Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, and a recording element electrically connected with the first electrode. The recording element records, as analog data, a maximum value of a change amount dV/dt of a voltage of the first electrode over time.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: A semiconductor device includes a semiconductor layer having first and second surfaces and including a first semiconductor region of a first type, first and second electrodes, a first insulation region, a first conductive portion electrically connected to the first electrode, a second insulation region, a first control electrode in the second insulation region, a second semiconductor region of the first type between the first and second insulation regions, a second conductive portion adjacent to the second semiconductor region and forming a Schottky junction with the second semiconductor region, a third semiconductor region of a second type on the first semiconductor region, and a fourth semiconductor region of the first type between the third semiconductor region and the first electrode. The third and fourth semiconductor regions are electrically connected to the first electrode.

Abstract: A rotating electric machine 100 having a rotor 1, a stator 2, and a coil 3 including a coil conductor 31 wound around teeth 21b provided on at least one of the rotor 1 and the stator 2 includes a spacer section 42 configured to extend along a slot S formed between the teeth 21b and to be inserted between turns of the coil conductor 31 to define a gap G between the turns, and a cooling medium supply section 6 configured to distribute a cooling medium in the gap G. A notched section 421 cut out in such a manner that a widthwise dimension of the spacer section 42 is relatively short is provided in a middle of an extension of the spacer section 42.

Abstract: A medical image processing method includes obtaining a first set of projection data by performing, with a first CT apparatus including a first detector with a first pixel size, a first CT scan of an object in a first imaging region of the first detector; obtaining a first CT image with a first resolution by reconstructing the first set of projection data; obtaining a processed CT image with a resolution higher than the first resolution by applying a machine-learning model for resolution enhancement to the first CT image; and displaying the processed CT image or outputting the processed CT image for analysis. The machine-learning model is obtained by training using a second CT image based on a second set of projection data acquired by a second CT scan of the object in a second imaging region with a second CT apparatus including a second detector with a second pixel size.

Abstract: A semiconductor device according to an embodiment includes: a first electrode; a first semiconductor region of a first conductive type provided on the first electrode; a second semiconductor region of a second conductive type provided on the first semiconductor region; a third semiconductor region of a first conductive type provided on the second semiconductor region; a gate electrode provided in the second semiconductor region via a gate insulating film; a contact portion having a first portion and a second portion; and a second electrode electrically connected to the contact portion. The first portion is aligned with the third semiconductor region and a part of the second semiconductor region, and the second portion is provided at a lower end of the first portion and has a width larger than a width of the first portion at an upper end of the third semiconductor region.

Abstract: An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.

Abstract: The trench structure part includes a field plate electrode, a first insulating film, a second insulating film, the second insulating film extending to be more proximate to the first surface than the first insulating film, a gate electrode including a first portion located on the second insulating film, and a second portion located on the first insulating film, the second portion being thicker than the first portion, and a third insulating film. The gate contact part extends from the gate wiring layer toward the second portion and contacts the second portion. The gate contact part is not positioned between the first portion and the gate wiring layer. The first portion is positioned adjacent, in a second direction orthogonal to the first direction, to a lower end portion of the gate contact part contacting the second portion.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type including a first portion and a second portion, a second semiconductor layer of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, a gate electrode located between the second semiconductor region and the fourth semiconductor region and between the third semiconductor region and the fourth semiconductor region in a second direction, a first insulating region, a third electrode, and a second insulating region.

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor layer that includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, a third electrode, a first insulating region, a second insulating region, a fourth electrode that has a plurality of portions consecutive in a first direction, the plurality of portions including a first portion that has a first width in a second direction, a second portion that is located closer to the second electrode than the first portion in the first direction and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction, and a third insulating region.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The conductive member includes a conductive member end portion and a conductive member other-end portion. The conductive member end portion is between the first electrode and the conductive member other-end portion. The conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is between the first and second electrodes. The second semiconductor region is between the first partial region and the third semiconductor region. The third semiconductor region is electrically connected with the second electrode.

Abstract: A semiconductor device includes first to third conductive portions, a first insulating portion, and a semiconductor portion. The semiconductor portion includes a first semiconductor region provided between the first conductive portion and the second conductive portion, and a second semiconductor region provided between the second conductive portion and the first insulating region. The second conductive portion includes a first conductive region in Schottky junction with the first semiconductor region, and a second conductive region in Schottky junction with the second semiconductor region. When the first conductivity-type is an n-type, a work function of the first conductive region is smaller than a work function of the second conductive region. When the first conductivity-type is a p-type, the work function of the first conductive region is larger than the work function of the second conductive region.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a conductive member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The second semiconductor region is between the first partial region and the third semiconductor region. The conductive member is located between the second partial region and the third electrode. The conductive member includes a first end portion and a first other-end portion. The first end portion is between the first other-end portion and the third electrode. The conductive member includes first to third portions. The second portion is between the third portion and the third electrode. The first portion is between the second portion and the third electrode. The first portion includes the first end portion. The second portion contacts the first and third portions.

Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and a third conductive member wiring. The first conductive member includes a first conductive portion including a first face and a second conductive portion including a second face. The second conductive member includes a third conductive portion including a third face and a fourth conductive portion including a fourth face. The fourth conductive portion includes a facing conductive portion. The first semiconductor member is of a first conductive type. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The third partial region includes a facing face facing the facing conductive portion. The third conductive member wiring is electrically connected to the third conductive member.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first and second conductive members, a semiconductor member, and a first insulating member. The first conductive member is electrically connected with the second electrode or is electrically connectable with the second electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first to fourth partial regions. The third partial region is between the first and second partial regions. The second semiconductor region is between the third partial region and the third semiconductor region. The fourth partial region is between the third partial region and the second semiconductor region. At least a portion of the second semiconductor region is between the second conductive member and the third electrode. The second conductive member is electrically insulated from the second and third electrodes. The first insulating member includes first to third insulating regions.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The second electrode includes a conductive portion. The conductive portion is between the third electrode and the conductive member. The conductive member is electrically connected with the second electrode. The semiconductor member includes first to third semiconductor regions. The second semiconductor region is between the third semiconductor region and a portion of the first semiconductor region. The second semiconductor region is between the third electrode and the conductive member. The conductive portion is electrically connected with the second and third semiconductor regions. The first electrode is electrically connected with the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, and an insulating part region. The second electrode includes a first electrode portion. The semiconductor member includes a first semiconductor region. The first semiconductor region includes first to third partial regions. The first partial region is between the first electrode and the first electrode portion. The second partial region is between the first and third electrodes. The third partial region is between the first partial region and the first electrode portion. The third partial region includes first and second positions. The second position is between the first partial region and the first position. The first conductive member includes first and second portions. The first portion is between the second partial region and the third electrode. The insulating part region includes first and second insulating regions.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a fourth semiconductor region of a second conductivity type, a third electrode connected to the second electrode and the fourth semiconductor region, a first insulating region, a gate electrode, and a second insulating region.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type including a first portion and a second portion, a second semiconductor layer of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, a gate electrode located between the second semiconductor region and the fourth semiconductor region and between the third semiconductor region and the fourth semiconductor region in a second direction, a first insulating region, a third electrode, and a second insulating region.