Abstract: A method of manufacturing a light emitting device includes: a first wafer preparation step including preparing, on a first substrate, m first wafers (where m?2), each of the first wafers comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second wafer preparation step including bonding a second substrate with the second semiconductor layer of a first of the m first wafers and then removing the first substrate from the first wafer, so as to form a second wafer in which the first semiconductor layer is exposed; and a first bonding step including bonding the first semiconductor layer exposed at the surface of the second wafer and the second semiconductor layer of a second of the m first wafers together using a light-transmissive conductive layer, and then removing a first substrate of the second of the m first wafers.

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract: An image processing device includes a luminance modulator operable to receive a video input signal and operable to calculate a video output signal to be supplied to a display panel, a peak value detector operable to calculate a peak value as a maximum luminance in a prescribed region of the video input signal, a histogram detector operable to calculate frequency distribution about a luminance value of the video input signal in the prescribed region, a peak Automatic contrast level (ACL) control gain calculation unit operable to calculate a peak ACL control gain with which luminance of each pixel of the video input signal is amplified, based on the ratio of the peak value to a maximum possible value of the video output signal, and a pattern-adaptive gamma characteristic calculation unit operable to calculate a luminance modulation gain.

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract: A computer includes an image processing apparatus, the image processing apparatus includes a transformation unit that transforms color information on an input image signal on the basis of a transformation rule; a correction range calculation unit that calculates a correction range in a predetermined color space on the basis of a positional relationship between source coordinates and destination coordinates in the color space; and a point-based transfer distance calculation unit that calculates transformation destination coordinates at respective points within the correction range on the basis of the positional relationship between the source coordinates and the destination coordinates, and a positional relationship between coordinates at the respective points within the correction range and the source coordinates to reflect the calculated transformation destination coordinates on the transformation rule.

Abstract: The image processing device includes a luminance modulator, a backlight control gain adjustment unit, a peak value detector, and a histogram detector. The peak value detector calculates a peak value as a maximum luminance value in a prescribed region of the video input signal inputted. The histogram detector calculates frequency distribution about the luminance value of the video input signal. Based on the peak value calculated by the peak value detector and the frequency distribution calculated by the histogram detector, the luminance modulator converts a luminance value of the video input signal into a luminance value of the video output signal and outputs the video output signal, for every pixel. The backlight control gain adjustment unit creates the backlight control signal based on the peak value.

Abstract: An electric heating device includes a control portion adapted to control electric energy supplied to a heater, based on a before-heating temperature, which is a temperature of at least one of an object, the heater and a heat dissipation portion before the heater generates heat, the control portion is adapted to calculate the temperature of the object, based on the before-heating temperature and the electric energy supplied to the heater.

Abstract: A fixing device fixes a toner image formed on a recording medium to the recording medium. The fixing device includes a fixing roller, a pressure roller, and a first heater. The pressure roller is disposed opposite to the fixing roller to form a fixing nip therebetween. The first heater performs non-contact heating on the toner image that has passed through the fixing nip and that has been fixed to the recording medium to melt the toner image. The first heater is disposed adjacent to a conveyance path through which the recording medium that has passed through the fixing nip is conveyed.

Abstract: A light emitting device has a plurality of light emitting elements that are arranged with gaps between the devices on a mounting board in a first direction, a wavelength-conversion member that covers the plurality of light emitting elements, a light reflective resin. Each light emitting element has an n-type semiconductor layer, an active layer provided in a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. In a second direction which is perpendicular to the first direction, an n-side electrodes are provided at least in regions at both ends of the n-type semiconductor layer, and a p-side electrode is provided on the surface of the p-type semiconductor layer, and wherein in the second direction, the wavelength-conversion member is positioned to approximately align both sides with both active layer side faces, or to dispose its sides outward of the active layer side faces.

Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Abstract: A fixing device fixes a toner image formed on a recording medium to the recording medium. The fixing device includes a fixing roller, a pressure roller, and a first heater. The pressure roller is disposed opposite to the fixing roller to form a fixing nip therebetween. The first heater performs non-contact heating on the toner image that has passed through the fixing nip and that has been fixed to the recording medium to melt the toner image. The first heater is disposed adjacent to a conveyance path through which the recording medium that has passed through the fixing nip is conveyed.

Abstract: A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view.

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract: An image processing device includes a display panel operable to provide an input interface for receiving an input of an adjustment value of at least a part of color attributes of each vertex of n axes (n is an integer equal to or greater than 3) serving as adjustment axes in an RGB color space, and an adjustment data generation unit operable to calculate the degree of influence indicative of a following index of each of the n-axis vertices, for each of the n axes, on a basis of a distance between each of the n-axis vertices and a target point which is an arbitrary lattice point in the RGB color space, and operable to calculate adjusted coordinates of the target point in the RGB color space.

Abstract: A light emitting device has a plurality of light emitting elements that are arranged with gaps between the devices on a mounting board in a first direction, a wavelength-conversion member that covers the plurality of light emitting elements, a light reflective resin. Each light emitting element has an n-type semiconductor layer, an active layer provided in a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. In a second direction which is perpendicular to the first direction, an n-side electrodes are provided at least in regions at both ends of the n-type semiconductor layer, and a p-side electrode is provided on the surface of the p-type semiconductor layer, and wherein in the second direction, the wavelength-conversion member is positioned to approximately align both sides with both active layer side faces, or to dispose its sides outward of the active layer side faces.

Abstract: A computer includes an image processing apparatus, the image processing apparatus includes a transformation unit that transforms color information on an input image signal on the basis of a transformation rule; a correction range calculation unit that calculates a correction range in a predetermined color space on the basis of a positional relationship between source coordinates and destination coordinates in the color space; and a point-based transfer distance calculation unit that calculates transformation destination coordinates at respective points within the correction range on the basis of the positional relationship between the source coordinates and the destination coordinates, and a positional relationship between coordinates at the respective points within the correction range and the source coordinates to reflect the calculated transformation destination coordinates on the transformation rule.

Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.

Abstract: The image processing device includes a luminance modulator, a backlight control gain adjustment unit, a peak value detector, and a histogram detector. The peak value detector calculates a peak value as a maximum luminance value in a prescribed region of the video input signal inputted. The histogram detector calculates frequency distribution about the luminance value of the video input signal. Based on the peak value calculated by the peak value detector and the frequency distribution calculated by the histogram detector, the luminance modulator converts a luminance value of the video input signal into a luminance value of the video output signal and outputs the video output signal, for every pixel. The backlight control gain adjustment unit creates the backlight control signal based on the peak value.