Abstract: An organic hydride production device comprises an electrolyzer and a water removal device. The electrolyzer has a cathode chamber. The water removal device has a container that stores a catholyte fed from the cathode chamber, a drain pipe that discharges dragged water from the container, a detector that detects that the dragged water has been accumulated in the container, and a switcher that is provided in the drain pipe, is capable of switching between a regulation state in which drainage from the drain pipe is regulated and an execution state in which the drainage is executed, and switches from the regulation state to the execution state based on a detection result of the detector.

Abstract: To provide an electrolytic apparatus and an electrolytic method which can remove a risk of reaching an explosion limit of hydrogen by gradual accumulation of a very small amount of gas in a circulation line of an electrolytic solution in an electrolytic process generating hydrogen. The electrolytic apparatus 1 is characterized by including an anode gas feeding line 20 connecting a gas phase region 21 to an anode side gas-liquid separation means in order to dilute the concentration of the hydrogen gas by feeding anode gas into the gas phase region 21 in which hydrogen gas can exist as a gas phase. By feeding at least a part of the anode gas to the gas phase region 21 with the anode gas feeding line 20, the hydrogen gas in the gas phase region 21 is diluted with the anode gas so that the concentration of the hydrogen gas is surely less than a lower limit value of explosion limit.

Abstract: To provide an electrolytic apparatus and an electrolytic method which can remove a risk of reaching an explosion limit of hydrogen by gradual accumulation of a very small amount of gas in a circulation line of an electrolytic solution in an electrolytic process generating hydrogen. The electrolytic apparatus 1 is characterized by including an anode gas feeding line 20 connecting a gas phase region 21 to an anode side gas-liquid separation means in order to dilute the concentration of the hydrogen gas by feeding anode gas into the gas phase region 21 in which hydrogen gas can exist as a gas phase. By feeding at least a part of the anode gas to the gas phase region 21 with the anode gas feeding line 20, the hydrogen gas in the gas phase region 21 is diluted with the anode gas so that the concentration of the hydrogen gas is surely less than a lower limit value of explosion limit.

Abstract: The present invention relates to an apparatus to produce oxidizing agent-rich sulfuric acid by electrolysis of sulfuric acid. More specifically, it relates to the apparatus by which dilute sulfuric acid of the specified temperature and concentration is formed within the electrolysis system and then, by electrolysis of the formed dilute sulfuric acid, electrolytic sulfuric acid containing richly oxidizing agent is formed at a high efficiency and safely under the temperature control.

Abstract: Provided are: a method of measuring the total concentration of oxidizing agents, by which the total concentration can be determined in a single measurement with simple operations even in an evaluation solution containing multiple components such as persulfuric acid, perosulfate and hydrogen peroxide; a simple and inexpensive concentration meter for measuring the total concentration of oxidizing agents; and a sulfuric acid electrolysis device comprising the concentration meter. The method according to the present invention is a method of measuring the total concentration of oxidizing agent(s) in an evaluation solution containing at least one oxidizing agent. The method comprises at least the steps of: heat-treating the evaluation solution at 50 to 135° C.; and detecting hydrogen peroxide in the thus heat-treated evaluation solution.

Abstract: The present invention provides an electrically conductive diamond electrode comprising an electrically conductive substrate and an electrically conductive diamond layer coated on the surface of the electrically conductive substrate, featuring that: 1) the thickness of the electrically conductive diamond layer is 1˜25 ?m, 2) the potential window fulfills Equation (1) and 3) the ratio (A/B) of the diamond component A and the non-diamond component B by the Raman spectroscopic analysis fulfills Equation (2). 2.1V?potential window?3.5V??(1) 1.5<A/B?6.5??(2) A: Intensity at the wave number 1300 cm?1 by the Raman spectroscopic analysis B: Intensity at the wave number 1500 cm?1 by the Raman spectroscopic analysis.

Abstract: Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa?1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc?1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant)??Equation (1) Fe=(I×S×R×T)/(2×Faraday constant)??Equation (2) I: Electrolytic current (A) S: Time: 60 second (Fixed) R: Gas constant (0.082 1·atm/K/mol) K: Absolute temperature (273.

Abstract: The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.

Abstract: In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece.

Abstract: According to embodiments, a cleaning liquid includes an oxidizing substance and hydrofluoric acid and exhibiting acidity. A cleaning method is disclosed. The method includes producing an oxidizing solution including an oxidizing substance by one selected from electrolyzing a sulfuric acid solution, electrolyzing hydrofluoric acid added to a sulfuric acid solution, and mixing a sulfuric acid solution with aqueous hydrogen peroxide. The method includes supplying the oxidizing solution and hydrofluoric acid to a surface of an object to be cleaned.

Abstract: According to one embodiment, a cleaning method is disclosed. The method can produce an oxidizing solution including an oxidizing substance by electrolyzing a dilute sulfuric acid solution. In addition, the method can supply a highly concentrated inorganic acid solution individually, sequentially, or substantially simultaneously with the oxidizing solution to a surface of an object to be cleaned.

Abstract: The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.

Abstract: Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa?1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc?1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant) ??Equation (I) Fe=(I×S×R×T)/(2×Faraday constant) ??Equation (2) I: Electrolytic current (A) S: Time: 60 second (Fixed) R: Gas constant (0.082 1·atm/K/mol) K: Absolute temperature (273.

Abstract: A method for producing a magnetic recording medium having a flat surface and a strong exchange bias field, and excellent in thermal stability. The method for producing a magnetic recording medium related to the present invention comprising a nonmagnetic substrate 1, a metal underlayer 2, and a ferromagnetic metal layer 3 formed successively in multilayer. The method comprises a step of forming the ferromagnetic layer 3 where ferromagnetic films 3a, 3b and one or more nonmagnetic metal spacer layer 4 are alternately formed in a multilayer and a step of allowing at least the interface of the nonmagnetic metal spacer layers 4 to physically adsorb oxygen and/or nitrogen.