Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.

Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.

Abstract: A magnetic memory includes: a first and second terminals; a conductive layer including first to fourth regions, the first and fourth regions being electrically connected to the first and second terminals respectively; a first magnetoresistive element including: a first and second magnetic layers; a first nonmagnetic layer between the first and second magnetic layers; and a third terminal electrically connected to the first magnetic layer; a second magnetoresistive element including: a third and fourth magnetic layers; a second nonmagnetic layer between the third and fourth magnetic layers; and a fourth terminal electrically connected to the third magnetic layer; and a circuit configured to apply a write current between the first terminal and the second terminal and apply a first and second potentials to the third and fourth terminals respectively to write the first and second magnetoresistive elements, the first and second potentials being different from each other.

Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.

Abstract: A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.

Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.

Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.

Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

Abstract: A magnetic memory includes: a first and second terminals; a conductive layer including first to fourth regions, the first and fourth regions being electrically connected to the first and second terminals respectively; a first magnetoresistive element including: a first and second magnetic layers; a first nonmagnetic layer between the first and second magnetic layers; and a third terminal electrically connected to the first magnetic layer; a second magnetoresistive element including: a third and fourth magnetic layers; a second nonmagnetic layer between the third and fourth magnetic layers; and a fourth terminal electrically connected to the third magnetic layer; and a circuit configured to apply a write current between the first terminal and the second terminal and apply a first and second potentials to the third and fourth terminals respectively to write the first and second magnetoresistive elements, the first and second potentials being different from each other.

Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.