Abstract: A keyboard apparatus is provided, which is provided with plural keys 2 disposed in parallel, plural transmission members 10 rotating in response to a key pressing operation on the plural keys, and plural hammer members 11 rotating in accordance with rotation of the transmission member to give an action load to the key. The weights of the transmission members together with the weights of the hammer members bring the plural keys to the initial positions and initial loads of the keys are adjusted by the weights of the hammer members. Even if the weight of the hammer member is changed, the initial load of the key can be adjusted based on the weight of the transmission member. Therefore, when the weights of the hammer members are changed, the initial loads of the keys can be kept constant on the high-pitched tone side and the low-pitched tone side.

Abstract: Exemplary embodiments of a facility or an arrangement capable of producing a high strength steel sheet or a hot dip zinc coated high strength steel sheet according to the present invention are provided which can make a quenching facility and tempering facility continuous treatment facilities. For example, an improvement in the material quality can be effectuated due to tempering enable improvement of the hole expandability. In addition, an elongation of the sheet can be improved.

Abstract: A ventilation and air conditioning apparatus for a vehicle includes: a ventilator that sucks air from outside the vehicle; an air conditioner that conditions air inside the vehicle; a duct for fresh outside air that connects the ventilator with the air conditioner so as to supply the air that the ventilator has sucked from outside the vehicle to the air conditioner; and a duct for conditioned air that supplies the conditioned air blown out from the air conditioner to inside the vehicle. The duct for fresh outside air is branched so as to be connected to the duct for conditioned air. With this configuration, even if the operation of the air conditioner is stopped due to, e.g., a leakage of a flammable refrigerant, an amount of ventilation can be secured in the vehicle.

Abstract: A nitride semiconductor light-emitting diode element 1 includes a nitride semiconductor layer 12 having a bottom surface and an upper surface and containing a light emitting layer 12b inside, and a supporting substrate 11 made from a metal is bonded to the bottom surface of the nitride semiconductor layer 12. A light reflecting depression A1 to reflect light generated in the light emitting layer 12b is formed in the bottom surface of the nitride semiconductor layer 12. According to the nitride semiconductor light-emitting diode element 1, since the light generated from the light emitting layer 12b and propagated in the nitride semiconductor layer 12 in a layer direction is reflected by the light reflecting depression A1 and its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layer 12 within a critical angle is increased.

Abstract: The present invention includes a keyboard chassis 1; keys 2 which are arranged on the keyboard chassis 1 and rotate in an up and down direction by bending a bendable section 22 positioned in the rear; and a key rotation holding section 30 for holding the rotation fulcrum of a key 2 stable when it rotates in the up and down direction. Accordingly, the rotation fulcrum of the key 2 is kept stable by a first supporting section 31 and a second supporting section 32 of the key rotation holding section 30 when the key 2 is depressed and the bendable section 22 bends in the up and down direction, whereby the key 2 is stably rotated. Therefore, regardless of whether the front portion of the key 2 is being depressed or the rear portion thereof is being depressed, the rotation movement of the key 2 will always remain stable.

Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Abstract: Disclosed is a non-azeotropic refrigerant mixture containing tetrafluoropropane as a high-boiling refrigerant and a refrigeration cycle apparatus in which a non-azeotropic refrigerant mixture containing tetrafluoropropane as a high-boiling refrigerant circulates through a refrigeration cycle so as to avoid occurrence of negative pressure in a low-pressure circuit. The non-azeotropic refrigerant mixture is characterized in that a mixing ratio of a high-boiling refrigerant and a low-boiling refrigerant is determined so that a saturated vapor line where pressure is 0.00 MPa is not higher than ?45° C. in a low-pressure circuit formed between the decompressor to the compressor.

Abstract: Disclosed is a keyboard device 100, in which a plurality of keys 3 are attached to a keyboard chassis 1 rotatably in a keying direction. In the keyboard device 100, a key pressing member 20 of the keyboard chassis 1 includes sliding portions 26 as protruding parts. Chassis attachment portions 36 of the keys 3 include opening portions 36a as recessed parts. A configuration is adopted so that, in a state where the sliding portions 26 and the opening portions 36a are engaged with other, the keys 3 can be prevented from dropping off from the keyboard chassis 1, and inclination of the keys 3 in a transverse direction can be suppressed.

Abstract: A high strength steel sheet excellent in formability which has a chemical composition in mass %: C: 0.03 to 0.20%, Si: 0.005 to 0.3%, Mn: 1.0 to 3.1%, P: 0.001 to 0.06%, S: 0.001 to 0.01%, N: 0.0005 to 0.01%, Al: 0.2 to 1.2%, Mo?0.5%, and the balance: Fe and inevitable impurities, with the proviso that the values of mass % for Si and Al satisfy the following formula (1): (0.0012×[objective value of TS]?0.29?[Si])/2.45<Al<1.5?3×[Si]??(1) wherein [objective value of TS] represents a design strength value for the steel sheet in an Mpa unit, and has a metal structure containing ferrite and martensite. The above high strength steel sheet is also excellent in formability and the capability of being chemically treated and that of being hot-dip zinc sheeted.

Abstract: A fixing structure of an exterior member to an optical fiber cable includes an optical fiber cable having a coating layer formed on an outer circumference of a bare optical fiber, and the exterior member has a through-hole through which the optical fiber cable can be inserted. The exterior member of the optical fiber cable has a light shielding member to cover an outer circumference of the optical fiber cable, the light shielding member is fixed at a part where the exterior member is externally mounted, and an inner surface of the through-hole of the exterior member is bonded to the light shielding member.

Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Abstract: High-strength steel sheet excellent in hole-expandability and ductility, characterized by; comprising, in mass %, C: not less than 0.01% and not more than 0.20%, Si: not more than 1.5%, Al: not more than 1.5%, Mn: not less than 0.5% and not more than 3.5%, P: not more than 0.2%, S: not less than 0.0005% and not more than 0.009%, N: not more than 0.009%, Mg: not less than 0.0006% and not more than 0.01%, O: not more than 0.005% and Ti: not less than 0.01% and not more than 0.20% and/or Nb: not less than 0.01% and not more than 0.10%, with the balance consisting iron and unavoidable impurities, having Mn %, Mg %, S % and O % satisfying equations (1) to (3), and having the structure primarily comprising one or more of ferrite, bainite and martensite. [Mg %]?([O %]/16×0.8)×24??(1) [S %]?([Mg %]/24?[O %]/16×0.8+0.00012)×32??(2) [S %]?0.

Abstract: In a laminated steel plate in which steel plates are joined to both faces of a core layer, the core layer is formed of a meshed wire group formed using wires in a mesh form and a resin sheet, the wires forming the meshed wire group have a tensile strength of 601 MPa or higher, and an opening of the meshed wire group is equal to or less than ten times the thickness of the steel plates. By thus defining the tensile strength of the wires, light-weightness can be achieved compatibly with high rigidity and shock resistance, and by defining the opening of the meshed wire group, workability and shape stability after being processed can be improved.

Abstract: High-strength steel sheet excellent in hole-expandability and ductility, characterized by; comprising, in mass %, C: not less than 0.01% and not more than 0.20%, Si: not more than 1.5%, Al: not more than 1.5%, Mn: not less than 0.5% and not more than 3.5%, P: not more than 0.2%, S: not less than 0.0005% and not more than 0.009%, N: not more than 0.009%, Mg: not less than 0.0006% and not more than 0.01%, O: not more than 0.005% and Ti: not less than 0.01% and not more than 0.20% and/or Nb: not less than 0.01% and not more than 0.10%, with the balance consisting iron and unavoidable impurities, having Mn %, Mg %, S % and O % satisfying equations (1) to (3), and having the structure primarily comprising one or more of ferrite, bainite and martensite. [Mg %]?([O %]/16×0.8)×24??(1) [S %]?([Mg %]/24?[O %]/16×0.8+0.00012)×32??(2) [S %]?0.

Abstract: The present invention includes a keyboard chassis 1; keys 2 which are arranged on the keyboard chassis 1 and rotate in an up and down direction by bending a bendable section 22 positioned in the rear; and a key rotation holding section 30 for holding the rotation fulcrum of a key 2 stable when it rotates in the up and down direction. Accordingly, the rotation fulcrum of the key 2 is kept stable by a first supporting section 31 and a second supporting section 32 of the key rotation holding section 30 when the key 2 is depressed and the bendable section 22 bends in the up and down direction, whereby the key 2 is stably rotated. Therefore, regardless of whether the front portion of the key 2 is being depressed or the rear portion thereof is being depressed, the rotation movement of the key 2 will always remain stable.

Abstract: A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Abstract: The present invention provides high strength thin-gauge steel sheet with excellent elongation and hole expandability having a tensile strength of 500 MPa or more and a method of production of high strength thin-gauge steel sheet with excellent elongation and hole expandability enabling production of this on an industrial scale, that is, high strength thin-gauge steel sheet comprised of, by mass %, C: 0.03 to 0.25%, Si: 0.013 to 0.299%, Mn: 0.8 to 3.1%, P?0.02%, S?0.02%, Al?2.0%, N?0.01%, and a balance of Fe and unavoidable impurities and having a microstructure comprised of ferrite with an area fraction of 10 to 85% and residual austenite with a volume fraction of 1 to 10%, an area fraction of 10% to 60% of tempered martensite, and a balance of bainite.

Abstract: In an electronic keyboard instrument, a first switch board 11 and a second switch board 12 are independently provided in a keyboard chassis 1 separated from each other. The first switch board 11 has a first switch that is turned ON by a key 2 arranged on the keyboard chassis 1 in a manner to be rotatable in a vertical direction upon the depression of the key 2. The second switch board 12 has a second switch 5 that is turned ON by a hammer member 3 that rotates to be displaced in response to the depression of the key 2 and applies action load to the key 2. Accordingly, even if the second switch board 12 receives an impact from the hammer member 3 when the hammer member 3 turns ON the second switch 5, the impact is not easily transmitted to the first switch 4.

Abstract: Disclosed is a keyboard device 100, in which a plurality of keys 3 are attached to a keyboard chassis 1 rotatably in a keying direction. In the keyboard device 100, a key pressing member 20 of the keyboard chassis 1 includes sliding portions 26 as protruding parts. Chassis attachment portions 36 of the keys 3 include opening portions 36a as recessed parts. A configuration is adopted so that, in a state where the sliding portions 26 and the opening portions 36a are engaged with other, the keys 3 can be prevented from dropping off from the keyboard chassis 1, and inclination of the keys 3 in a transverse direction can be suppressed.

Abstract: A high strength steel sheet excellent in formability which has a chemical composition in mass %: C: 0.03 to 0.20%, Si: 0.005 to 0.3%, Mn: 1.0 to 3.1%, P: 0.001 to 0.06%, S: 0.001 to 0.01%, N: 0.0005 to 0.01%, Al: 0.2 to 1.2%, Mo?0.5%, and the balance: Fe and inevitable impurities, with the proviso that the values of mass % for Si and Al satisfy the following formula (1): (0.0012×[objective value of TS]?0.29?[Si])/2.45<Al<1.5?3×[Si] . . . (1) wherein [objective value of TS] represents a design strength value for the steel sheet in an Mpa unit, and has a metal structure containing ferrite and martensite. The above high strength steel sheet is also excellent in formability and the capability of being chemically treated and that of being hot-dip zinc sheeted.