Patents by Inventor Hirokazu Ueda

Hirokazu Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190301019
    Abstract: There is provided a boron-based film forming method for forming a boron-based film mainly containing boron on a substrate. The method includes steps of loading a substrate into a chamber of a film forming apparatus for forming the boron-based film by plasma CVD using capacitively-coupled plasma, supplying a processing gas containing a boron-containing gas into the chamber, applying a high frequency power for generating the capacitively-coupled plasma and forming the boron-based film on the substrate by generating a plasma of the processing gas by the high frequency power. A film stress of the boron-based film is adjusted by the high frequency power in the applying step.
    Type: Application
    Filed: March 25, 2019
    Publication date: October 3, 2019
    Inventors: Yoshimasa WATANABE, Masahiro OKA, Jinwang LI, Yuuki YAMAMOTO, Hirokazu UEDA
  • Patent number: 10388524
    Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: August 20, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hirokazu Ueda, Masahiro Oka, Hiraku Ishikawa, Yoshimasa Watanabe, Syuhei Yonezawa
  • Publication number: 20190244838
    Abstract: A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 8, 2019
    Inventors: Yoshimasa WATANABE, Masahiro OKA, Hirokazu UEDA, Yuuki YAMAMOTO
  • Publication number: 20190237326
    Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Inventors: Takayuki KOMIYA, Hirokazu UEDA, Atsushi ENDO
  • Publication number: 20190141258
    Abstract: An imaging apparatus includes: a finder; a grip portion on a side of a first direction relative to the finder; a touch operation member provided on a rear surface of the imaging apparatus on a side of the first direction relative to the finder, on a side of a second direction relative to the grip portion, the second direction being opposite to the first direction, and on a side of a third direction relative to a center of the imaging apparatus, the third direction being perpendicular to the first direction and being oriented from the center toward the finder; and a control unit configured to control the imaging apparatus so as to execute a first function in accordance with a slide operation in the first direction and to execute a second function in accordance with a slide operation in the second direction.
    Type: Application
    Filed: November 6, 2018
    Publication date: May 9, 2019
    Inventors: Koji Yoshida, Jun Kamiya, Haruhisa Ueda, Takahiro Akimoto, Kimihiro Masuyama, Takuma Iwagami, Hirokazu Izuoka, Takuro Miyajima, Daiyu Ueno, Ryu Wakui, Eriko Sato, Takeshi Kikkawa, Shotaro Yanai, Kenji Yokoyama
  • Patent number: 10249498
    Abstract: A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using a abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: April 2, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Peter L. G. Ventzek, Hirokazu Ueda
  • Publication number: 20180350598
    Abstract: In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.
    Type: Application
    Filed: June 4, 2018
    Publication date: December 6, 2018
    Inventors: Yoshimasa WATANABE, Masahiro OKA, Hirokazu UEDA
  • Publication number: 20180190521
    Abstract: Disclosed is a substrate processing apparatus including: n (n is an integer of 4 or more) vacuum processing modules each provided with a vacuum container for processing a substrate in a vacuum atmosphere; and an auxiliary facility group including a processing gas supply facility, an evacuation facility, a chiller facility, and a power supply facility. The n vacuum processing modules are grouped into first and second group sets, and in each group set, the vacuum processing modules included in each group share an auxiliary facility selected from the auxiliary facility group.
    Type: Application
    Filed: December 26, 2017
    Publication date: July 5, 2018
    Inventor: Hirokazu Ueda
  • Publication number: 20180174838
    Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).
    Type: Application
    Filed: December 6, 2017
    Publication date: June 21, 2018
    Inventors: Hirokazu UEDA, Masahiro OKA, Hiraku ISHIKAWA, Yoshimasa WATANABE, Syuhei YONEZAWA
  • Publication number: 20180012763
    Abstract: Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.
    Type: Application
    Filed: December 14, 2015
    Publication date: January 11, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hirokazu UEDA, Masahiro OKA, Yuuki KOBAYASHI, Yasuhiro SUGIMOTO
  • Patent number: 9658106
    Abstract: There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: May 23, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuuki Kobayashi, Hirokazu Ueda, Kohei Yamashita, Peter L. G. Ventzek
  • Publication number: 20160372327
    Abstract: A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using a abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives.
    Type: Application
    Filed: April 14, 2016
    Publication date: December 22, 2016
    Inventors: Peter L.G. Ventzek, Hirokazu Ueda
  • Publication number: 20160351398
    Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.
    Type: Application
    Filed: May 26, 2016
    Publication date: December 1, 2016
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hirokazu UEDA, Hidenori MIYOSHI, Masahiro OKA, Genji NAKAMURA, Yuki KOBAYASHI, Yasuhiro SUGIMOTO
  • Patent number: 9472404
    Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: October 18, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hirokazu Ueda, Masahiro Oka, Yasuhiro Sugimoto, Masahiro Horigome, Yuuki Kobayashi
  • Publication number: 20160189963
    Abstract: Disclosed is a method of performing doping by implanting a dopant to a processing target substrate. First, in an oxide film forming step, an oxide film is formed on the processing target substrate prior to performing a doping treatment. In addition, after the oxide film is formed on the processing target substrate, a plasma doping treatment is performed from a top of the oxide film after the oxide film forming step.
    Type: Application
    Filed: December 21, 2015
    Publication date: June 30, 2016
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hirokazu UEDA, Masahiro OKA, Yuuki KOBAYASHI, Yasuhiro SUGIMOTO
  • Patent number: 9230799
    Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: January 5, 2016
    Assignees: TOHOKU UNIVERSITY, Fuji Electric Co., Ltd., TOKYO ELECTRON LIMITED
    Inventors: Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hasebe, Tadahiro Ohmi
  • Publication number: 20150318220
    Abstract: There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.
    Type: Application
    Filed: April 30, 2015
    Publication date: November 5, 2015
    Inventors: Yuuki KOBAYASHI, Hirokazu UEDA, Kohei YAMASHITA, Peter L.G. VENTZEK
  • Patent number: 9165771
    Abstract: A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: October 20, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Peter Ventzek, Takenao Nemoto, Hirokazu Ueda, Yuuki Kobayashi, Masahiro Horigome
  • Publication number: 20150187582
    Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.
    Type: Application
    Filed: December 24, 2014
    Publication date: July 2, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hirokazu UEDA, Masahiro OKA, Yasuhiro SUGIMOTO, Masahiro HORIGOME, Yuuki KOBAYASHI
  • Patent number: 9034774
    Abstract: This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: May 19, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Kouji Tanaka, Hirokazu Ueda