Patents by Inventor Hiroaki Shishido

Hiroaki Shishido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210373432
    Abstract: A mask blank including a light shielding film pattern having high ArF light fastness. The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.
    Type: Application
    Filed: August 9, 2021
    Publication date: December 2, 2021
    Applicant: HOYA CORPORATION
    Inventor: Hiroaki SHISHIDO
  • Publication number: 20210364910
    Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.
    Type: Application
    Filed: August 2, 2021
    Publication date: November 25, 2021
    Applicant: HOYA CORPORATION
    Inventors: Ryo OHKUBO, Hiroaki SHISHIDO, Takashi UCHIDA
  • Publication number: 20210286254
    Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.
    Type: Application
    Filed: May 27, 2021
    Publication date: September 16, 2021
    Applicant: HOYA CORPORATION
    Inventors: Masahiro HASHIMOTO, Hiroaki SHISHIDO
  • Patent number: 11119400
    Abstract: In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: September 14, 2021
    Assignee: HOYA CORPORATION
    Inventors: Ryo Ohkubo, Hiroaki Shishido, Takashi Uchida
  • Patent number: 11119399
    Abstract: According to the present invention, provided is a mask blank (10), in which: a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A). CN?9.0×10?6×RM4?1.65×10?4×RM3?7.718×10?2×RM2+3.611×RM?21.084?? Expression (1) 0.04×AS?0.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: September 14, 2021
    Assignee: HOYA CORPORATION
    Inventors: Atsushi Matsumoto, Hiroaki Shishido, Takashi Uchida
  • Patent number: 11112690
    Abstract: A mask blank including a light shielding film pattern having high ArF light fastness. The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: September 7, 2021
    Assignee: HOYA CORPORATION
    Inventor: Hiroaki Shishido
  • Publication number: 20210208497
    Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.
    Type: Application
    Filed: May 8, 2019
    Publication date: July 8, 2021
    Applicant: HOYA CORPORATION
    Inventors: Hitoshi MAEDA, Hiroaki SHISHIDO, Masahiro HASHIMOTO
  • Patent number: 11054735
    Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: July 6, 2021
    Assignee: HOYA CORPORATION
    Inventors: Takenori Kajiwara, Ryo Ohkubo, Hiroaki Shishido, Osamu Nozawa
  • Patent number: 11048160
    Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: June 29, 2021
    Assignee: HOYA CORPORATION
    Inventors: Masahiro Hashimoto, Hiroaki Shishido
  • Publication number: 20210149293
    Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.
    Type: Application
    Filed: May 16, 2018
    Publication date: May 20, 2021
    Applicant: HOYA CORPORATION
    Inventors: Masahiro HASHIMOTO, Hiroaki SHISHIDO
  • Publication number: 20210149294
    Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film.
    Type: Application
    Filed: December 21, 2020
    Publication date: May 20, 2021
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Ryo OHKUBO, Hiroaki SHISHIDO
  • Publication number: 20210141305
    Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n?0.0733×k2+0.4069×k+1.0083??Formula (1) n?29.316×k2?92.292×k+72.
    Type: Application
    Filed: February 28, 2018
    Publication date: May 13, 2021
    Applicant: HOYA CORPORATION
    Inventors: Kazutake TANIGUCHI, Hiroaki SHISHIDO
  • Publication number: 20210132488
    Abstract: Provided is a mask blank including a phase shift film The phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order from a side of the transparent substrate. Refractive indexes n1, n2, and n3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relations n1>n2 and n2<n3. Extinction coefficients k1, k2, and k3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of the exposure light satisfy the relations k1<k2 and k2>k3. Film thicknesses d1, d2, and d3 of the first layer, the second layer, and the third layer, respectively, satisfy the relations d1<d3 and d2<d3.
    Type: Application
    Filed: May 8, 2019
    Publication date: May 6, 2021
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki SHISHIDO, Hitoshi MAEDA, Masahiro HASHIMOTO
  • Publication number: 20210109436
    Abstract: In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.
    Type: Application
    Filed: April 2, 2018
    Publication date: April 15, 2021
    Applicant: HOYA CORPORATION
    Inventors: Ryo OHKUBO, Hiroaki SHISHIDO, Takashi UCHIDA
  • Patent number: 10942441
    Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: March 9, 2021
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Takenori Kajiwara, Hiroaki Shishido
  • Patent number: 10942442
    Abstract: A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: March 9, 2021
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Kazuya Sakai
  • Patent number: 10935881
    Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: March 2, 2021
    Assignee: HOYA CORPORATION
    Inventors: Takenori Kajiwara, Hiroaki Shishido, Osamu Nozawa
  • Publication number: 20210048740
    Abstract: Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of a set of specified conditions.
    Type: Application
    Filed: February 20, 2019
    Publication date: February 18, 2021
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki SHISHIDO, Kazutake TANIGUCHI
  • Patent number: 10915016
    Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: February 9, 2021
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido
  • Publication number: 20200379338
    Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]<4/7), and Si—Si bonds present is 0.05 or less. A ratio of a number of SiaNb bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds present is 0.1 or more.
    Type: Application
    Filed: October 31, 2018
    Publication date: December 3, 2020
    Applicants: HOYA CORPORATION, HOYA ELECTRONICS SINGAPORE PTE. LTD.
    Inventors: Hiroaki SHISHIDO, Masahiro HASHIMOTO, Takashi UCHIDA, Mariko UCHIDA