Patents by Inventor Hiroki Yamashita

Hiroki Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200014424
    Abstract: A load drive system for driving a load supplied with power from a power line includes a control unit which controls switching between the power line and the load and a communication unit which communicates using voltage and current of the power line. When performing the switching, the control unit controls, based on a width of a transition period of the power-line current, the transition period being attributable to the switching, timing of the switching so as to move the transition period away from a center of a period corresponding to a symbol communicated by the communication unit.
    Type: Application
    Filed: August 31, 2017
    Publication date: January 9, 2020
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Tomohiko YANO, Hiroki YAMASHITA, Taizo YAMAWAKI, Atsushi ARATA, Mitsuhiko WATANABE, Ryusuke SAHARA, Kenichi HOSHINO
  • Patent number: 10498395
    Abstract: A power line communication apparatus includes a drive block including an actuator control circuit and a drive circuit and a communication block. The actuator control circuit generates a control pulse for controlling an actuator, and controls a transition timing of the control pulse during an operation period set within a communication cycle by a communication clock. The drive circuit controls a driving current of the actuator supplied from a DC power source through a power line based on the control pulse in which the transition timing is controlled. The communication block generates the communication clock, and modulates a current flowing through the power line in response to data to be transmitted during a signal transmission period different from the operation period, set within the communication cycle.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: December 3, 2019
    Assignee: Hitachi Automotive Systems, Ltd.
    Inventors: Hiroki Yamashita, Taizo Yamawaki, Ming Liu, Teppei Hirotsu, Ryosuke Ishida, Hirofumi Kurimoto
  • Publication number: 20190348680
    Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell or a sodium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LiFeaMnbMcPO4, formula (B): LiFeaMnbMcSiO4, or formula (C): NaFegMnhQiPO4; and carbon derived from a cellulose nanofiber supported thereon.
    Type: Application
    Filed: July 18, 2019
    Publication date: November 14, 2019
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Hiroki YAMASHITA, Tomoki HATSUMORI, Takaaki OGAMI
  • Patent number: 10468429
    Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: November 5, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Hiroki Yamashita
  • Patent number: 10461330
    Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LifeaMnbMcPO4; and carbon derived from a cellulose nanofiber supported thereon.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: October 29, 2019
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Hiroki Yamashita, Tomoki Hatsumori, Takaaki Ogami
  • Publication number: 20190221425
    Abstract: There is provided a technique that includes forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, and performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved. The cycle includes non-simultaneously performing supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and supplying a nitriding agent to the substrate, wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 18, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo HASHIMOTO, Takafumi NITTA, Hiroki YAMASHITA
  • Publication number: 20190007100
    Abstract: A power line communication apparatus includes a drive block including an actuator control circuit and a drive circuit and a communication block. The actuator control circuit generates a control pulse for controlling an actuator, and controls a transition timing of the control pulse during an operation period set within a communication cycle by a communication clock. The drive circuit controls a driving current of the actuator supplied from a DC power source through a power line based on the control pulse in which the transition timing is controlled. The communication block generates the communication clock, and modulates a current flowing through the power line in response to data to be transmitted during a signal transmission period different from the operation period, set within the communication cycle.
    Type: Application
    Filed: January 4, 2016
    Publication date: January 3, 2019
    Inventors: Hiroki YAMASHITA, Taizo YAMAWAKI, Ming LIU, Teppei HIROTSU, Ryosuke ISHIDA, Hirofumi KURIMOTO
  • Publication number: 20180337031
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.
    Type: Application
    Filed: May 17, 2018
    Publication date: November 22, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Masanori NAKAYAMA, Masaya NAGATO, Tatsuru MATSUOKA, Hiroki YAMASHITA, Takafumi NITTA, Satoshi SHIMAMOTO
  • Publication number: 20180240807
    Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.
    Type: Application
    Filed: April 19, 2018
    Publication date: August 23, 2018
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventor: Hiroki YAMASHITA
  • Publication number: 20180218897
    Abstract: Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.
    Type: Application
    Filed: January 22, 2018
    Publication date: August 2, 2018
    Inventors: Takafumi NITTA, Yushin TAKASAWA, Satoshi SHIMAMOTO, Hiroki YAMASHITA
  • Patent number: 9978767
    Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: May 22, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Hiroki Yamashita
  • Patent number: 9966385
    Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, columnar portions, and first and second interconnection portions. The stacked body includes insulating layers and electrode layers alternately stacked one layer by one layer on the substrate. The columnar portions are provided between the first and second interconnection portions and include a first row having a first columnar portion and a second row having a second columnar portion, the first columnar portion being positioned closest to the first interconnection portion, and the second columnar portion being positioned closest to the second interconnection portion. A distance between the first interconnection portion and the first columnar portion is smaller than a distance between the second interconnection portion and the second columnar portion, and the distance between the second interconnection portion and the second columnar portion is greater than 20 nanometers.
    Type: Grant
    Filed: September 12, 2016
    Date of Patent: May 8, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hiroki Yamashita, Yoshiaki Fukuzumi
  • Patent number: 9941292
    Abstract: A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first direction in the plurality of first electrode layers; a first insulating layer extending in the first direction along the semiconductor layer between the semiconductor layer and each of the plurality of first electrode layers; a second insulating layer covering the periphery of the plurality of first electrode layers; a resistive body provided on the second insulating layer; and a third insulating layer provided between the resistive body and the second insulating layer, the third insulating layer including the same material as the material of the first insulating layer.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: April 10, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Hiroki Yamashita
  • Patent number: 9929043
    Abstract: A semiconductor memory device according to an embodiment includes: a pair of insulating members separated from each other, the pair of insulating members extending in a first direction; a plurality of electrode films and a plurality of inter-layer insulating films disposed between the pair of insulating members and stacked alternately along a second direction, the second direction intersecting the first direction; a plurality of semiconductor pillars extending in the second direction and piercing the plurality of electrode films and the plurality of inter-layer insulating films; and a charge storage film disposed between one of the semiconductor pillars and one of the electrode films. An end portion on one of the insulating members side of a first electrode film of the electrode films is thicker than a central portion of the first electrode film between the pair of insulating members.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: March 27, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takamasa Ito, Hiroki Yamashita
  • Publication number: 20180083285
    Abstract: The present invention provides a positive electrode active substance for a secondary cell, the positive electrode active substance capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The present invention also provides a method for producing the positive electrode active substance for a secondary cell. That is, the present invention is a positive electrode active substance for a secondary cell, in which one or two selected from the group consisting of a water-insoluble electrically conductive carbon material and carbon obtained by carbonizing a water-soluble carbon material, and 0.1 to 5 mass % of a metal fluoride are supported on a compound containing at least iron or manganese, the compound represented by formula (A) LiFenMnbM1cPO4, formula (B) Li2FedMneM2fSiO4, or formula (C) NaFegMnhQiPO4.
    Type: Application
    Filed: September 17, 2015
    Publication date: March 22, 2018
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Hiroki YAMASHITA, Tomoki HATSUMORI, Atsushi NAKAMURA, Takaaki OGAMI
  • Publication number: 20180083280
    Abstract: The present invention provides a positive electrode active substance for a secondary cell, the positive electrode active substance capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The present invention also provides a method for producing the positive electrode active substance for a secondary cell. That is, the present invention is a positive electrode active substance for a secondary cell, in which a water-insoluble electrically conductive carbon material and carbon obtained by carbonizing a water-soluble carbon material are supported on an oxide containing at least iron or manganese, the oxide represented by formula (A) LiFeaMnbMcPO4, formula (B) Li2FedMneNfSiO4, or formula (C) NaFegMnhQiPO4.
    Type: Application
    Filed: September 17, 2015
    Publication date: March 22, 2018
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Hiroki YAMASHITA, Tomoki HATSUMORI, Atsushi NAKAMURA, Takaaki OGAMI
  • Publication number: 20180053929
    Abstract: A positive electrode active substance for a secondary cell, where the positive electrode active substance is capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The positive electrode active substance contains 0.3 to 5 mass % of graphite, 0.1 to 4 mass % of carbon obtained by carbonizing a water-soluble carbon material, or 0.1 to 5 mass % of a metal fluoride is supported on a composite containing a compound which contains at least iron or manganese, where the compound is represented by formula (A) LiFeaMnbMcPO4, formula (B) Li2FedMneNfSiO4, or formula (C) NaFegMnhQiPO4, and carbon obtained by carbonizing a cellulose nanofiber.
    Type: Application
    Filed: September 17, 2015
    Publication date: February 22, 2018
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Hiroki YAMASHITA, Tomoki HATSUMORI, Atsushi NAKAMURA, Takaaki OGAMI
  • Publication number: 20180023116
    Abstract: The purpose of the present invention is to provide the technique of a method for preparing a highly precise single-stranded DNA that makes it possible to obtain accurate results even by a simple test in a clinical sites or the like. The invention provides a highly precise single-stranded DNA product that can be utilized even in more simple and rapid genetic analyses by taking as the detection sample a single-stranded nucleotide product amplified by ligation, preferably by cycling ligation reaction, without PCR or LCR amplification.
    Type: Application
    Filed: January 29, 2016
    Publication date: January 25, 2018
    Applicant: KURASHIKI BOSEKI KABUSHIKI KAISHA
    Inventor: Hiroki YAMASHITA
  • Publication number: 20180023127
    Abstract: The purpose of the present invention is to provide a DNA detection technique by which testing can be simply and accurately performed at clinical sites or the like. The present invention provides a gene analysis method which employs, as a detection sample, a single strand nucleotide product that is amplified by ligation, and which can be performed visually in a more simple and rapid way.
    Type: Application
    Filed: January 29, 2016
    Publication date: January 25, 2018
    Applicant: KURASHIKI BOSEKI KABUSHIKI KAISHA
    Inventors: Hiroki YAMASHITA, Kazuhiko KOGOH, Shuichi OMURA
  • Patent number: 9866185
    Abstract: The high-speed and high-quality reception operation of a transimpedance amplifier of an optical communication module and a router including the same can be achieved. A preamplifier performs current/voltage conversion with respect to intersymbol interference due to bandwidth shortage of a laser diode. A threshold control circuit which generates positive and negative threshold voltages with respect to a center potential of an output signal, latch circuits, and a selector circuit are provided to the output of the preamplifier. An NRZ signal is received as a duobinary signal based on the sign determination result of the previous bit. The determination error rate of the latch circuits can thus be improved.
    Type: Grant
    Filed: January 17, 2015
    Date of Patent: January 9, 2018
    Assignee: HITACHI, LTD.
    Inventors: Takashi Takemoto, Hiroki Yamashita