Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a mounting surface below the first upper upward-facing surface, inner lateral surfaces including a first inner lateral surface and a second inner lateral surface facing the first inner lateral surface, wherein the first upper upward-facing surface and the mounting surface are formed inward of the inner lateral surfaces, and a first wiring part disposed on the first upper upward-facing surface; a semiconductor laser element including: a light output surface, a first lateral surface extending from the light output surface and facing the first inner lateral surface, and a second lateral surface extending from the light output surface and opposite to the first lateral surface; and a first wire connected to the first wiring part for electrical connection of the semiconductor laser element.

Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.

Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.

Abstract: A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the

Abstract: A semiconductor laser device includes: a housing including: a first upward-facing surface, at least one inner lateral surface, a recess defined by at least the first upward-facing surface and the at least one inner lateral surface, a second upward-facing surface surrounding the first upward-facing surface in a top view and located above the first upward-facing surface, and at least one third upward-facing surface formed outward of the second upward-facing surface in the top view, wherein a height of the at least one third upward-facing surface is different from a height of the second upward-facing surface; at least one first wiring part located in the recess; at least one second wiring part located on the at least one third-upward facing surface and electrically connected to the at least one first wiring part thorough an insulating part of the housing; a semiconductor laser element disposed on the first upward-facing surface of the housing; and a cap fixed to the second upward-facing surface and covering the

Abstract: A semiconductor laser device includes: a housing including: a recess, and a plurality of wiring parts disposed inside the recess; a submount including: a first main surface fixed to a lower upward-facing surface of the recess, and a second main surface opposite to a first main surface, wherein, in a plan view of the semiconductor laser device, the submount is disposed between the first upper upward-facing surface and a second upper upward-facing surface of the recess; a semiconductor laser element; a light reflecting member; a first wire; and a second wire.

Abstract: The present invention aims at providing a bonding material having both preferable dispensing properties and preferable bonding properties, and also providing a bonding method employing the bonding material. Provided are: a bonding material comprising fine silver particles having an average primary particle diameter of smaller than or equal to 130 nm, and a crosslinking-type inter-particle distance keeping agent crosslinking between the fine silver particles and keeping a distance between the fine silver particles; and a bonding method employing the bonding material.

Abstract: A semiconductor laser device includes: a housing including: a recess, and a plurality of wiring parts disposed inside the recess; a submount including: a first main surface fixed to a lower upward-facing surface of the recess, and a second main surface opposite to a first main surface, wherein, in a plan view of the semiconductor laser device, the submount is disposed between the first upper upward-facing surface and a second upper upward-facing surface of the recess; a semiconductor laser element; a light reflecting member; a first wire; and a second wire.

Abstract: There are provided a bonding material capable of bonding an electronic part to a substrate by means of a silver bonding layer which is difficult to form large cracks even if the cooling/heating cycle is repeated, and a bonded product wherein an electronic part is bonded to a substrate by using the same. In a bonded product wherein a semiconductor chip such as an SiC chip (having a bonded surface plated with silver) serving as an electronic part is bonded to a copper substrate via a silver bonding layer containing a sintered body of silver, the silver bonding layer has a shear strength of not less than 60 MPa and has a crystalline diameter of not larger than 78 nm on (111) plane thereof.

Abstract: A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

Abstract: To provide a silver-bismuth powder, which includes: silver; and bismuth, wherein a mass ratio (silver:bismuth) of the silver to the bismuth is 95:5 to 40:60, wherein a cumulative 50% point of particle diameter (D50) of the silver-bismuth powder in a volume-based particle size distribution thereof as measured by a laser diffraction particle size distribution analysis is 0.1 ?m to 10 ?m, and wherein an oxygen content of the silver-bismuth powder is 5.5% by mass or less.

Abstract: There are provided a bonding material, which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate by preventing voids from being generated in a metal bonding layer and/or on the boundary between the metal bonding layer and the Si chip or metal copper substrate even if no pre-burning is carried out when the Si chip is bonded to the metal substrate, and a bonding method using the same. In a bonding material of a metal paste containing metal particles, a solvent and a dispersant, the metal particles containing first metal particles (small particles) having an average primary particle diameter of 1 to 40 nm, second metal particles (medium particles) having an average primary particle diameter of 41 to 110 nm, and third metal particles (large particles) having an average primary particle diameter of 120 nm to 10 ?m, the weight percentages of the first, second and third metal particles being 1.

Abstract: A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

Abstract: A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: A semiconductor laser device includes a base; a heat sink protruding upward from the base and including an upper surface and a lateral surface extending from the base to the upper surface; a plurality of lead electrodes separated from the heat sink; a submount including: a first main surface fixed to the lateral surface of the heat sink, and a second main surface including a first fixing part, an upper second fixing part, and a lower second fixing part; a protective element fixed to the upper second fixing part; and a wire connecting the protective element and one of the plurality of lead electrodes.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: To provide a silver-bismuth powder, which includes: silver; and bismuth, wherein a mass ratio (silver:bismuth) of the silver to the bismuth is 95:5 to 40:60, wherein a cumulative 50% point of particle diameter (D50) of the silver-bismuth powder in a volume-based particle size distribution thereof as measured by a laser diffraction particle size distribution analysis is 0.1 ?m to 10 ?m, and wherein an oxygen content of the silver-bismuth powder is 5.5% by mass or less.

Abstract: To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.

Abstract: To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.