Abstract: A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.

Abstract: An object of the present invention is to provide a photosensitive resin composition for suppressing standing wave traces and forming a resist pattern film having a rectangular cross section. The photosensitive resin composition of the present invention contains polymer (A) having an acid dissociative group; photoacid generator (B); carbamic acid ester (C) having a hydroxyl group; and solvent (D), the solvent (D) containing at least one solvent (D1) selected from, for example, propylene glycol monomethyl ether acetate and at least one solvent (D2) selected from, for example, dipropylene glycol dimethyl ether.

Abstract: The present photosensitive resin composition includes a polymer (A) having a structural unit (a1) represented by a formula (a1), a structural unit (a2) represented by a formula (a2), and a structural unit (a3) represented by a formula (a3), and a photoacid generator (B). In the formulae (a1) to (a3), R12, R22, and R32 each independently represent an organic group having 1 to 10 carbon atoms; R21 represents a substituted or non-substituted alkyl group having 1 to 10 carbon atoms; R31 represents a hydrogen atom, a substituted or non-substituted alkyl group having 1 to 10 carbon atoms, or a halogen atom; R13 and R23 each independently represent an acid dissociable group; R33 represents a hydroxyaryl group; and l, m and n independently represent an integer from 0 to 10.

Abstract: The present photosensitive resin composition includes a polymer (A) having a structural unit (a1) represented by a formula (a1), a structural unit (a2) represented by a formula (a2), and a structural unit (a3) represented by a formula (a3) and a photoacid generator (B). In the formulae (a1) to (a3), R11, R21, and R31 each independently represent a hydrogen atom, a substituted or non-substituted alkyl group having 1 to 10 carbon atom or a halogen atom; R12 and R32 each independently represent a divalent organic group; R22 represents a substituted or non-substituted alkanediyl group having 2 to 10 carbon atoms; R13 represents an acid dissociable group having an alicyclic structure; R23 represents an alkyl group having 1 to 10 carbon atoms; R33 represents a hydroxyaryl group; and 1, m and n each independently represent an integer from 0 to 10.

Abstract: A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.

Abstract: The present invention provides a photosensitive resin composition including: an alkali-soluble resin (A) having more than 30% by mass and less than 70% by mass of a structural unit represented by the Formula (1) below; a compound (B) having at least one ethylenically unsaturated double bond per molecule; and a photo radical polymerization initiator (C) having an oxime ester structure; wherein a content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the alkali-soluble resin (A) is 3 to 20 parts by mass. In Formula (1), R1 represents a hydrogen atom or a C1-4 alkyl group. R2 represents a single bond or a divalent organic group. R3 each independently represent a hydrogen atom, a hydroxyl group, or an optionally substituted alkyl group.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (al) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: The present invention provides a photosensitive resin composition including: an alkali-soluble resin (A) having more than 30% by mass and less than 70% by mass of a structural unit represented by the Formula (1) below; a compound (B) having at least one ethylenically unsaturated double bond per molecule; and a photo radical polymerization initiator (C) having an oxime ester structure; wherein a content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the alkali-soluble resin (A) is 3 to 20 parts by mass. In Formula (1), R1 represents a hydrogen atom or a C1-4 alkyl group. R2 represents a single bond or a divalent organic group. R3 each independently represent a hydrogen atom, a hydroxyl group, or an optionally substituted alkyl group.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin (A); a compound having at least one ethylenically unsaturated double bond per molecule (B); a photo radical polymerization initiator having a keto oxime ester structure (C); and a compound represented by the Formula (1) or (2) below (D); wherein the content of the photo radical polymerization initiator (C) is 0.5 to 5 times the content of the compound (D), and the content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the compound (B) is 3 to 20 parts by mass. In Formula (1), the six R1s each independently represent a hydrogen atom or an electron-donating group, and n represents 0 or 1. In Formula (2), the six R2s each independently represent a hydrogen atom or an electron-donating group, and m represents 0 or 1.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.

Abstract: A pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The resist film is exposed. The exposed resist film is developed using a developer having an organic solvent content of 80 mass % or more. The photoresist composition includes a first polymer, a second polymer, and an acid generator. The first polymer is a base polymer and includes a first structural unit that includes an acid-labile group. The second polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the first polymer. The second structural unit is represented by a formula (1) or a formula (2).

Abstract: A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer, a radiation-sensitive acid generator, and an acid diffusion controller which includes a compound having an amide group. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.

Abstract: A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Abstract: A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Abstract: The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin (A); a compound having at least one ethylenically unsaturated double bond per molecule (B); a photo radical polymerization initiator having a keto oxime ester structure (C); and a compound represented by the Formula (1) or (2) below (D); wherein the content of the photo radical polymerization initiator (C) is 0.5 to 5 times the content of the compound (D), and the content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the compound (B) is 3 to 20 parts by mass. In Formula (1), the six R1s each independently represent a hydrogen atom or an electron-donating group, and n represents 0 or 1. In Formula (2), the six R2s each independently represent a hydrogen atom or an electron-donating group, and m represents 0 or 1.