Patents by Inventor Hiroaki Yoda

Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8981507
    Abstract: According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: March 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeki Takahashi, Kyoichi Suguro, Junichi Ito, Yuichi Ohsawa, Hiroaki Yoda
  • Publication number: 20150069553
    Abstract: According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier.
    Type: Application
    Filed: March 7, 2014
    Publication date: March 12, 2015
    Inventors: Toshihiko NAGASE, Daisuke WATANABE, Kazuya SAWADA, Koji UEDA, Youngmin EEH, Hiroaki YODA
  • Publication number: 20150069554
    Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material.
    Type: Application
    Filed: March 7, 2014
    Publication date: March 12, 2015
    Inventors: Masahiko NAKAYAMA, Yasuyuki SONODA, Hiroaki YODA, Makoto NAGAMINE, Masatoshi YOSHIKAWA, Masaru TOKO, Tadashi KAI, Daisuke WATANABE, Youngmin EEH, Koji UEDA, Kazuya SAWADA, Toshihiko NAGASE
  • Publication number: 20150069552
    Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.
    Type: Application
    Filed: March 7, 2014
    Publication date: March 12, 2015
    Inventors: Yutaka HASHIMOTO, Tadashi KAI, Masahiko NAKAYAMA, Hiroaki YODA, Toshihiko NAGASE, Masatoshi YOSHIKAWA, Yasuyuki SONODA
  • Publication number: 20150069548
    Abstract: According to one embodiment, a magnetoresistive element includes a storage layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, a tunnel barrier layer formed between the storage layer and the reference layer, and a heater layer formed on an opposite side to the tunnel barrier layer of the storage layer. The storage layer includes a first layer formed on a side of the heater layer, and a second layer formed on the side of the tunnel barrier layer and having a Curie temperature higher than that of the first layer.
    Type: Application
    Filed: March 7, 2014
    Publication date: March 12, 2015
    Inventors: Masahiko NAKAYAMA, Tadashi KAI, Hiroaki YODA
  • Publication number: 20150069558
    Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.
    Type: Application
    Filed: March 10, 2014
    Publication date: March 12, 2015
    Inventors: Masahiko NAKAYAMA, Tadashi KAI, Masaru TOKO, Hiroaki YODA, Hyung Suk LEE, Jae Geun OH, Choon Kun RYU, Min Suk LEE
  • Publication number: 20150069557
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
    Type: Application
    Filed: March 10, 2014
    Publication date: March 12, 2015
    Inventors: Masahiko NAKAYAMA, Masatoshi YOSHIKAWA, Tadashi KAI, Yutaka HASHIMOTO, Masaru TOKO, Hiroaki YODA, Jae Geun OH, Keum Bum LEE, Choon Kun RYU, Hyung Suk LEE, Sook Joo KIM
  • Publication number: 20150070128
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
    Type: Application
    Filed: January 21, 2014
    Publication date: March 12, 2015
    Inventors: Koji UEDA, Toshihiko NAGASE, Kazuya SAWADA, Youngmin EEH, Daisuke WATANABE, Hiroaki YODA
  • Publication number: 20150061053
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.
    Type: Application
    Filed: March 10, 2014
    Publication date: March 5, 2015
    Inventors: Masahiko NAKAYAMA, Tadashi KAI, Masaru TOKO, Toshihiko NAGASE, Hiroaki YODA
  • Patent number: 8958239
    Abstract: One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: February 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hideyuki Sugiyama, Masahiko Nakayama, Tatsuya Kishi, Hiroaki Yoda, Yoshiaki Saito
  • Publication number: 20150014756
    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
    Type: Application
    Filed: October 1, 2014
    Publication date: January 15, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaomi DAIBOU, Minoru AMANO, Daisuke SAIDA, Junichi ITO, Yuichi OHSAWA, Chikayoshi KAMATA, Saori KASHIWADA, Hiroaki YODA
  • Publication number: 20140360579
    Abstract: The present invention relates to a solar cell encapsulant sheet comprising at least one ethylene-based resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer, 0.001 parts by mass to 5 parts by mass of at least one compound selected from the group consisting of silicon dioxide and zeolite, and 0.001 parts by mass to 5 parts by mass of a silane coupling agent, relative to 100 parts by mass of the ethylene-based resin respectively.
    Type: Application
    Filed: June 2, 2014
    Publication date: December 11, 2014
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Hiroaki YODA, Noboru KONDO
  • Patent number: 8895162
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: November 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, National University Corporation Tohoku University
    Inventors: Katsuya Nishiyama, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Chunlan Feng
  • Patent number: 8884389
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaru Toko, Masahiko Nakayama, Akihiro Nitayama, Tatsuya Kishi, Hisanori Aikawa, Hiroaki Yoda
  • Patent number: 8878321
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hisanori Aikawa, Hiroaki Yoda, Masahiko Nakayama, Tatsuya Kishi, Sumio Ikegawa
  • Patent number: 8879307
    Abstract: A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Naoharu Shimomura, Hiroaki Yoda, Junichi Ito, Minoru Amano, Chikayoshi Kamata, Keiko Abe
  • Patent number: 8878317
    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadaomi Daibou, Minoru Amano, Daisuke Saida, Junichi Ito, Yuichi Ohsawa, Chikayoshi Kamata, Saori Kashiwada, Hiroaki Yoda
  • Publication number: 20140316093
    Abstract: Provided is a polymer from which an encapsulant excellent in weather resistance and processability can be obtained when being used for an encapsulant for a solar cell. The polymer that has a main chain comprising repeating units represented by formula (1) and repeating units represented by formula (2) and satisfies requirements (a1), (a2), and (a3), (a1): the ratio of the number of the repeating units represented by formula (2) to the total number of the carbon atoms that constitute the main chain of the polymer is from 3.8% to 7.5%; (a2): the ratio X represented by formula (3) is from 82% to 100%; X=100×A/B??(3) (a3): the polymer has a melting point of 42° C. to 90° C. as measured with a differential scanning calorimeter.
    Type: Application
    Filed: November 14, 2012
    Publication date: October 23, 2014
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventor: Hiroaki Yoda
  • Publication number: 20140284742
    Abstract: According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
    Type: Application
    Filed: August 9, 2013
    Publication date: September 25, 2014
    Inventors: Kazuya SAWADA, Toshihiko NAGASE, Youngmin EEH, Koji UEDA, Daisuke WATANABE, Masahiko NAKAYAMA, Tadashi KAI, Hiroaki YODA
  • Publication number: 20140284534
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a first magnetic layer having a variable magnetization direction. A first nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer having a fixed magnetization direction is provided on the first nonmagnetic layer. The first magnetic layer, the first nonmagnetic layer and the second magnetic layer are preferredly oriented in a cubical crystal (111) plane.
    Type: Application
    Filed: September 11, 2013
    Publication date: September 25, 2014
    Inventors: Toshihiko NAGASE, Tadashi KAI, Youngmin EEH, Koji UEDA, Daisuke WATANABE, Kazuya SAWADA, Hiroaki YODA