Patents by Inventor Hirofumi Funabashi

Hirofumi Funabashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10727517
    Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: July 28, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hidehito Matsuo, Teruhisa Akashi, Hirofumi Funabashi, Hiroko Iguchi, Shigeo Hori, Toshihiko Tani
  • Patent number: 10727494
    Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: July 28, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Teruhisa Akashi, Hirofumi Funabashi, Hiroko Iguchi, Hidehito Matsuo, Shigeo Hori
  • Patent number: 10637078
    Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: April 28, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi Funabashi, Teruhisa Akashi, Hiroko Iguchi, Hidehito Matsuo, Shigeo Hori
  • Publication number: 20180277855
    Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.
    Type: Application
    Filed: February 23, 2018
    Publication date: September 27, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Teruhisa AKASHI, Hirofumi FUNABASHI, Hiroko IGUCHI, Hidehito MATSUO, Shigeo HORI
  • Publication number: 20180277874
    Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.
    Type: Application
    Filed: December 20, 2017
    Publication date: September 27, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hidehito MATSUO, Teruhisa AKASHI, Hirofumi FUNABASHI, Hiroko IGUCHI, Shigeo HORI, Toshihiko TANI
  • Publication number: 20180261856
    Abstract: A fuel cell system may include a first fuel cell provided on a first substrate; a second fuel cell provided on a second substrate, and having a power generation capacity higher than a power generation capacity of the first fuel cell; a first heater provided at the first fuel cell; a second heater provided at the second fuel cell; and a battery, wherein the first heater heats the first fuel cell by using power supplied from the battery, and wherein the second heater heats the second fuel cell by using power supplied from the first fuel cell.
    Type: Application
    Filed: January 9, 2018
    Publication date: September 13, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Teruhisa AKASHI, Hirofumi FUNABASHI, Hidehito MATSUO
  • Publication number: 20180248205
    Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.
    Type: Application
    Filed: February 8, 2018
    Publication date: August 30, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi FUNABASHI, Teruhisa AKASHI, Hiroko IGUCHI, Hidehito MATSUO, Shigeo HORI
  • Patent number: 9536996
    Abstract: Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: January 3, 2017
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi Funabashi, Takashi Ozaki, Isao Aoyagi, Teruhisa Akashi, Yoshiteru Omura, Keiichi Shimaoka, Yutaka Nonomura, Norio Fujitsuka, Motohiro Fujiyoshi, Yoshiyuki Hata, Kanae Murata, Tetsuo Narita, Kazuyoshi Tomita
  • Patent number: 9478503
    Abstract: An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: October 25, 2016
    Assignees: TOHOKU UNIVERSITY, KABUSHIKI KAISHA TOYOTA CHUO-KENKYUSHO, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Mitsutoshi Makihata, Masayoshi Esashi, Shuji Tanaka, Masanori Muroyama, Hirofumi Funabashi, Yutaka Nonomura, Yoshiyuki Hata, Hitoshi Yamada, Takahiro Nakayama, Ui Yamaguchi
  • Publication number: 20160043066
    Abstract: Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer.
    Type: Application
    Filed: July 29, 2015
    Publication date: February 11, 2016
    Inventors: Hirofumi FUNABASHI, Takashi OZAKI, Isao AOYAGI, Teruhisa AKASHI, Yoshiteru OMURA, Keiichi SHIMAOKA, Yutaka NONOMURA, Norio FUJITSUKA, Motohiro FUJIYOSHI, Yoshiyuki HATA, Kanae MURATA, Tetsuo NARITA, Kazuyoshi TOMITA
  • Publication number: 20150333046
    Abstract: An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.
    Type: Application
    Filed: February 28, 2013
    Publication date: November 19, 2015
    Applicants: TOHOKU UNIVERSITY, TOYOTA JIDOSHA KABUSHIKI KAISHA, KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Mitsutoshi MAKIHATA, Masayoshi ESASHI, Shuji TANAKA, Masanori MUROYAMA, Hirofumi FUNABASHI, Yutaka NONOMURA, Yoshiyuki HATA, Hitoshi YAMADA, Takahiro NAKAYAMA, Ui YAMAGUCHI
  • Patent number: 9134189
    Abstract: A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: September 15, 2015
    Assignees: Toyota Jidosha Kabushiki Kaisha, Kabushiki Kaisha Toyota Chuo Kenkyusho, Tohoku University
    Inventors: Yoshiyuki Hata, Yutaka Nonomura, Motohiro Fujiyoshi, Hirofumi Funabashi, Teruhisa Akashi, Yoshiteru Omura, Takahiro Nakayama, Ui Yamaguchi, Hitoshi Yamada, Shuji Tanaka, Masayoshi Esashi, Masanori Muroyama, Mitsutoshi Makihata
  • Patent number: 8816451
    Abstract: In a MEMS structure, a first trench which penetrates the first layer, the second layer and the third layer is formed, and a second trench which penetrates the fifth layer, the forth layer and the third layer is formed. The first trench forms a first part of an outline of the movable portion in a view along the stacked direction. The second trench forms a second part of the outline of the movable portion in the view along the stacked direction. At least a part of the first trench overlaps with the first extending portion in the view along the stacked direction.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: August 26, 2014
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Hirofumi Funabashi, Yutaka Nonomura, Yoshiyuki Hata, Motohiro Fujiyoshi, Teruhisa Akashi, Yoshiteru Omura
  • Publication number: 20140137670
    Abstract: A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 22, 2014
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOHOKU UNIVERSITY, KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Yoshiyuki Hata, Yutaka Nonomura, Motohiro Fujiyoshi, Hirofumi Funabashi, Teruhisa Akashi, Yoshiteru Omura, Takahiro Nakayama, Ui Yamaguchi, Hitoshi Yamada, Shuji Tanaka, Masayoshi Esashi, Masanori Muroyama, Mitsutoshi Makihata
  • Patent number: 8707784
    Abstract: A structure having a first movable portion displaced perpendicular to a substrate surface and a second movable portion displaced parallel to the substrate surface is realized by a laminated structure employing a nested structure for the first portion and the second portion. The laminated structure is provided with inner and outer movable portions. A y spring is connected to the outer portion, and the outer portion is supported in a y-axis direction by the y spring at a height apart from an outer substrate. A z spring is connected to the inner portion, and the inner portion is supported in a z-axis direction by the z spring at a height apart from the outer substrate. The outer portion and the z spring are at different heights from the substrate, and the z spring overpasses across the outer portion at a height apart from the outer movable portion.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: April 29, 2014
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Teruhisa Akashi, Yutaka Nonomura, Motohiro Fujiyoshi, Hirofumi Funabashi, Yoshiyuki Hata, Yoshiteru Omura
  • Patent number: 8698315
    Abstract: When forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: April 15, 2014
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Yoshiyuki Hata, Yutaka Nonomura, Teruhisa Akashi, Hirofumi Funabashi, Motohiro Fujiyoshi, Yoshiteru Omura
  • Publication number: 20130049212
    Abstract: Technology is provided in which, when forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming, a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.
    Type: Application
    Filed: August 28, 2012
    Publication date: February 28, 2013
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Yoshiyuki HATA, Yutaka NONOMURA, Teruhisa AKASHI, Hirofumi FUNABASHI, Motohiro FUJIYOSHI, Yoshiteru OMURA
  • Patent number: 8365597
    Abstract: An apparatus with a second movable portion that moves along an x-axis direction and a z-axis direction and a first movable portion that only moves along the z-axis direction is disclosed. The apparatus is provided with a fixed portion fixed to a support portion, a plurality of first spring portions connected to the fixed portion, a first movable portion connected to the plurality of first spring portions, a second spring portion connected to the first movable portion, and a second movable portion connected to the second spring portion. A spring constant of each of the plurality of first spring portions in the z-axis direction is lower than spring constants of each of the plurality of first spring portions in the x-axis and a y-axis directions respectively, and a spring constant of the second spring portion in the x-axis direction is lower than spring constants of the second spring portion in the y-axis and the z-axis directions respectively.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: February 5, 2013
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Teruhisa Akashi, Yutaka Nonomura, Motohiro Fujiyoshi, Hirofumi Funabashi
  • Patent number: 8368196
    Abstract: The micro device includes a support substrate, and a movable structure configured to move with respect to the support substrate. At least one of the support substrate and the movable structure is provided with at least one protrusion protruding towards the other of the support substrate and the movable structure. Further, a base portion extending into the one of the support substrate and the movable structure is provided integrally with the at least one protrusion. With this configuration, the protrusion is securely held by the base portion, and the detachment of the protrusion can therefore be prevented even after repeated collisions between the support substrate and the movable structure via the protrusion.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: February 5, 2013
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Teruhisa Akashi, Hirofumi Funabashi, Motohiro Fujiyoshi, Yutaka Nonomura
  • Publication number: 20110232384
    Abstract: A structure having a first movable portion that is displaced perpendicular to a substrate surface and a second movable portion that is displaced parallel to the substrate surface is realized by a laminated structure, and manufacturing cost is reduced by employing a nested structure for the first movable portion and the second movable portion. The laminated structure is provided with a frame-like outer movable portion and an inner movable portion housed within the frame of the outer movable portion. A y spring is connected to the outer movable portion, and the outer movable portion is displaceably supported in a y-axis direction by the y spring at a height apart from an outer substrate. A z spring is connected to the inner movable portion, and the inner movable portion is displaceably supported in a z-axis direction by the z spring at a height apart from the outer substrate.
    Type: Application
    Filed: March 14, 2011
    Publication date: September 29, 2011
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Teruhisa AKASHI, Yutaka NONOMURA, Motohiro FUJIYOSHI, Hirofumi FUNABASHI, Yoshiyuki HATA, Yoshiteru OMURA