initial magnetization, if required, on the basis of the evaluation result.
    Type: Application
    Filed: February 26, 2007
    Publication date: March 27, 2008
    Inventors: Hideyuki Akimoto, Naoki Mukoyama
  • Publication number: 20080002306
    Abstract: The magnetic head is capable of preventing variation of magnetic fields working to a read-element, stably generating output signals and improving production yield. The magnetic head comprises: a read-head including a read-element; and a shield for magnetic-shielding the read-element, the shield has a hexagonal planar shape, and one side of the shield is flush with an air bearing surface of the magnetic head.
    Type: Application
    Filed: September 7, 2006
    Publication date: January 3, 2008
    Inventors: Mitsuru Otagiri, Hideyuki Akimoto, Masaya Kato, Hiroshi Shirataki
  • Publication number: 20070217086
    Abstract: The magnetic sensor is capable of improving variations of output power and asymmetric diversity of output signals of a magnetoresistance effect element. The magnetic sensor comprises hard films sandwiching the magnetoresistance effect element, and the hard films apply bias magnetic fields to the magnetoresistance effect element. Each of the hard films includes: a wide section, whose thickness in a height-direction is higher than that of the magnetoresistance effect film; and a link section, whose thickness in the height-direction is gradually reduced toward the magnetoresistance effect element, being extended from the wide section to a side face of the magnetoresistance effect element.
    Type: Application
    Filed: July 18, 2006
    Publication date: September 20, 2007
    Inventors: Masato Matsubara, Hideyuki Akimoto
  • Publication number: 20070211379
    Abstract: The perpendicular magnetic head is capable of solving the problem of pole-erasing and performing high density recording by a main magnetic pole. The perpendicular magnetic head comprises a write-head including a main magnetic pole, and the main magnetic pole is a magnetic thin film having magnetic anisotropy, in which a magnetizing direction is parallel to a recording surface of a recording medium.
    Type: Application
    Filed: June 2, 2006
    Publication date: September 13, 2007
    Inventors: Masaya Kato, Hiroshi Shirataki, Hideyuki Akimoto, Koichi Hirose
  • Publication number: 20070211380
    Abstract: The perpendicular magnetic head is capable of solving the problems of side track erasing and pole erasing. The perpendicular magnetic head of the present invention comprises a write-head, which includes a main magnetic pole emitting magnetic fluxes toward a recording medium. An end face of a pole end is formed into a T-shape. A longitudinal pole section of the pole end is made of a low Bs magnetic thin film, whose end face is formed into a rectangle. A transverse pole section of the pole end is made of a high Bs magnetic thin film, whose end face is formed into a rectangle. The low Bs magnetic thin film and the high Bs magnetic thin film are determined by the formula: (area of the end face of the low Bs magnetic thin film)×(saturation magnetic flux density of the low Bs magnetic thin film)>(area of the end face of the high Bs magnetic thin film)×(saturation magnetic flux density of the high Bs magnetic thin film).
    Type: Application
    Filed: July 7, 2006
    Publication date: September 13, 2007
    Inventors: Hideyuki Akimoto, Mitsuru Otagiri, Hiroshi Shirataki
  • Publication number: 20060209469
    Abstract: A magnetoresistance effect reproduction head includes a shield part composed of a lower shield and an upper shield and prevents fluctuations in head output caused by the magnetic domain structure of the magnetic shield layer, and therefore has a more stabilized head output. In a magnetoresistance effect reproduction head including a shield part that magnetically shields a magnetoresistance effect element, the shield part is formed with a polygonal planar form that is asymmetrical in a height direction.
    Type: Application
    Filed: July 15, 2005
    Publication date: September 21, 2006
    Inventor: Hideyuki Akimoto
  • Publication number: 20050135006
    Abstract: A magnetic head increases the magnetic field strength just below a write gap 14 and thereby improves the recording resolution of a medium. To do so, an upper magnetic pole 10 and a lower magnetic pole 12 are disposed facing one another with the write gap 14 in between, with an end surface of the lower magnetic pole 12 being I-shaped and an end surface of the upper magnetic pole being T-shaped due to the upper magnetic pole 10 being formed of a first upper magnetic pole 10a that is disposed facing the lower magnetic pole 12 and is formed in an I shape that is shorter than the lower magnetic pole 12 and a second upper magnetic pole 10b that is joined to the first upper magnetic pole 10a and is formed wider than the first upper magnetic pole 10a.
    Type: Application
    Filed: February 22, 2005
    Publication date: June 23, 2005
    Inventors: Ikuya Tagawa, Hideyuki Akimoto, Tomoko Kutsuzawa, Syuji Nishida
  • Patent number: 6833175
    Abstract: A glass substrate for a magnetic recording medium has a textured surface having numerous grooves extending in the circumferential direction of the glass substrate. The average roughness of the textured surface is 0.4 nm or less. The number of the grooves is 15 or more per micrometer. The average depth of the grooves is 2 nm or less. The grooves are formed by mechanical texturing using a texturing liquid applied between a texturing tape and the surface of a blank glass substrate rotating. The texturing liquid is an aqueous dispersion of fine diamond abrasive grains.
    Type: Grant
    Filed: March 13, 2002
    Date of Patent: December 21, 2004
    Assignee: Fujitsu Limited
    Inventors: Susumu Yoshida, Hideyuki Akimoto, Masaya Suzuki
  • Patent number: 6803117
    Abstract: A magnetic recording medium for high areal recording density that has excellent thermal fluctuation resistance and recording/reproduction characteristics, and a method of producing the same. The magnetic recording medium includes a glass substrate, an NiP layer having an oxide film on its surface provided on the glass substrate, a ground layer provided on the NiP layer, and a nonmagnetic intermediate layer provided on the ground layer. The magnetic recording medium further includes an exchange layer structure composed of a ferromagnetic layer and a nonmagnetic coupling layer provided on the nonmagnetic intermediate layer, and a magnetic recording layer provided on the exchange layer structure. The oxide film on the NiP layer is formed by introducing a small quantity of oxygen into a vacuum chamber of a sputter device. The formation and oxidation of the NiP layer are conducted at a temperature of not less than 140° C.
    Type: Grant
    Filed: June 11, 2002
    Date of Patent: October 12, 2004
    Assignee: Fujitsu Limited
    Inventors: Hideyuki Akimoto, Kenji Sato, Yuki Yoshida, Masaya Suzuki, Akira Kikuchi, Tohru Horie, Naoya Saito, Akiko Honda