Patents by Inventor Hiroaki Kawano

Hiroaki Kawano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190088776
    Abstract: According to one embodiment, a semiconductor device comprising a drain layer, a base region, a source region, a field plate electrode, and a gate region. The drift layer is formed on the drain layer. The base region is formed on the drift layer. The source region is formed on the base region. The field plate electrode is formed inside a trench reaching the drift layer through the base region from the source region. The gate region is formed inside the trench, wherein the gate region has a U-shape including a recess on the gate region in a direction along the trench and is formed such that, on upper surfaces of respective both ends of the U-shape, a position of an inner end on a side of the recess is higher than a position of an outer end on a side of the second insulating film.
    Type: Application
    Filed: March 9, 2018
    Publication date: March 21, 2019
    Inventors: Saya Shimomura, Toshifumi Nishiguchi, Hiroaki Katou, Kenya Kobayashi, Takahiro Kawano, Tetsuya Ohno
  • Publication number: 20180201094
    Abstract: A heat pump cycle includes a first usage side heat exchanger that heats a target fluid via heat exchange with refrigerant discharged from a compressor. The refrigerant flowing out of the first usage side heat exchanger is reduced in pressure by a first pressure reducing unit, and then separated into gas and liquid by a gas-liquid separation unit. The separated gas-phase refrigerant flows toward an intermediate-pressure port of the compressor. The separated liquid-phase refrigerant is reduced in pressure by a second pressure reducing unit. An additional heat exchanger performs heat exchange between the refrigerant flowing from the second pressure reducing unit and a heat medium, and allows the refrigerant to flow toward an intake port of the compressor. A second usage side heat exchanger performs heat exchange between the separated liquid-phase refrigerant and a counterpart fluid, and allows the refrigerant to flow toward the second pressure reducing unit.
    Type: Application
    Filed: June 29, 2016
    Publication date: July 19, 2018
    Inventors: Hiroaki KAWANO, Satoshi ITOH
  • Publication number: 20180149396
    Abstract: A refrigeration cycle device includes a charged-amount determination unit that executes a charged-amount determination to determine whether the refrigeration cycle device is in a refrigerant shortage state or not, a compressor control unit that controls a compressor, and a decompression control unit that controls a throttle opening degree of a decompression device. The charged-amount determination unit determines that the refrigeration cycle device is in the refrigerant shortage state when a heat dissipation capacity of a radiator shows a tendency to decrease in a case where the decompression control unit decreases a throttle opening degree of the decompression device while the compressor control unit operates the compressor.
    Type: Application
    Filed: April 26, 2016
    Publication date: May 31, 2018
    Inventors: Hiroaki KAWANO, Takuya TANIHATA
  • Publication number: 20180022185
    Abstract: A heat pump cycle includes a compressor, a first interior heat exchanger, a separator that separates a refrigerant discharged from the compressor into a gas-phase refrigerant which does not include a lubricant and a remaining refrigerant, an exterior heat exchanger that performs heat exchange between the remaining refrigerant flowing out of the separator and an outside air, a second interior heat exchanger, a control valve, an accumulator, and a first bypass passage that bypasses the second interior heat exchanger and connects to an inlet side of the accumulator. The heat pump cycle heats an air flow in the first interior heat exchanger and controls the control valve to reduce the pressure of the refrigerant, in a state where the refrigerant circulates in a refrigerant circuit including the first bypass passage while accumulating the gas-phase refrigerant flowing out of the separator in the second interior heat exchanger.
    Type: Application
    Filed: February 4, 2016
    Publication date: January 25, 2018
    Applicant: DENSO CORPORATION
    Inventor: Hiroaki KAWANO
  • Patent number: 9601993
    Abstract: A boosting circuit of charge pump type includes: charging portion for applying an input voltage to a first capacitor; double boosting portion for applying the input voltage to a second capacitor and applying a sum of the input voltage and a voltage across the first capacitor to an output capacitor in a first predetermined period after start of a boosting operation; and triple boosting portion for repeating in order, after end of the first predetermined period, a step of applying the sum of the input voltage and the voltage across the first capacitor to the second capacitor and a step of applying a sum of the voltage across the first capacitor and a voltage across the second capacitor to the output capacitor.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: March 21, 2017
    Assignee: LAPIS SEMICONDUCTOR CO., LTD.
    Inventor: Hiroaki Kawano
  • Publication number: 20170050493
    Abstract: A heater core for performing heat exchange between a coolant and ventilation air to be blown to the interior of a vehicle so as to heat the ventilation air is disposed in a water circulation circuit for circulating a coolant in an engine EG for outputting driving force necessary to move the vehicle. When the temperature of the coolant discharged from the engine EG is low, a heat transport refrigeration cycle device, serving as a heat transport unit for absorbing heat from a downstream coolant at a position downstream more than the heater core and dissipating the heat absorbed from the downstream coolant to an upstream coolant at a position upstream more than the heater core, is operated to increase the temperature of the coolant introduced into the heater core until the temperature of the coolant reaches the temperature necessary to heat the interior of the vehicle, without operation of the engine EG.
    Type: Application
    Filed: April 27, 2015
    Publication date: February 23, 2017
    Inventors: Michio Nishikawa, Atsushi Inaba, Hiroaki Kawano, Naoya Makimoto
  • Patent number: 9425302
    Abstract: A semiconductor device includes a source electrode portion and a drain electrode formed on a semiconductor stacked body so as to be at an interval from each other, and a gate electrode formed between the source electrode portion and the drain electrode at an interval from the source electrode portion and the drain electrode. The source electrode portion includes a first recess electrode being directly in contact with a two-dimensional electron gas layer formed in the first nitride semiconductor layer, and a surface electrode formed between the gate electrode and the first recess electrode and connected conductively to the two-dimensional electron gas layer. A source potential is applied to the surface electrode and the recess electrode, and a width of the surface electrode in a gate-source direction is 0.4 times or more a distance between a gate-side end of the surface electrode and a source-side end of the gate electrode.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: August 23, 2016
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Wataru Kanaga, Hiroaki Kawano, Shingo Matsuda, Katsuhiko Kawashima
  • Patent number: 9378890
    Abstract: When a voltage two times a rated voltage is applied between a first external electrode and a second external electrode of a ceramic capacitor, the electric field intensity generated at portion connected between a first internal electrode and an end of a portion of a second external electrode at a side of a first side surface by a shortest distance FS is about 0.34 kV/mm or less.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 28, 2016
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hiroaki Kawano, Toshimi Oguni
  • Publication number: 20160133739
    Abstract: A semiconductor device includes a source electrode portion and a drain electrode formed on a semiconductor stacked body so as to be at an interval from each other, and a gate electrode formed between the source electrode portion and the drain electrode at an interval from the source electrode portion and the drain electrode. The source electrode portion includes a first recess electrode being directly in contact with a two-dimensional electron gas layer formed in the first nitride semiconductor layer, and a surface electrode formed between the gate electrode and the first recess electrode and connected conductively to the two-dimensional electron gas layer. A source potential is applied to the surface electrode and the recess electrode, and a width of the surface electrode in a gate-source direction is 0.4 times or more a distance between a gate-side end of the surface electrode and a source-side end of the gate electrode.
    Type: Application
    Filed: January 20, 2016
    Publication date: May 12, 2016
    Inventors: WATARU KANAGA, HIROAKI KAWANO, SHINGO MATSUDA, KATSUHIKO KAWASHIMA
  • Publication number: 20150070083
    Abstract: A boosting circuit of charge pump type includes: charging portion for applying an input voltage to a first capacitor; double boosting portion for applying the input voltage to a second capacitor and applying a sum of the input voltage and a voltage across the first capacitor to an output capacitor in a first predetermined period after start of a boosting operation; and triple boosting portion for repeating in order, after end of the first predetermined period, a step of applying the sum of the input voltage and the voltage across the first capacitor to the second capacitor and a step of applying a sum of the voltage across the first capacitor and a voltage across the second capacitor to the output capacitor.
    Type: Application
    Filed: November 17, 2014
    Publication date: March 12, 2015
    Applicant: LAPIS SEMICONDUCTOR CO., LTD.
    Inventor: Hiroaki KAWANO
  • Patent number: 8890605
    Abstract: A boosting circuit includes an input terminal to which a power voltage is applied, a first capacitor connected to the input terminal, second and third capacitors, a first circuit including a first switch through which one end of the first capacitor is connected to one end of the second capacitor, and a second switch through which another end of the first capacitor is connected to another end of the second capacitor, a second circuit including a third switch through which the one end of the first capacitor is connected to the other end of the second capacitor, and a fourth switch through which the one end of the second capacitor is connected to one end of the third capacitor, the other end of the first capacitor being connected to another end of the third capacitor, and a fifth switch through which the one end of the first capacitor is connected to the one end of the third capacitor.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: November 18, 2014
    Assignee: LAPIS Semiconductor Co., Ltd.
    Inventor: Hiroaki Kawano
  • Patent number: 8692619
    Abstract: Provided is a compact high frequency power amplifier having a high degree of freedom of design with respect to a gain fluctuation immediately after start-up of an amplifier. The high frequency power amplifier includes a speed-up circuit that transiently increases a reference voltage during rise of a control voltage to increase an amount of bias supplied to an amplification transistor from a bias circuit. The speed-up circuit includes a capacitor and an overshoot control circuit. The overshoot control circuit determines an increasing amount of the reference voltage when the reference voltage is transiently increased according to a charge amount charged in the capacitor, and the overshoot control circuit also determines a time constant in charging and discharging the capacitor.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: April 8, 2014
    Assignee: Panasonic Corporation
    Inventors: Kazuya Wakita, Haruhiko Koizumi, Shingo Enomoto, Hiroaki Kawano
  • Publication number: 20130293311
    Abstract: Provided is a compact high frequency power amplifier having a high degree of freedom of design with respect to a gain fluctuation immediately after start-up of an amplifier. The high frequency power amplifier includes a speed-up circuit that transiently increases a reference voltage during rise of a control voltage to increase an amount of bias supplied to an amplification transistor from a bias circuit. The speed-up circuit includes a capacitor and an overshoot control circuit. The overshoot control circuit determines an increasing amount of the reference voltage when the reference voltage is transiently increased according to a charge amount charged in the capacitor, and the overshoot control circuit also determines a time constant in charging and discharging the capacitor.
    Type: Application
    Filed: July 9, 2013
    Publication date: November 7, 2013
    Inventors: KAZUYA WAKITA, HARUHIKO KOIZUMI, SHINGO ENOMOTO, HIROAKI KAWANO
  • Publication number: 20130242462
    Abstract: When a voltage two times a rated voltage is applied between a first external electrode and a second external electrode of a ceramic capacitor, the electric field intensity generated at portion connected between a first internal electrode and an end of a portion of a second external electrode at a side of a first side surface by a shortest distance FS is about 0.34 kV/mm or less.
    Type: Application
    Filed: March 7, 2013
    Publication date: September 19, 2013
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Hiroaki KAWANO, Toshimi OGUNI
  • Patent number: 8373498
    Abstract: A boosting circuit of charge pump type includes: charging portion for applying an input voltage to a first capacitor; double boosting portion for applying the input voltage to a second capacitor and applying a sum of the input voltage and a voltage across the first capacitor to an output capacitor in a first predetermined period after start of a boosting operation; and triple boosting portion for repeating in order, after end of the first predetermined period, a step of applying the sum of the input voltage and the voltage across the first capacitor to the second capacitor and a step of applying a sum of the voltage across the first capacitor and a voltage across the second capacitor to the output capacitor.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: February 12, 2013
    Assignee: Lapis Semiconductor Co., Ltd.
    Inventor: Hiroaki Kawano
  • Publication number: 20120112832
    Abstract: The present invention provides a radio frequency switch and a radio frequency module having excellent distortion characteristics without causing a further insertion loss and a greater chip size. The radio frequency switch includes: input-output terminals which are for inputting and outputting a radio frequency signal; a basic switching unit provided between two of the input-output terminals; and a control terminal which receives a control voltage for controlling conduction and interruption of the basic switching unit. The basic switching unit includes field effect transistors (FETs) connected in multiple stages, each of the FETs being a meandered FET having a meandered gate electrode, and among the FETs, one of the FETs has a finger length shorter than finger lengths of rest of the FETs, the one of the FETs electrically located closest to one of the input-output terminals.
    Type: Application
    Filed: November 8, 2011
    Publication date: May 10, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Hiroaki KAWANO, Haruhiko KOIZUMI, Kazuya WAKITA
  • Publication number: 20110318426
    Abstract: An antibacterial agent of the present invention contains a metal-containing compound containing a metal other than aluminum, and a phosphorus-adsorbing material. A method of using an antibacterial agent of the present invention is a method for improving an antibacterial property of a metal-containing compound containing a metal other than aluminum, wherein the metal-containing compound and a phosphorus-adsorbing compound are used in combination. Thus, the present invention provides an antibacterial agent, and a method of using an antibacterial agent, wherein an antibacterial property of a metal-containing compound containing a metal other than aluminum, particularly a silver-containing compound, is improved significantly.
    Type: Application
    Filed: September 10, 2009
    Publication date: December 29, 2011
    Applicants: OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE, KANEKA CORPORATION
    Inventors: Kenji Yamashita, Takashi Omoto, Kunihiko Moriyoshi, Hiroaki Kawano
  • Publication number: 20110294444
    Abstract: A small switching device capable of implementing low-distortion characteristics formed on a semiconductor substrate to switch radio frequency signal paths is provided. An FET which is an example of switching device formed on a semiconductor substrate 109 includes two source/drain electrodes each of which is comb-shaped, at least two gate electrodes meandering between the two source/drain electrodes, and a conductive layer interposed between adjacent gate electrodes along the adjacent gate electrodes, in which a layer immediately underneath straight-line portions of the gate electrode is electrically separated from a layer immediately underneath angled portions of the gate electrode, each of the straight-line portions being in parallel with each of teeth of said two source/drain electrodes, and each of the angled portions connecting a pair of adjacent straight-line portions.
    Type: Application
    Filed: May 23, 2011
    Publication date: December 1, 2011
    Applicant: PANASONIC CORPORATION
    Inventor: Hiroaki KAWANO
  • Patent number: 8049559
    Abstract: A semiconductor device and a radio frequency circuit which are appropriate for multiband, multimode performance can be realized as a semiconductor device including a field-effect transistor formed on a semiconductor substrate, and include: ohmic electrodes serving as source and drain electrodes of the field-effect transistor, first and second Schottky electrodes provided between the ohmic electrodes and serving as gate electrodes of the field-effect transistor, and a third Schottky electrode provided and grounded between the first and second Schottky electrodes.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: November 1, 2011
    Assignee: Panasonic Corporation
    Inventors: Junji Kaido, Masahiko Inamori, Shinichi Sonetaka, Hiroaki Kawano
  • Publication number: 20110254616
    Abstract: A boosting circuit of charge pump type includes: charging portion for applying an input voltage to a first capacitor; double boosting portion for applying the input voltage to a second capacitor and applying a sum of the input voltage and a voltage across the first capacitor to an output capacitor in a first predetermined period after start of a boosting operation; and triple boosting portion for repeating in order, after end of the first predetermined period, a step of applying the sum of the input voltage and the voltage across the first capacitor to the second capacitor and a step of applying a sum of the voltage across the first capacitor and a voltage across the second capacitor to the output capacitor.
    Type: Application
    Filed: March 18, 2011
    Publication date: October 20, 2011
    Applicant: OKI SEMICONDUCTOR CO., LTD.
    Inventor: Hiroaki Kawano