Abstract: A shape measurement device includes: a displacement detector configured to detect displacement of a contact; a relative movement mechanism configured to relatively move the displacement detector with respect to the measurement object, and allow the contact to trace a surface to be measured of the measurement object; a position detecting sensor configured to detect a relative position of the displacement detector with respect to the measurement object; a camera configured to image the contact, and output a captured image of the contact; and a synchronization controller configured to repetitively execute three actions in synchronization together while the relative movement is being performed by the relative movement mechanism, the actions including detection of the relative position by the position detecting sensor, detection of the displacement by the displacement detector, and imaging by the camera.

Abstract: There are provided a surface shape measuring method and a surface shape measuring device which can measure the diameter of a workpiece to be measured with high precision and high reproducibility and have excellent versatility. These method include: acquiring first shape data indicating a surface shape of the workpiece with a detector being disposed on one side across a workpiece while rotating the workpiece relatively to the detector around a rotational center; acquiring second shape data indicating the surface shape of the workpiece with the detector being disposed on the other side across the workpiece while rotating the workpiece relatively to the detector around the rotational center; and calculating a shape parameter defining the surface shape of the workpiece by collating the first shape data and second shape data. In calculating the shape parameter, a deviation of the detector from the reference line is calculated based on the collation result.

Abstract: There are provided a surface shape measuring method and a surface shape measuring device which can measure the diameter of a workpiece to be measured with high precision and high reproducibility and have excellent versatility. These method include: acquiring first shape data indicating a surface shape of the workpiece with a detector being disposed on one side across a workpiece while rotating the workpiece relatively to the detector around a rotational center; acquiring second shape data indicating the surface shape of the workpiece with the detector being disposed on the other side across the workpiece while rotating the workpiece relatively to the detector around the rotational center; and calculating a shape parameter defining the surface shape of the workpiece by collating the first shape data and second shape data. In calculating the shape parameter, a deviation of the detector from the reference line is calculated based on the collation result.

Abstract: A probe assembly for inspecting power semiconductor devices, which includes a probe block having more than one probe holding hole, more than one probe, each of which is contained in one of the probe holding holes with its outer surface being in contact with the inner surface of the probe holding hole, and which has lower end protruding from the probe block and coming into contact with the power semiconductor device on inspection, and one or more cooling units which cool the probe block. According to the probe assembly and the inspection apparatus, it is possible to inspect characteristics of power semiconductor devices accurately by suppressing temperature rises of the probes as well as the power semiconductor device under test.

Abstract: An inspection apparatus is provided, which includes probes for front side electrodes, probes for back side electrodes, and a chuck stage. The probes for front side electrodes and the probes for back side electrodes are formed on the upper surface of the chuck stage, and the probe contact area electrically continues to the wafer holding area, and the probes for front side electrodes and the probes for back side electrodes are located leaving a distance in horizontal direction between them so that the probes for back side electrodes move relatively within the probe contact area when the probes for front side electrodes are moved relatively within the wafer under test by the movement of the chuck stage.

Abstract: A wafer prober is provided with a tray which supports a wafer at a set position, transports it to a processing position of the wafer and is placed at the processing position; one or more alignment units which position the wafer at the set position with respect to the tray; contact units arranged in number larger than that of the alignment units and performing inspection processing in contact with the wafer at the processing position; and a tray transport portion for transporting the tray supporting the wafer between the alignment unit and the contact unit. The tray is provided with three or more pin holes for allowing movement of the chuck pin in the XYZ? directions, an alignment mark for positioning the wafer, and an alignment portion for positioning the tray itself.

Abstract: A wafer prober is provided with a tray which supports a wafer at a set position, transports it to a processing position of the wafer and is placed at the processing position; one or more alignment units which position the wafer at the set position with respect to the tray; contact units arranged in number larger than that of the alignment units and performing inspection processing in contact with the wafer at the processing position; and a tray transport portion for transporting the tray supporting the wafer between the alignment unit and the contact unit. The tray is provided with three or more pin holes for allowing movement of the chuck pin in the XYZ? directions, an alignment mark for positioning the wafer, and an alignment portion for positioning the tray itself.