Patents by Inventor Hirofumi Hazama

Hirofumi Hazama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240264237
    Abstract: An evaluation device includes: a first database that contains as data a measurement factor of a first type power storage device; a second database that contains as data a measurement factor of a second type power storage device which is different from the first type; and a conversion model that converts the data by machine learning. The evaluation device converts the data in the first database to the data in the second database using the conversion model, obtains a post-conversion database with data points greater in number than data points of the second database, and performs evaluation related to the second type power storage device using the post-conversion database.
    Type: Application
    Filed: May 23, 2022
    Publication date: August 8, 2024
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi HAZAMA, Hiroki KONDO
  • Patent number: 10158060
    Abstract: A thermoelectric element includes a thermoelectric member made of thermoelectric materials and having a through hole, a pipe inserted into the through hole for making fluid flow, and a soaking member provided to the side of the thermoelectric element. The pipe and the soaking member respectively also function as an electrode of the thermoelectric member. A surface of the soaking member includes a blackened surface and a mirror surface. A thermoelectric generation system includes a container having a lighting window, the thermoelectric element housed in the container, a fluid feeder for feeding fluid into the pipe, and a power consumption source that consumes electric power generated by the thermoelectric element. The thermoelectric element is housed in the container so that the blackened surface is located under the lighting window.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: December 18, 2018
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi Hazama, Akitoshi Suzumura, Yumi Saiki, Ryoji Asahi, Masato Matsubara
  • Publication number: 20170207379
    Abstract: A thermoelectric element includes a thermoelectric member made of thermoelectric materials and having a through hole, a pipe inserted into the through hole for making fluid flow, and a soaking member provided to the side of the thermoelectric element. The pipe and the soaking member respectively also function as an electrode of the thermoelectric member. A surface of the soaking member includes a blackened surface and a mirror surface. A thermoelectric generation system includes a container having a lighting window, the thermoelectric element housed in the container, a fluid feeder for feeding fluid into the pipe, and a power consumption source that consumes electric power generated by the thermoelectric element. The thermoelectric element is housed in the container so that the blackened surface is located under the lighting window.
    Type: Application
    Filed: December 19, 2016
    Publication date: July 20, 2017
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi HAZAMA, Akitoshi SUZUMURA, Yumi SAIKI, Ryoji ASAHI, Masato MATSUBARA
  • Patent number: 8993878
    Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Hirofumi Hazama, Ryoji Asahi, Yumi Saiki
  • Publication number: 20140060640
    Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.
    Type: Application
    Filed: August 7, 2013
    Publication date: March 6, 2014
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi HAZAMA, Ryoji ASAHI, Yumi SAIKI
  • Publication number: 20130240797
    Abstract: A compound semiconductor contains main constituent elements all of which satisfy the relationship (Cu1-wAw)2(1+a)(Zn1-xBx)1+b(Sn1-yCy)1+c(Sn1-zSez)4(1+d) and having a CZTSX-based compound as a main phase, where ?0.3?a?0.3, ?0.3 ?b?0.3, ?0.3?c?0.3, ?0.3?d?0.3, 0?w<0.5, 0?x <0.5, 0?y<0.5, 0?z<1.0 and 0<x+y+z+w. The element A is at least one element selected from the group consisting of group Ia elements, group IIa elements, group Ib elements (excluding Cu) and group IIb elements. The element B is at least one element selected from the group consisting of group IIa elements and group Ib elements. The element C is at least one element selected from the group consisting of Zn, group IIIb elements and group IVb elements. A compound in which x=y=z=0 and the element A is Ag, and a compound in which x=y=w=0 are_excluded from the formula.
    Type: Application
    Filed: November 29, 2011
    Publication date: September 19, 2013
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Akihiro Nagoya, Ryoji Asahi, Tatsuo Fukano, Hirofumi Hazama, Yumi Saiki, Toshihisa Shimo, Nobuhiro Goda, Satoshi Nakagawa
  • Patent number: 8519255
    Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1?aAa)1+x(Ni1?bBb)1+y(Sn1?cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: August 27, 2013
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Masato Matsubara, Hirofumi Hazama, Ryoji Asahi
  • Publication number: 20100147352
    Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1-aAa)1+x(Ni1-bBb)1+y(Sn1-cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.
    Type: Application
    Filed: December 10, 2009
    Publication date: June 17, 2010
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Masato Matsubara, Hirofumi Hazama, Ryoji Asahi