Patents by Inventor Hiroaki IWAOKA

Hiroaki IWAOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240210814
    Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
    Type: Application
    Filed: March 6, 2024
    Publication date: June 27, 2024
    Applicant: AGC INC.
    Inventors: Hirotomo KAWAHARA, Daijiro AKAGI, Hiroaki IWAOKA, Toshiyuki UNO, Michinori SUEHARA, Keishi TSUKIYAMA
  • Patent number: 12001134
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains it as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2?range of 35° to 45° to an average value of an intensity of the diffracted light in a 28 range of 55° to 60° measured using an XRD method with a CuK? ray, upon being irradiated with the EUV light with an incident angle of ?, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
    Type: Grant
    Filed: November 22, 2023
    Date of Patent: June 4, 2024
    Assignee: AGC Inc.
    Inventors: Yuya Nagata, Daijiro Akagi, Kenichi Sasaki, Hiroaki Iwaoka
  • Publication number: 20240168370
    Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625 MP1+MP2?1000??(1).
    Type: Application
    Filed: October 20, 2023
    Publication date: May 23, 2024
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Hiroaki IWAOKA, Daijiro AKAGI, Ichiro ISHIKAWA
  • Publication number: 20240160096
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.
    Type: Application
    Filed: January 24, 2024
    Publication date: May 16, 2024
    Applicant: AGC Inc.
    Inventors: Yuya NAGATA, Daijiro AKAGI, Kenichi SASAKI, Hiroaki IWAOKA
  • Publication number: 20240152044
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hiroaki IWAOKA, Shunya TAKI, Kenichi SASAKI, Ichiro ISHIKAWA, Toshiyuki UNO
  • Patent number: 11953822
    Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
    Type: Grant
    Filed: May 18, 2023
    Date of Patent: April 9, 2024
    Assignee: AGC INC.
    Inventors: Hirotomo Kawahara, Daijiro Akagi, Hiroaki Iwaoka, Toshiyuki Uno, Michinori Suehara, Keishi Tsukiyama
  • Publication number: 20240094622
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains Ir as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2? range of 35° to 45° to an average value of an intensity of the diffracted light in a 2? range of 55° to 60° measured using an XRD method with a CuK? ray, upon being irradiated with the EUV light with an incident angle of ?, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 21, 2024
    Applicant: AGC Inc.
    Inventors: YUYA NAGATA, Daijiro Akagi, Kenichi Sasaki, Hiroaki Iwaoka
  • Patent number: 11829065
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625MP1+MP2?1000.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: November 28, 2023
    Assignee: AGC Inc.
    Inventors: Shunya Taki, Hiroaki Iwaoka, Daijiro Akagi, Ichiro Ishikawa
  • Publication number: 20230324785
    Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
    Type: Application
    Filed: May 18, 2023
    Publication date: October 12, 2023
    Applicant: AGC INC.
    Inventors: Hirotomo KAWAHARA, Daijiro AKAGI, Hiroaki IWAOKA, Toshiyuki UNO, Michinori SUEHARA, Keishi TSUKIYAMA
  • Publication number: 20230251564
    Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of 0.625 MP1+MP2?1000.
    Type: Application
    Filed: March 31, 2023
    Publication date: August 10, 2023
    Applicant: AGC Inc.
    Inventors: Shunya TAKI, Hiroaki IWAOKA, Daijiro AKAGI, Ichiro ISHIKAWA
  • Patent number: 10287676
    Abstract: The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: May 14, 2019
    Assignee: AGC Inc.
    Inventors: Hiroaki Iwaoka, Atsushi Seki, Kousuke Chonan, Reo Usui, Toshio Suzuki, Tomomi Abe
  • Publication number: 20160258055
    Abstract: The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)).
    Type: Application
    Filed: May 18, 2016
    Publication date: September 8, 2016
    Applicant: Asahi Glass Company, Limited
    Inventors: Hiroaki IWAOKA, Atsushi SEKI, Kousuke CHONAN, Reo USUI, Toshio SUZUKI, Tomomi ABE
  • Publication number: 20090242887
    Abstract: A display substrate is disclosed comprising: a supporting substrate; an organic resin layer formed on the supporting substrate; and a transparent electrode formed on the organic resin layer, wherein the transparent electrode includes: a first layer containing a zinc oxide and formed in close contact with the organic resin layer; and a second layer containing a zinc oxide and which has a thickness thicker than a thickness of the first layer and is formed on the first layer, wherein the first layer is deposited by either one of a DC sputtering and a DC magnetron sputtering, and the second layer is deposited by any one of a radio frequency sputtering, a radio frequency magnetron sputtering, a radio frequency superimposing a DC sputtering, and a radio frequency superimposing a DC magnetron sputtering, and the display substrate is available, for example, as the substrate having a transparent electrode for counter electrode of liquid crystal display device.
    Type: Application
    Filed: March 27, 2009
    Publication date: October 1, 2009
    Applicants: CASIO COMPUTER CO., LTD., Kochi University of Technology
    Inventors: Tetsuya YAMAMOTO, Naoki YAMAMOTO, Hisao MAKINO, Akira UJIHARA, Yoshinori HIRASHIMA, Hiroaki IWAOKA, Hisashi AOKI, Hitoshi HOKARI, Motohiko YOSHIDA