Patents by Inventor Hirofumi Kozakai

Hirofumi Kozakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200310244
    Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.
    Type: Application
    Filed: March 25, 2020
    Publication date: October 1, 2020
    Applicant: HOYA CORPORATION
    Inventors: Masanori NAKAGAWA, Hirofumi KOZAKAI
  • Patent number: 10620527
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350(%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: April 14, 2020
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20190384158
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Application
    Filed: February 20, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Publication number: 20190361337
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350(%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Application
    Filed: August 9, 2019
    Publication date: November 28, 2019
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 10429728
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: October 1, 2019
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Patent number: 10347485
    Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: July 9, 2019
    Assignee: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Tatsuo Asakawa, Hirofumi Kozakai
  • Patent number: 10295900
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: May 21, 2019
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20180275507
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Application
    Filed: May 16, 2018
    Publication date: September 27, 2018
    Applicant: HOYA CORPORATION
    Inventors: Toshihiko ORIHARA, Kazuhiro HAMAMOTO, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 10001699
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: June 19, 2018
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20180081264
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Application
    Filed: November 28, 2017
    Publication date: March 22, 2018
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 9897909
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: February 20, 2018
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20170263444
    Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.
    Type: Application
    Filed: September 14, 2015
    Publication date: September 14, 2017
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Tatsuo ASAKAWA, Hirofumi KOZAKAI
  • Patent number: 9740091
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: August 22, 2017
    Assignee: HOYA CORPORATION
    Inventors: Takahiro Onoue, Hirofumi Kozakai
  • Publication number: 20170023853
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Application
    Filed: April 21, 2016
    Publication date: January 26, 2017
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Publication number: 20170010527
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Application
    Filed: September 26, 2016
    Publication date: January 12, 2017
    Applicant: HOYA CORPORATION
    Inventors: Toshihiko ORIHARA, Kazuhiro HAMAMOTO, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 9507254
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 29, 2016
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Tsutomu Shoki, Junichi Horikawa
  • Patent number: 9494851
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: November 15, 2016
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20160147139
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.
    Type: Application
    Filed: July 15, 2014
    Publication date: May 26, 2016
    Applicant: HOYA CORPORATION
    Inventors: Takahiro ONOUE, Hirofumi KOZAKAI
  • Patent number: 9348217
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: May 24, 2016
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20150205196
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.
    Type: Application
    Filed: September 24, 2013
    Publication date: July 23, 2015
    Applicant: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Tsutomu Shoki, Junichi Horikawa