Patents by Inventor Hiroko Itokazu
Hiroko Itokazu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105820Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate, a cell region, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductivity type impurity. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers includes a first region extending in the first direction from the first face toward a second face of the semiconductor substrate, and a second region extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region.Type: ApplicationFiled: February 23, 2023Publication date: March 28, 2024Inventors: Takako MOTAI, Yoko IWAKAJI, Kaori FUSE, Hiroko ITOKAZU, Keiko KAWAMURA
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Publication number: 20240097012Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.Type: ApplicationFiled: February 28, 2023Publication date: March 21, 2024Inventors: Hiroko ITOKAZU, Yoko IWAKAJI, Keiko KAWAMURA, Tomoko MATSUDAI, Kaori FUSE, Takako MOTAI
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Publication number: 20240072111Abstract: A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Inventors: Takeshi SUWA, Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU
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Publication number: 20240063264Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and an insulating member. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, and a sixth semiconductor region of the second conductivity type. The fifth semiconductor region includes a fourth partial region and a fifth partial region. The fourth partial region is located between the first partial region and the third electrode in a first direction. The fifth partial region is located between the third partial region and the fourth semiconductor region in the first direction.Type: ApplicationFiled: January 25, 2023Publication date: February 22, 2024Inventors: Yoko IWAKAJI, Tomoko MATSUDAI, Hiroko ITOKAZU
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Patent number: 11908925Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a first gate electrode, and a second gate electrode. The first gate electrode faces the second semiconductor region via a first insulating film. The second gate electrode faces the second semiconductor region via a second insulating film and faces the second electrode via a third insulating film contacting the second insulating film. The fifth semiconductor region includes a boundary portion that electrically contacts the second electrode. A distance between an upper surface of the fourth semiconductor region and the first electrode is greater than a distance between the boundary portion and the first electrode.Type: GrantFiled: September 7, 2021Date of Patent: February 20, 2024Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura
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Patent number: 11862677Abstract: A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.Type: GrantFiled: July 26, 2021Date of Patent: January 2, 2024Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu
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Patent number: 11830790Abstract: A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.Type: GrantFiled: September 10, 2021Date of Patent: November 28, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Keiko Kawamura
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Publication number: 20230307555Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes, and first and second insulating film. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The third and fourth electrodes each extend into the semiconductor device form the front surface side. The third and fourth electrodes are electrically insulated from the semiconductor part by insulating films. The semiconductor part includes first to fourth layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is partially provided between the second layer and the second electrode. The fourth layer of the first conductivity type is provided in the second layer. The fourth layer is apart from the third layer.Type: ApplicationFiled: September 12, 2022Publication date: September 28, 2023Inventors: Kaori FUSE, Keiko KAWAMURA, Tomoko MATSUDAI, Yoko IWAKAJI, Takako MOTAI, Hiroko ITOKAZU
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Publication number: 20230299076Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and first-third and second-third electrodes. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes a first semiconductor layer of a first conductivity type, second and third semiconductor layers of a second conductivity type. The second and third semiconductor layers are arranged between the first layer and the second electrode. The first-third and second-third electrodes are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode and the second-third electrode. The second electrode includes a contact portion extending into the second semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer between the contact portion and the second-third electrode. The second semiconductor layer includes a first portion facing the third semiconductor layer via the contact portion.Type: ApplicationFiled: September 1, 2022Publication date: September 21, 2023Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hiroko ITOKAZU, Tomoko MATSUDAI, Yoko IWAKAJI, Keiko KAWAMURA, Kaori FUSE
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Patent number: 11721750Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes first to seventh layers. The second of a second conductivity type is provided between the first layer of a first conductivity type and the first electrode. The third and fourth layers of the first conductivity type are arranged along the second layer between the second layer and the first electrode. The fifth layer of the second conductivity type is provided between the second electrode and the first layer. The sixth and seventh layers are arranged along the fifth layer between the first and fifth layers. The sixth and seventh layers include the first-conductivity-type impurities with first and second surface densities, respectively. The first surface density is greater than the second surface density.Type: GrantFiled: August 11, 2021Date of Patent: August 8, 2023Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu
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Publication number: 20230078785Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.Type: ApplicationFiled: January 24, 2022Publication date: March 16, 2023Inventors: Takako MOTAI, Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU, Kaori FUSE, Keiko KAWAMURA, Kohei OASA
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Publication number: 20230068786Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: ApplicationFiled: October 20, 2022Publication date: March 2, 2023Inventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Patent number: 11575031Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.Type: GrantFiled: March 15, 2021Date of Patent: February 7, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura, Kaori Fuse, Takako Motai
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Patent number: 11563113Abstract: A semiconductor device includes a semiconductor layer having first and second surfaces, a first electrode and a first gate electrode along the first surface, and a second electrode and a second gate electrode along the second surface. The layer includes a first type first region, a second type second region between the first region and the first surface and facing the first gate electrode, a first type third region between the second region and the first surface and contacting the first electrode, a second type fourth region between the first region and the second surface, facing the second gate electrode, and contacting the second electrode, and a first type fifth region between the fourth region and the second surface and contacting the second electrode. Transistors including the first and second gate electrodes have different threshold voltages that are both positive or negative.Type: GrantFiled: March 3, 2021Date of Patent: January 24, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu
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Patent number: 11538929Abstract: A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.Type: GrantFiled: February 8, 2021Date of Patent: December 27, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu, Takako Motai
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Patent number: 11502074Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: GrantFiled: August 6, 2020Date of Patent: November 15, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Publication number: 20220328666Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a first gate electrode, and a second gate electrode. The first gate electrode faces the second semiconductor region via a first insulating film. The second gate electrode faces the second semiconductor region via a second insulating film and faces the second electrode via a third insulating film contacting the second insulating film. The fifth semiconductor region includes a boundary portion that electrically contacts the second electrode. A distance between an upper surface of the fourth semiconductor region and the first electrode is greater than a distance between the boundary portion and the first electrode.Type: ApplicationFiled: September 7, 2021Publication date: October 13, 2022Inventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura
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Publication number: 20220301982Abstract: A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.Type: ApplicationFiled: September 10, 2021Publication date: September 22, 2022Inventors: Hiroko ITOKAZU, Tomoko MATSUDAI, Yoko IWAKAJI, Keiko KAWAMURA
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Publication number: 20220302288Abstract: This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.Type: ApplicationFiled: September 13, 2021Publication date: September 22, 2022Inventors: Norio YASUHARA, Yoko IWAKAJI, Yusuke KAWAGUCHI, Daiki YOSHIKAWA, Kenichi MATSUSHITA, Shoko HANAGATA, Tomoko MATSUDAI, Hiroko ITOKAZU, Keiko KAWAMURA
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Publication number: 20220293727Abstract: A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.Type: ApplicationFiled: July 26, 2021Publication date: September 15, 2022Inventors: Takeshi SUWA, Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU