Patents by Inventor Hideyuki Noshiro
Hideyuki Noshiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11328769Abstract: A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.Type: GrantFiled: August 6, 2019Date of Patent: May 10, 2022Assignee: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Publication number: 20200411760Abstract: A variable resistance element includes: a variable resistance layer that is able to occlude and release at least one type of ions, and changes a resistance of the variable resistance layer according to an amount of the at least one type of ions; an ion occluding/releasing layer that is able to occlude and release the at least one type of ions; and an ion conductive layer that conducts the at least one type of ions between the variable resistance layer and the ion occluding/releasing layer, wherein the variable resistance layer and the ion occluding/releasing layer are made of the same constituent elements.Type: ApplicationFiled: September 11, 2020Publication date: December 31, 2020Applicant: FUJITSU LIMITEDInventors: Tomochika KURITA, Hideyuki NOSHIRO, Shintaro SATO
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Publication number: 20200066338Abstract: A resistance change device includes a first resistance change layer that occludes and discharges ions of at least one type, and resistance of the first resistance change layer, changes in accordance with an amount of the ions in such a manner that the resistance decreases when the ions are discharged and the resistance increases when the ions are occluded; a second resistance change layer that occludes and discharges the ions, and resistance of the second resistance change layer changes in accordance with the amount of the ions in such a manner that the resistance increases when the ions are discharged and the resistance decreases when the ions are occluded; and an ion conductive layer that carries the ions and is provided between the first resistance change layer and the second resistance change layer.Type: ApplicationFiled: August 6, 2019Publication date: February 27, 2020Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Patent number: 9218869Abstract: A memory device includes: a memory element which includes three or more resistance states by using plural magneto-resistive elements each having a first resistance state or a second resistance state; and a comparison and determination circuit which compares the resistance states of the memory element before and after one first magneto-resistive element from among the plural magneto-resistive elements in the memory element is rewritten into the first resistance state, and determines the resistance state of the memory element in accordance with the comparison result.Type: GrantFiled: April 23, 2014Date of Patent: December 22, 2015Assignee: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Publication number: 20140340960Abstract: A memory device includes: a memory element which includes three or more resistance states by using plural magneto-resistive elements each having a first resistance state or a second resistance state; and a comparison and determination circuit which compares the resistance states of the memory element before and after one first magneto-resistive element from among the plural magneto-resistive elements in the memory element is rewritten into the first resistance state, and determines the resistance state of the memory element in accordance with the comparison result.Type: ApplicationFiled: April 23, 2014Publication date: November 20, 2014Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Patent number: 8811058Abstract: A resistance change element including a first electrode; a second electrode; and an oxide film, including an oxide of the first electrode, formed at sides of the first electrode and sandwiched between the first electrode and the second electrode in a plurality of regions, wherein at least one of the regions includes a resistance part whose resistance value changes in accordance with a voltage applied to the first and second electrodes.Type: GrantFiled: July 29, 2009Date of Patent: August 19, 2014Assignee: Fujitsu Semiconductor LimitedInventor: Hideyuki Noshiro
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Patent number: 8750034Abstract: A magnetoresistance element includes: a first magnetoresistance subelement including a first free magnetization layer, a first tunnel insulating layer and a first fixed magnetization layer, the first tunnel insulating layer interposed between the first free magnetization layer and the first fixed magnetization layer; and a second magnetoresistance subelement including a second free magnetization layer, a second tunnel insulating layer and a second fixed magnetization layer, the second tunnel insulating layer interposed between the second free magnetization layer and the second fixed magnetization layer, wherein the first and second magnetoresistance subelements are stacked each other, and an order of the first free magnetization layer and the first fixed magnetization layer is opposite to an order of the second free magnetization layer and the second fixed magnetization layer in a thickness direction of the magnetoresistance element.Type: GrantFiled: February 13, 2013Date of Patent: June 10, 2014Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
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Publication number: 20140003137Abstract: A determining device includes: a memory element that includes laminated magnetoresistive elements; reference elements, each having a different resistance value; a select circuit that selects a reference element from the reference elements; an apply circuit that applies a higher read voltage selected from different read voltages to the reference element selected by the select circuit and the memory element, as the resistance value of the reference element selected from the reference elements is higher; a compare circuit that compares an amount of electric current flowing through the selected reference element to which the read voltage is applied by the apply circuit and an amount of electric current flowing through the memory element to which the read voltage is applied by the apply circuit; and a determination circuit that determines data stored in the memory element, based on a result of comparison by the compare circuit.Type: ApplicationFiled: April 25, 2013Publication date: January 2, 2014Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Patent number: 8533938Abstract: In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.Type: GrantFiled: June 18, 2009Date of Patent: September 17, 2013Assignee: Fujitsu LimitedInventors: Hideyuki Noshiro, Kentaro Kinoshita
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Patent number: 8482953Abstract: A composite resistance variable element includes a first resistance variable element in which a resistance value varies corresponding to a direction of inner magnetization, and a second resistance variable element connected in series to the first resistance variable element. A resistance value of the second resistance variable element varies corresponding to a magnitude of at least one of a voltage applied to the second resistance variable element and a current flowing through the second resistance variable element, irrespective of whether the voltage and the current are positive or negative.Type: GrantFiled: July 29, 2011Date of Patent: July 9, 2013Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
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Patent number: 8350244Abstract: A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes.Type: GrantFiled: May 24, 2010Date of Patent: January 8, 2013Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
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Patent number: 8227782Abstract: In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a lower electrode (ground-side electrode) of the resistance change element is formed of a transition metal such as Ni, and an upper electrode (positive polarity-side electrode) is configured of a noble metal such as Pt. In addition, a transition metal oxide film between the lower electrode and the upper electrode is formed of an oxide film (NiOx film) of a transition metal that is of the same kind as the transition metal constituting the lower electrode, for example.Type: GrantFiled: June 18, 2009Date of Patent: July 24, 2012Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
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Patent number: 8106377Abstract: In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition metal such as Ni, a transition metal oxide film made of a transition metal oxide such as NiOx, and a lower electrode made of a noble metal such as Pt.Type: GrantFiled: June 18, 2009Date of Patent: January 31, 2012Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
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Patent number: 8102003Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.Type: GrantFiled: May 28, 2009Date of Patent: January 24, 2012Assignee: Fujitsu LimitedInventors: Chikako Yoshida, Hideyuki Noshiro, Takashi Iiduka
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Publication number: 20110280064Abstract: A composite resistance variable element includes a first resistance variable element in which a resistance value varies corresponding to a direction of inner magnetization, and a second resistance variable element connected in series to the first resistance variable element. A resistance value of the second resistance variable element varies corresponding to a magnitude of at least one of a voltage applied to the second resistance variable element and a current flowing through the second resistance variable element, irrespective of whether the voltage and the current are positive or negative.Type: ApplicationFiled: July 29, 2011Publication date: November 17, 2011Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Publication number: 20100252796Abstract: In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition metal such as Ni, a transition metal oxide film made of a transition metal oxide such as NiOx, and a lower electrode made of a noble metal such as Pt.Type: ApplicationFiled: June 18, 2009Publication date: October 7, 2010Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Publication number: 20100230655Abstract: A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes.Type: ApplicationFiled: May 24, 2010Publication date: September 16, 2010Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
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Publication number: 20100083487Abstract: In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.Type: ApplicationFiled: June 18, 2009Publication date: April 8, 2010Applicant: FUJITSU LIMITEDInventors: Hideyuki Noshiro, Kentaro Kinoshita
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Publication number: 20100027319Abstract: A resistance change element including a first electrode; a second electrode; and an oxide film, including an oxide of the first electrode, formed at sides of the first electrode and sandwiched between the first electrode and the second electrode in a plurality of regions, wherein at least one of the regions includes a resistance part whose resistance value changes in accordance with a voltage applied to the first and second electrodes.Type: ApplicationFiled: July 29, 2009Publication date: February 4, 2010Applicant: FUJITSU MICROELECTRONICS LIMITEDInventor: Hideyuki NOSHIRO
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Publication number: 20090257271Abstract: In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a lower electrode (ground-side electrode) of the resistance change element is formed of a transition metal such as Ni, and an upper electrode (positive polarity-side electrode) is configured of a noble metal such as Pt. In addition, a transition metal oxide film between the lower electrode and the upper electrode is formed of an oxide film (NiOx film) of a transition metal that is of the same kind as the transition metal constituting the lower electrode, for example.Type: ApplicationFiled: June 18, 2009Publication date: October 15, 2009Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro