Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the first insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode throu

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the first insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode throu

Abstract: A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.

Abstract: There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm?3 or more to 1×1022 cm?3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm?3 or less.

Abstract: In an external cavity laser, which comprises an FBG section having the Bragg wavelength of light reflected by a grating adjusted to a given wavelength and a laser light emitting device designed to generate light, optically coupled to the FBG section to ensure input and output of the light, and including a high-reflection surface for reflecting the generated light, the light is resonated by a cavity formed between the high-reflection surface and the grating, whereby a laser beam having a given oscillation wavelength is oscillated through a connector. The FBG section is located on an optical path between the laser light emitting device and the connector, and an isolator is located on an optical path between the FBG section and the connector. The isolator serves to absorb and intercept reflected waves or reflected return light from the connector.

Abstract: The optical output of an optical device branched by means of an optical coupler is partially fetched by means of a wavelength stabilizer that includes an FBG section, whereby the passing wavelength characteristic of a fiber grating, which is believed originally to depend little on temperature, can be prevented from further changing. The wavelength of the optical device is tuned by means of a light wavelength tuning device that includes the wavelength stabilizer. Thus, the tuned wavelength is less liable to suffer an error that is attributable to the change of environmental temperature, so that the temperature dependence of the wavelength tuning operation is lowered.

Abstract: There is provided an optical transmitting device with which signal light can be blocked only in the optical path having a displaced or removed optical connector without affecting the remaining optical paths.

Abstract: There is provided an optical transmission system that can identify any transmitting stations generating optical beats found within the transmission band being used for optical signals so that any degradation in the quality of the signals being transmitted and adversely affected by the optical beats may be eliminated. The light sources of the transmitting stations giving rise to the optical beats generated in the detector as a result of the differences of the wavelengths of the optical signals coming from the light sources of the transmitting stations and adversely affecting the transmission band being used for the electric signals originating the modulated optical signals are identified by changing the state of polarization of light of the optical signals coming from the light sources of the plurality of transmitting stations.

Abstract: There is provided a phototransmission method that can effectively avoid any deterioration by beats in the optical signal quality of a phototransmission system and transmit signals to a single receiving station with a substantially equal light intensity level even if only a narrow gap is provided for any two close wavelengths that are used for signal transmission and if the wavelength of the laser beam emitted from each semiconductor laser diode of the system is allowed to fluctuate only within a narrow limit so that the system may accommodate a large number of different light waves (transmitting stations). The light intensity level of optical signals produced at the optical output terminal of each semiconductor laser diode 3 is regulated by setting the bias current of the semiconductor laser diode 3 to a value between one and a half times and five times the threshold current of the semiconductor laser diode.