Patents by Inventor Hiroaki Yoda

Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190066749
    Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.
    Type: Application
    Filed: October 31, 2018
    Publication date: February 28, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki YODA, Naoharu SHIMOMURA, Yoshiaki SAITO, Yuichi OHSAWA, Keiko ABE
  • Patent number: 10211394
    Abstract: A magnetic memory according to an embodiment includes: a first and second terminals; a conductive layer, which is nonmagnetic, the conductive layer including a first to third regions, the second region being disposed between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a magnetoresistive element disposed to correspond to the second region of the conductive layer, the magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer and electrically connected to the second region, a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, and a third terminal electrically connected to the first magnetic layer; and a third magnetic layer, the conductive layer being disposed between the third and second magnetic layers.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: February 19, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomoaki Inokuchi, Katsuhiko Koui, Naoharu Shimomura, Yuuzo Kamiguchi, Satoshi Shirotori, Yuichi Ohsawa, Hiroaki Yoda
  • Publication number: 20190051818
    Abstract: According to one embodiment, a magnetic memory element includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first magnetic layer is separated from the conductive layer. The second magnetic layer includes iron, platinum, and boron and is provided between the conductive layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The conductive layer includes a first region and a second region. The second region includes a first metal and boron and is provided between the first region and the second magnetic layer. The first region does not include boron, or a first concentration of boron in the first region is lower than a second concentration of boron in the second region.
    Type: Application
    Filed: February 15, 2018
    Publication date: February 14, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Soichi OIKAWA, Yushi Kato, Mizue Ishikawa, Yoshiaki Saito, Hiroaki Yoda
  • Publication number: 20190051820
    Abstract: A magnetic memory according to an embodiment includes: a first conductive layer including a first to third regions arranged along a first direction, the second region being disposed between the first region and the third region; a second conductive layer including a fourth to sixth regions arranged along the first direction, the fifth region being disposed between the fourth and sixth regions; a third conductive layer electrically connected to the third and fourth regions; a first magnetoresistance device disposed to correspond to the second region, including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second magnetoresistance device to correspond to the fifth region, including a third magnetic layer, a fourth magnetic layer, and a second nonmagnetic layer, a direction from the first region to the third region differing from a direction from the fourth region to the sixth region.
    Type: Application
    Filed: March 7, 2018
    Publication date: February 14, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hideyuki Sugiyama, Yuichi Ohsawa, Satoshi Shirotori, Mariko Shimizu, Altansargai Buyandalai, Hiroaki Yoda
  • Patent number: 10193057
    Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: January 29, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masatoshi Yoshikawa, Hiroaki Yoda, Shuichi Tsubata, Kenji Noma, Tatsuya Kishi, Satoshi Seto, Kazuhiro Tomioka
  • Publication number: 20190006580
    Abstract: A method of manufacturing a magnetic memory device includes forming a stacked structure including a magnetic element, forming a metal film which covers the stacked structure, and forming a protective insulating film formed of a metallic oxide by oxidizing the metal film. A metal element contained in the metallic oxide is selected from yttrium (Y), aluminum (Al), magnesium (Mg), calcium (Ca), zirconium (Zr) and hafnium (Hf).
    Type: Application
    Filed: September 9, 2018
    Publication date: January 3, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masatoshi YOSHIKAWA, Hiroaki YODA, Shuichi TSUBATA, Kenji NOMA, Tatsuya KISHI, Satoshi SETO, Kazuhiro TOMIOKA
  • Patent number: 10170694
    Abstract: A magnetic memory of an embodiment includes: a first conductive layer, which is nonmagnetic and includes at least a first element, the first conductive layer including a first to fifth regions; a first magnetoresistive element disposed corresponding to the third region and including a first magnetic layer, a second magnetic layer including at least a second element, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, a second nonmagnetic layer disposed between the second magnetic layer and the first nonmagnetic layer and including at least a third element, and a third magnetic layer disposed between the second nonmagnetic layer and the first nonmagnetic layer; a second conductive layer disposed corresponding to the second region and including at least the first to third elements; and a third conductive layer disposed corresponding to the fourth region, and including at least the first to third elements.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: January 1, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura, Katsuhiko Koui, Tomoaki Inokuchi, Hiroaki Yoda
  • Publication number: 20180375016
    Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.
    Type: Application
    Filed: August 31, 2018
    Publication date: December 27, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai
  • Publication number: 20180366639
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
    Type: Application
    Filed: February 26, 2018
    Publication date: December 20, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
  • Patent number: 10147473
    Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: December 4, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki Yoda, Naoharu Shimomura, Yoshiaki Saito, Yuichi Ohsawa, Keiko Abe
  • Patent number: 10141037
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: November 27, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuichi Ohsawa, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
  • Patent number: 10109334
    Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: October 23, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
  • Publication number: 20180301179
    Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.
    Type: Application
    Filed: June 18, 2018
    Publication date: October 18, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomoaki INOKUCHI, Naoharu SHIMOMURA, Katsuhiko KOUI, Yuuzo KAMIGUCHI, Satoshi SHIROTORI, Kazutaka IKEGAMI, Hiroaki YODA
  • Patent number: 10103199
    Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: October 16, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaomi Daibou, Naoharu Shimomura, Yuuzo Kamiguchi, Hiroaki Yoda, Yuichi Ohsawa, Tomoaki Inokuchi, Satoshi Shirotori
  • Patent number: 10102894
    Abstract: A magnetic memory includes: a first and second terminals; a conductive layer including first to fourth regions, the first and fourth regions being electrically connected to the first and second terminals respectively; a first magnetoresistive element including: a first and second magnetic layers; a first nonmagnetic layer between the first and second magnetic layers; and a third terminal electrically connected to the first magnetic layer; a second magnetoresistive element including: a third and fourth magnetic layers; a second nonmagnetic layer between the third and fourth magnetic layers; and a fourth terminal electrically connected to the third magnetic layer; and a circuit configured to apply a write current between the first terminal and the second terminal and apply a first and second potentials to the third and fourth terminals respectively to write the first and second magnetoresistive elements, the first and second potentials being different from each other.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: October 16, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu Shimomura, Tomoaki Inokuchi, Hiroki Noguchi, Katsuhiko Koui, Yuuzo Kamiguchi, Kazutaka Ikegami, Hiroaki Yoda
  • Patent number: 10096770
    Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: October 9, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai
  • Publication number: 20180277746
    Abstract: A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.
    Type: Application
    Filed: September 14, 2017
    Publication date: September 27, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Keiko ABE, Kazutaka IKEGAMI, Shinobu FUJITA, Katsuhiko KOUI, Tomoaki INOKUCHI, Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Hiroaki YODA, Naoharu SHIMOMURA, Yuuzo KAMIGUCHI
  • Publication number: 20180268888
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
    Type: Application
    Filed: September 14, 2017
    Publication date: September 20, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yuichi OHSAWA, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
  • Publication number: 20180268886
    Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.
    Type: Application
    Filed: August 31, 2017
    Publication date: September 20, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mizue ISHIKAWA, Yushi KATO, Yoshiaki SAITO, Soichi OIKAWA, Hiroaki YODA
  • Patent number: 10068946
    Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: September 4, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu Shimomura, Hiroaki Yoda, Tadaomi Daibou, Yuuzo Kamiguchi, Yuichi Ohsawa, Tomoaki Inokuchi, Satoshi Shirotori