Abstract: An apparatus for processing a substrate by supplying a processing gas to the substrate in a processing container. The apparatus comprises: a mounting table provided in the processing container and for mounting the substrate; a gas shower head comprising a gas diffusion space provided at a position facing the mounting table and for diffusing the processing gas, and a shower plate having a plurality of gas supply holes for supplying the processing gas diffused in the gas diffusion space to the processing container; a gas supply portion provided to supply the processing gas to the gas diffusion space and having a flow rate adjusting portion for the processing gas; a pressure sensor portion provided in the gas diffusion space and to output a pressure signal corresponding to a pressure measurement value in the gas diffusion space; and a controller to output a control signal for adjusting a flow rate of the processing gas.

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

Abstract: A method of forming a metal superlattice structure includes depositing, on a substrate, a layer of a first metal with face-centered-cubic (fcc) crystal structure. The method further includes depositing a layer of ruthenium (Ru) metal with fcc crystal structure on the layer of the first metal. The layer of the first metal may cause the layer of ruthenium metal to have fcc crystal structure.

Abstract: An etching method of etching a wafer by sputtering using ions in plasma includes accommodating the wafer in an internal space of a plasma processing apparatus, and etching a multilayer film by sputtering using ions. The wafer includes a multilayer film containing a non-volatile material and a mask layer on a surface of the multilayer film, and an exposed space of a region not covered by the mask layer. An aspect ratio h/D obtained by dividing a height h of the mask layer by a distance D between two adjacent sidewalls of the mask layer satisfies a condition: h/D?1/(tan (?)?tan (?)). ? indicates an inclination angle of the sidewalls with a vertical surface perpendicular to the surface. ? indicates an upper limit of an incidence angle of ions on the vertical surface. ? is larger than ?.

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

Abstract: A riding type vehicle has a driving source, a left wheel and a right wheel, a transmission configured to receive power from the driving source to independently operate and drive the left wheel and the right wheel with regard to a rotation direction and a rotation speed, and caster wheels separately provided in a front-rear direction with respect to the left wheel and the right wheel, the riding type vehicle including two first sensors arranged on both left and right sides more to a front side than a rear end of the vehicle, the two first sensors configured to detect an obstacle target located on a rear side, the obstacle target being a target becoming an obstacle at the time of reversing or turning.

Abstract: A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

Abstract: A riding type vehicle has a driving source, a left wheel and a right wheel, a transmission configured to receive power from the driving source to independently operate and drive the left wheel and the right wheel with regard to a rotation direction and a rotation speed, and caster wheels separately provided in a front-rear direction with respect to the left wheel and the right wheel, the riding type vehicle including two first sensors arranged on both left and right sides more to a front side than a rear end of the vehicle, the two first sensors configured to detect an obstacle target located on a rear side, the obstacle target being a target becoming an obstacle at the time of reversing or turning.

Abstract: A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.

Abstract: A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.

Abstract: A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.

Abstract: A riding type vehicle has a driving source, a left wheel and a right wheel, a transmission configured to receive power from the driving source to independently operate and drive the left wheel and the right wheel with regard to a rotation direction and a rotation speed, and caster wheels separately provided in a front-rear direction with respect to the left wheel and the right wheel, the riding type vehicle including two first sensors arranged on both left and right sides more to a front side than a rear end of the vehicle, the two first sensors configured to detect an obstacle target located on a rear side, the obstacle target being a target becoming an obstacle at the time of reversing or turning.

Abstract: A transaxle comprises a hydrostatic transmission (HST), an axle, a gear train interposed between the HST and the axle, a casing and a partition. The casing defines an HST chamber and a gear chamber. The HST is disposed in the HST chamber. The gear train and the axle are disposed in the gear chamber. The partition is disposed in the casing so as to separate the HST chamber and the gear chamber from each other. The partition has an opening through which a hydraulic motor of the HST passes to extend from the HST chamber into the gear chamber so as to be drivingly connected to the gear train. The partition obstructs a flow of fluid between a fluid sump in the HST chamber from a fluid sump in the gear chamber.

Abstract: A transaxle comprises a hydrostatic transmission (HST), an axle, a gear train interposed between the HST and the axle, a casing and a partition. The casing defines an HST chamber and a gear chamber. The HST is disposed in the HST chamber. The gear train and the axle are disposed in the gear chamber. The partition is disposed in the casing so as to separate the HST chamber and the gear chamber from each other. The partition has an opening through which a hydraulic motor of the HST passes to extend from the HST chamber into the gear chamber so as to be drivingly connected to the gear train. The partition obstructs a flow of fluid between a fluid sump in the HST chamber from a fluid sump in the gear chamber.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: An oscillator element according to one embodiment of the present invention includes a magnetoresistive element having a magnetization free layer, magnetization fixed layer, and a tunnel barrier layer. Provided on the magnetization free layer are a protection layer and an electrode having a point contact section where the electrode is partially in electrical contact with the protection layers. An interlayer insulating film is provided between the electrode and the protection layer. The area of the interface between the magnetization free layer and the tunnel barrier layer is larger than the surface area of the point contact section. Moreover, a portion of the protection layer in contact with the interlayer insulating film has a smaller thickness in a surface normal direction than the portion of the protection layer in contact with the electrode.

Abstract: To provide a frequency conversion device which uses a magneto-resistive device and thereby can correspond to a Si-based MMIC and a GaAs-based MMIC. A frequency conversion apparatus according to the present invention includes: a frequency conversion device made of a magneto-resistive device including a magnetic free layer, an intermediate layer, and a magnetic pinned layer; a magnetic field applying mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the frequency conversion device, and used to input an external input signal.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Abstract: Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.

Abstract: A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.