Abstract: An operation panel is integrated into a conveying unit, and the operation panel and a conveying roller are displaced with respect to each other in a sheet width direction crossing a sheet conveying direction. The operation panel and the conveying roller are located in a manner at least partly overlapping each other in the sheet conveying direction and a height direction in the conveying unit. Further, the operation panel and the conveying roller are at least partly located within a range of a width of a sheet conveying area by the conveying unit.

Abstract: A ?? modulator converts an input analog quantity into a digital value quantized with a predetermined number of bits and outputs the digital value. The ?? modulator includes an integrator that includes a capacitor and integrates a difference between the input analog quantity and an analog quantity acquired from D/A conversion of the output digital value by a D/A converter; a quantizer that quantizes an analog quantity acquired from integration by the integrator; and a digital integrator that carries out an integration operation on data acquired from quantization by the quantizer.

Abstract: A part of bent end sections of a slot is configured to overlap with a waveguide inner wall when seen from the normal direction of a narrow wall surface of a waveguide at which the slot is provided. Thus, the conductance of a single slot can be reduced by adjusting the joined amount of a tip section of the slot and the inner wall of the waveguide. As a result, even in the case where the number of slots provided per waveguide is increased while a waveguide width is restricted to be short with respect to a slot length, impedance matching with a waveguide bonding section can be taken.

Abstract: Disclosed is a method of processing a workpiece so as to form an opening that extends from an oxide region to a base layer through a portion between the raised regions. The method includes: (1) a step of forming an opening in the oxide region to expose a second section between the raised regions; and (2) a step of etching a residue made of silicon oxide and existing within the opening and a second section. In the second step, a denatured region is formed by exposing the workpiece to plasma of a mixed gas including a hydrogen-containing gas and NF3 gas to denature the residue and the second section, and the denatured region is removed.

Abstract: A sheet cutting apparatus includes a cutting unit configured to cut a sheet, a discharge unit configured to discharge a fragment of the sheet cut by the cutting unit, a blowing unit configured to blow air on the fragment discharged from the discharge unit, and a storage unit configured to store the fragment discharged from the discharge unit.

Abstract: An etching method of selectively etching a first region formed of silicon oxide with respect to a second region formed of silicon nitride includes: a process (a) and a process (b). In the process (a), a target object is exposed to plasma of a fluorocarbon gas and a thickness of a protective film on the second region is larger than a thickness of a protective film formed on the first region. In the process (b), the first region is etched by plasma of a fluorocarbon gas. In the process (a), a temperature of the target object is set to 60° C. or more to 250° C. or less.

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract: A part of bent end sections of a slot is configured to overlap with a waveguide inner wall when seen from the normal direction of a narrow wall surface of a waveguide at which the slot is provided. Thus, the conductance of a single slot can be reduced by adjusting the joined amount of a tip section of the slot and the inner wall of the waveguide. As a result, even in the case where the number of slots provided per waveguide is increased while a waveguide width is restricted to be short with respect to a slot length, impedance matching with a waveguide bonding section can be taken.

Abstract: The present invention addresses the problem of providing an agent for lifestyle-related diseases, an oral composition, and a high-fat food product that can be conveniently, safely, and continuously consumed on a daily basis. This problem is solved by an agent for lifestyle-related diseases that contains a specific branched ?-glucan having the characteristics described in the present invention, an oral composition comprising the agent, and a high-fat food product comprising the same.

Abstract: Disclosed is a method of processing a workpiece so as to form an opening that extends from an oxide region to a base layer through a portion between the raised regions. The method includes: (1) a step of forming an opening in the oxide region to expose a second section between the raised regions; and (2) a step of etching a residue made of silicon oxide and existing within the opening and a second section. In the second step, a denatured region is formed by exposing the workpiece to plasma of a mixed gas including a hydrogen-containing gas and NF3 gas to denature the residue and the second section, and the denatured region is removed.

Abstract: Disclosed is an etching method for selectively etching an oxidation layer made of silicon from a processing target object having the oxidation layer within a processing chamber of a plasma processing apparatus. The etching method includes: forming an altered layer by generating plasma of a gas containing hydrogen, nitrogen, and fluorine to alter the oxidation layer; and after the forming the altered layer, irradiating secondary electrons to the processing target object to remove the altered layer within the processing chamber, in which a negative direct current voltage is applied on an upper electrode of the plasma processing apparatus so that positive ions generated from plasma collide against the upper electrode and thus the secondary electrons are emitted from the upper electrode.

Abstract: The present invention has objects to provide a thermostable cellobiose 2-epimerase, its preparation and uses. The present invention attains the above objects by providing a thermostable cellobiose 2-epimerase, a DNA encoding the enzyme, a recombinant DNA and transformant comprising the DNA, a process for producing the enzyme, and a process for producing isomerized saccharides using the enzyme.

Abstract: The present invention has objects to provide a glucan useful as water-soluble dietary fiber, its preparation and uses. The present invention solves the above objects by providing a branched ?-glucan, which is constructed by glucose molecules and characterized by methylation analysis as follows: (1) Ratio of 2,3,6-trimethyl-1,4,5-triacetyl-glucitol to 2,3,4-trimethyl-1,5,6-triacetyl-glucitol is in the range of 1:0.6 to 1:4; (2) Total content of 2,3,6-trimethyl-1,4,5-triacetyl-glucitol and 2,3,4-trimethyl-1,5,6-triacetyl-glucitol is 60% or higher in the partially methylated glucitol acetates; (3) Content of 2,4,6-trimethyl-1,3,5-triacetyl-glucitol is 0.5% or higher but less than 10% in the partially methylated glucitol acetates; and (4) Content of 2,4-dimethyl-1,3,5,6-tetraacetyl-glucitol is 0.5% or higher in the partially methylated glucitol acetates; a novel ?-glucosyltransferase which forms the branched ?-glucan, processes for producing them, and their uses.

Abstract: The present invention relates to a delta-sigma-modulator and a delta-sigma-A/D converter. By speeding up the settling time constant of an integrator at the last stage with a simple configuration, the sampling frequency is sped up in the delta-sigma-modulator as a whole. Specifically, in the delta-sigma-modulator including multiple integrators connected in cascade, the integrator positioned at the last stage is a passive integrator not using an amplifier circuit, and one or more integrators positioned at stages preceding the last stage by one or more stages are active SC integrators using amplifier circuits and switched capacitor circuits, respectively. Also, each of the integrators performs integral calculation by alternately repeating a first operation phase to charge a sampling capacitor by sampling an input signal, and a second operation phase to perform a summing integration by transferring an electric charge charged in the sampling capacitor to an integration capacitor.

Abstract: An image reading device includes: a sensor unit; a first reading part at which the sensor unit reads a document through a first transparent member; a second reading part at which the sensor unit reads a document through a second transparent member different from the first transparent member; and a color reference, wherein measurement of the color reference is able to be performed through the first transparent member by the sensor unit for calibration for reading at the first reading part, and measurement of the color reference is able to be performed through the second transparent member by the sensor unit for calibration for reading at the second reading part.

Abstract: An etching method of selectively etching a first region formed of silicon oxide with respect to a second region formed of silicon nitride includes: a process (a) and a process (b). In the process (a), a target object is exposed to plasma of a fluorocarbon gas and a thickness of a protective film on the second region is larger than a thickness of a protective film formed on the first region. In the process (b), the first region is etched by plasma of a fluorocarbon gas. In the process (a), a temperature of the target object is set to 60° C. or more to 250° C. or less.

Abstract: The present invention has objects to provide a glucan useful as water-soluble dietary fiber, its preparation and uses. The present invention solves the above objects by providing a branched ?-glucan, which is constructed by glucose molecules and characterized by methylation analysis as follows: (1) Ratio of 2,3,6-trimethyl-1,4,5-triacetyl-glucitol to 2,3,4-trimethyl-1,5,6-triacetyl-glucitol is in the range of 1:0.6 to 1:4; (2) Total content of 2,3,6-trimethyl-1,4,5-triacetyl-glucitol and 2,3,4-trimethyl-1,5,6-triacetyl-glucitolis 60% or higher in the partially methylated glucitol acetates; (3) Content of 2,4,6-trimethyl-1,3,5-triacetyl-glucitol is 0.5% or higher but less than 10% in the partially methylated glucitol acetates; and (4) Content of 2,4-dimethyl-1,3,5,6-tetraacetyl-glucitol is 0.5% or higher in the partially methylated glucitol acetates; a novel ?-glucosyltransferase which forms the branched ?-glucan, processes for producing them, and their uses.

Abstract: Provided is an etching method for forming a space with an aspect ratio of 50 or more in a workpiece including a silicon oxide film and a hard mask. The etching method includes: a first step of exposing the workpiece to plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode; and a second step of further exposing the workpiece to the plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode. A distance between the placing table and the upper electrode in the first step is at least 5/3 times of a distance between the placing table and the upper electrode in the first step.

Abstract: The present invention relates to a delta-sigma-modulator and a delta-sigma-A/D converter. By speeding up the settling time constant of an integrator at the last stage with a simple configuration, the sampling frequency is sped up in the delta-sigma-modulator as a whole. Specifically, in the delta-sigma-modulator including multiple integrators connected in cascade, the integrator positioned at the last stage is a passive integrator not using an amplifier circuit, and one or more integrators positioned at stages preceding the last stage by one or more stages are active SC integrators using amplifier circuits and switched capacitor circuits, respectively. Also, each of the integrators performs integral calculation by alternately repeating a first operation phase to charge a sampling capacitor by sampling an input signal, and a second operation phase to perform a summing integration by transferring an electric charge charged in the sampling capacitor to an integration capacitor.

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.