Patents by Inventor Hiroaki Shishido

Hiroaki Shishido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200150524
    Abstract: A mask blank is provided which comprises a transparent substrate, an etching mask formed on the transparent substrate, and a light shielding film formed on the etching mask film. The mask blank may also include a light-semitransmissive film formed between the transparent substrate and the etching mask film. The etching mask film contains chromium and carbon, and the light shielding film contains chromium and oxygen. A C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV.
    Type: Application
    Filed: January 14, 2020
    Publication date: May 14, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO, Ryo OHKUBO
  • Patent number: 10606164
    Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness. The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Takenori Kajiwara
  • Publication number: 20200064727
    Abstract: A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.
    Type: Application
    Filed: October 31, 2019
    Publication date: February 27, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO, Kazuya SAKAI
  • Publication number: 20200064725
    Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
    Type: Application
    Filed: January 24, 2018
    Publication date: February 27, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Ryo OHKUBO, Hiroaki SHISHIDO
  • Publication number: 20200064726
    Abstract: Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light. The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen.
    Type: Application
    Filed: June 20, 2016
    Publication date: February 27, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO
  • Patent number: 10571797
    Abstract: A mask blank is provided, which makes it possible to form a fine transfer pattern in a light-semitransmissive film with high accuracy even if the light-semitransmissive film is made of a material containing silicon and a light shielding film is made of a material containing chromium. The mask blank 100 has a structure in which the light-semitransmissive film 2, etching mask film 3, and light shielding film 4 are laminated in this order on the transparent substrate 1. It is featured in that the light-semitransmissive film 2 is made of the material containing silicon, the etching mask film 3 is made of the material containing chromium, the light shielding film 4 is made of a material containing chromium and oxygen, and a ratio of the etching rate of the light shielding film 4 to the etching rate of the etching mask film 3 in the dry etching with an oxygen-containing chlorine-based gas is not less than 3 and not more than 12.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: February 25, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Ryo Ohkubo
  • Patent number: 10551734
    Abstract: A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: February 4, 2020
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Takenori Kajiwara
  • Publication number: 20200033718
    Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.
    Type: Application
    Filed: October 8, 2019
    Publication date: January 30, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Takenori KAJIWARA, Hiroaki SHISHIDO
  • Patent number: 10539866
    Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: January 21, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Kazuya Sakai
  • Patent number: 10527931
    Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: January 7, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido, Yasushi Okubo
  • Patent number: 10495966
    Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: December 3, 2019
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Kazuya Sakai
  • Patent number: 10481486
    Abstract: A mask blank with a phase shift film and a light shielding film, laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance (?) 2%???30% and generates a phase difference (??) of 150°????200°, and is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below the transparent substrate while n for layer U is higher, and the layer L has an extinction coefficient k higher than layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than layer U, and has an extinction coefficient k higher than layer U.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Takenori Kajiwara, Hiroaki Shishido
  • Publication number: 20190317394
    Abstract: This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom % or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom %, and has a thickness that is not less than twice the thickness of the high nitride layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: October 17, 2019
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki SHISHIDO, Yasutaka HORIGOME
  • Patent number: 10444620
    Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask. A mask blank has a structure in which a phase-shift film, an etching stopper film, a light-shielding film, and a hard mask film are laminated in said order on a transparent substrate, and at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, and satisfies the conditions of Formula (1) below: CN?9.0×10?6×RM4?1.65×10?4×RM3?7.718×10?2×RM2+3.611×RM?21.084 ??Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: October 15, 2019
    Assignee: HOYA CORPORATION
    Inventors: Atsushi Matsumoto, Hiroaki Shishido, Takashi Uchida
  • Publication number: 20190302604
    Abstract: A mask blank for a phase shift mask having a phase shift film on a transparent substrate. The phase shift film generates a phase difference of 150 degrees or more and 200 degrees or less and transmits exposure light of an ArF excimer laser at a transmittance of 10% or more. The film has a low transmitting layer and a high transmitting layer, stacked alternately to form a total of six or more layers from a side of the transparent substrate. The low transmitting layer is made of a material containing silicon and nitrogen and having a nitrogen content of 50 atom % or more. The high transmitting layer is made of a material containing silicon and oxygen and having an oxygen content of 50 atom % or more. The low transmitting layer has a thickness greater than that of the high transmitting layer, which has a thickness of 4 nm or less.
    Type: Application
    Filed: September 4, 2017
    Publication date: October 3, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yasutaka HORIGOME, Kazutake TANIGUCHI, Hiroaki SHISHIDO
  • Patent number: 10365556
    Abstract: Provided is a mask blank including a phase shift film on a transparent substrate. This phase shift film includes a phase shift layer at least containing a transition metal and silicon, and a silicon layer, which is configured to attenuate exposure light with which the phase shift layer is irradiated, and the silicon layer is formed to be in contact with the substrate side of the phase shift layer. This mask blank is used in manufacturing a phase shift mask to which laser exposure light having a wavelength of 200 nm or less is applied.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: July 30, 2019
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa
  • Patent number: 10365555
    Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: July 30, 2019
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Ryo Ohkubo
  • Publication number: 20190204728
    Abstract: A mask blank including a light shielding film pattern having high ArF light fastness. The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.
    Type: Application
    Filed: August 2, 2017
    Publication date: July 4, 2019
    Applicant: HOYA CORPORATION
    Inventor: Hiroaki SHISHIDO
  • Publication number: 20190187550
    Abstract: A mask blank, which is capable of being formed with high transfer accuracy when a hard mask film pattern is used as a mask, and even when the mask blank includes a chromium-based light shielding film. A light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate. The light-semitransmissive film contains silicon, and the hard mask film contains any one or both of silicon and tantalum. The light shielding film has a laminate structure of a lower layer and an upper layer, and contains chromium. The upper layer has a content of chromium of 65 at % or more, and a content of oxygen of less than 20 at %, and the lower layer has a content of chromium of less than 60 at %, and a content of oxygen of 20 at % or more.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa
  • Publication number: 20190163047
    Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: May 30, 2019
    Applicant: HOYA CORPORATION
    Inventors: Takenori KAJIWARA, Ryo OHKUBO, Hiroaki SHISHIDO, Osamu NOZAWA