Patents by Inventor Hirofumi Hazama
Hirofumi Hazama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240264237Abstract: An evaluation device includes: a first database that contains as data a measurement factor of a first type power storage device; a second database that contains as data a measurement factor of a second type power storage device which is different from the first type; and a conversion model that converts the data by machine learning. The evaluation device converts the data in the first database to the data in the second database using the conversion model, obtains a post-conversion database with data points greater in number than data points of the second database, and performs evaluation related to the second type power storage device using the post-conversion database.Type: ApplicationFiled: May 23, 2022Publication date: August 8, 2024Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi HAZAMA, Hiroki KONDO
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Patent number: 10158060Abstract: A thermoelectric element includes a thermoelectric member made of thermoelectric materials and having a through hole, a pipe inserted into the through hole for making fluid flow, and a soaking member provided to the side of the thermoelectric element. The pipe and the soaking member respectively also function as an electrode of the thermoelectric member. A surface of the soaking member includes a blackened surface and a mirror surface. A thermoelectric generation system includes a container having a lighting window, the thermoelectric element housed in the container, a fluid feeder for feeding fluid into the pipe, and a power consumption source that consumes electric power generated by the thermoelectric element. The thermoelectric element is housed in the container so that the blackened surface is located under the lighting window.Type: GrantFiled: December 19, 2016Date of Patent: December 18, 2018Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi Hazama, Akitoshi Suzumura, Yumi Saiki, Ryoji Asahi, Masato Matsubara
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Publication number: 20170207379Abstract: A thermoelectric element includes a thermoelectric member made of thermoelectric materials and having a through hole, a pipe inserted into the through hole for making fluid flow, and a soaking member provided to the side of the thermoelectric element. The pipe and the soaking member respectively also function as an electrode of the thermoelectric member. A surface of the soaking member includes a blackened surface and a mirror surface. A thermoelectric generation system includes a container having a lighting window, the thermoelectric element housed in the container, a fluid feeder for feeding fluid into the pipe, and a power consumption source that consumes electric power generated by the thermoelectric element. The thermoelectric element is housed in the container so that the blackened surface is located under the lighting window.Type: ApplicationFiled: December 19, 2016Publication date: July 20, 2017Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi HAZAMA, Akitoshi SUZUMURA, Yumi SAIKI, Ryoji ASAHI, Masato MATSUBARA
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Patent number: 8993878Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.Type: GrantFiled: August 7, 2013Date of Patent: March 31, 2015Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Hirofumi Hazama, Ryoji Asahi, Yumi Saiki
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Publication number: 20140060640Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.Type: ApplicationFiled: August 7, 2013Publication date: March 6, 2014Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi HAZAMA, Ryoji ASAHI, Yumi SAIKI
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Publication number: 20130240797Abstract: A compound semiconductor contains main constituent elements all of which satisfy the relationship (Cu1-wAw)2(1+a)(Zn1-xBx)1+b(Sn1-yCy)1+c(Sn1-zSez)4(1+d) and having a CZTSX-based compound as a main phase, where ?0.3?a?0.3, ?0.3 ?b?0.3, ?0.3?c?0.3, ?0.3?d?0.3, 0?w<0.5, 0?x <0.5, 0?y<0.5, 0?z<1.0 and 0<x+y+z+w. The element A is at least one element selected from the group consisting of group Ia elements, group IIa elements, group Ib elements (excluding Cu) and group IIb elements. The element B is at least one element selected from the group consisting of group IIa elements and group Ib elements. The element C is at least one element selected from the group consisting of Zn, group IIIb elements and group IVb elements. A compound in which x=y=z=0 and the element A is Ag, and a compound in which x=y=w=0 are_excluded from the formula.Type: ApplicationFiled: November 29, 2011Publication date: September 19, 2013Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Akihiro Nagoya, Ryoji Asahi, Tatsuo Fukano, Hirofumi Hazama, Yumi Saiki, Toshihisa Shimo, Nobuhiro Goda, Satoshi Nakagawa
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Patent number: 8519255Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1?aAa)1+x(Ni1?bBb)1+y(Sn1?cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.Type: GrantFiled: December 10, 2009Date of Patent: August 27, 2013Assignee: Kabushiki Kaisha Toyota Chuo KenkyushoInventors: Masato Matsubara, Hirofumi Hazama, Ryoji Asahi
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Publication number: 20100147352Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1-aAa)1+x(Ni1-bBb)1+y(Sn1-cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.Type: ApplicationFiled: December 10, 2009Publication date: June 17, 2010Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Masato Matsubara, Hirofumi Hazama, Ryoji Asahi