Patents by Inventor Hiroaki Yoda

Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9299918
    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: March 29, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaomi Daibou, Minoru Amano, Daisuke Saida, Junichi Ito, Yuichi Ohsawa, Chikayoshi Kamata, Saori Kashiwada, Hiroaki Yoda
  • Patent number: 9293695
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: March 22, 2016
    Inventors: Koji Ueda, Toshihiko Nagase, Kazuya Sawada, Youngmin Eeh, Daisuke Watanabe, Hiroaki Yoda
  • Publication number: 20160032064
    Abstract: An encapsulant sheet for a solar cell contains not less than 91% but less than 99% by mass of an ethylene-unsaturated ester copolymer (A), more than 1% but not more than 9% by mass of an olefin resins (B), 0.001 parts to 5 parts by mass of silicon dioxide and 0.001 to 0.5 parts by mass of a silane coupling agent, where the sum total of the content of the ethylene-unsaturated ester copolymer (A) and the content of the olefin resin (B) is taken as 100% by mass. The content of the silicon dioxide and the content of the silane coupling agent are relative to the total content of the ethylene-unsaturated ester copolymer (A) and the content of the olefin resin (B) being taken as 100% by mass. The encapsulant sheet is excellent in insulating property, storage stability, transparency, and durability of adhesion to glass.
    Type: Application
    Filed: July 29, 2015
    Publication date: February 4, 2016
    Inventor: Hiroaki YODA
  • Publication number: 20160013398
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
    Type: Application
    Filed: September 18, 2015
    Publication date: January 14, 2016
    Inventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
  • Publication number: 20160013400
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
    Type: Application
    Filed: September 21, 2015
    Publication date: January 14, 2016
    Inventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
  • Patent number: 9236563
    Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: January 12, 2016
    Inventors: Yutaka Hashimoto, Tadashi Kai, Masahiko Nakayama, Hiroaki Yoda, Toshihiko Nagase, Masatoshi Yoshikawa, Yasuyuki Sonoda
  • Patent number: 9224944
    Abstract: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: December 29, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeki Takahashi, Yuichi Ohsawa, Junichi Ito, Chikayoshi Kamata, Saori Kashiwada, Minoru Amano, Hiroaki Yoda
  • Patent number: 9219227
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: December 22, 2015
    Assignees: KABUSHIKI KAISHA TOSHIBA, WPI-AIMR, Tohoku University
    Inventors: Tadaomi Daibou, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
  • Publication number: 20150325785
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
    Type: Application
    Filed: July 23, 2015
    Publication date: November 12, 2015
    Inventors: Masahiko NAKAYAMA, Masatoshi YOSHIKAWA, Tadashi KAI, Yutaka HASHIMOTO, Masaru TOKO, Hiroaki YODA, Jae Geun OH, Keum Bum LEE, Choon Kun RYU, Hyung Suk LEE, Sook Joo KIM
  • Patent number: 9184374
    Abstract: According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: November 10, 2015
    Inventors: Kazuya Sawada, Toshihiko Nagase, Youngmin Eeh, Koji Ueda, Daisuke Watanabe, Masahiko Nakayama, Tadashi Kai, Hiroaki Yoda
  • Patent number: 9178133
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: November 3, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
  • Patent number: 9178134
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: November 3, 2015
    Inventors: Masahiko Nakayama, Tadashi Kai, Masaru Toko, Toshihiko Nagase, Hiroaki Yoda
  • Patent number: 9165585
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: October 20, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
  • Publication number: 20150263265
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
    Type: Application
    Filed: September 5, 2014
    Publication date: September 17, 2015
    Inventors: Masatoshi YOSHIKAWA, Hiroaki YODA, Shuichi TSUBATA, Kenji NOMA, Tatsuya KISHI, Satoshi SETO, Kazuhiro TOMIOKA
  • Patent number: 9130143
    Abstract: According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: September 8, 2015
    Inventors: Toshihiko Nagase, Daisuke Watanabe, Kazuya Sawada, Koji Ueda, Youngmin Eeh, Hiroaki Yoda
  • Patent number: 9123879
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: September 1, 2015
    Inventors: Masahiko Nakayama, Masatoshi Yoshikawa, Tadashi Kai, Yutaka Hashimoto, Masaru Toko, Hiroaki Yoda, Jae Geun Oh, Keum Bum Lee, Choon Kun Ryu, Hyung Suk Lee, Sook Joo Kim
  • Patent number: 9087980
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: July 21, 2015
    Assignees: KABUSHIKI KAISHA TOSHIBA, WPI-AIMR, Tohoku University
    Inventors: Tadaomi Daibou, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
  • Patent number: 9082961
    Abstract: According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: July 14, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yuichi Ohsawa, Shigeki Takahashi, Junichi Ito, Daisuke Saida, Kyoichi Suguro, Hiroaki Yoda
  • Patent number: 9018719
    Abstract: According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: April 28, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuya Nishiyama, Hisanori Aikawa, Tadashi Kai, Toshihiko Nagase, Koji Ueda, Hiroaki Yoda
  • Publication number: 20150076635
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.
    Type: Application
    Filed: November 20, 2014
    Publication date: March 19, 2015
    Applicants: KABUSHIKI KAISHA TOSHIBA, WPI-AIMR, Tohoku University
    Inventors: Tadaomi DAIBOU, Junichi ITO, Tadashi KAI, Minoru AMANO, Hiroaki YODA, Terunobu MIYAZAKI, Shigemi MIZUKAMI, Koji ANDO, Kay YAKUSHIJI, Shinji YUASA, Hitoshi KUBOTA, Akio FUKUSHIMA, Taro NAGAHAMA, Takahide KUBOTA