Abstract: The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those.

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Abstract: The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those.

Abstract: A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.

Abstract: A Josephson junction apparatus comprises a polymeric film having flexibility, and a Josephson junction circuit formed on the polymeric film. The Josephson junction circuit includes a Josephson junction device and a wiring for connecting to the Josephson junction device. Namely, the Josephson junction apparatus has flexibility, and thus the Josephson junction apparatus can be placed not only on a flat surface but also it can be placed on a curved surface in practice. Furthermore, in the Josephson junction apparatus, when a functional polymeric film is used as a substrate of a Josephson junction of the Josephson junction device, a protective film is previously formed over the functional polymeric film, so that a wetting of the functional polymeric film, which is caused by water or organic solvents being used repeatedly during the manufacturing process, can be prevented and a dimensional stability of the film can be increased.

Abstract: A Josephson junction apparatus comprises a polymeric film having flexiblity, and a Josephson junction circuit formed on the polymeric film. The Josephson junction circuit includes a Josephson junction device and a wiring for connecting to the Josephson junction device. Namely, the Josephson junction apparatus has flexibility, and thus the Josephson junction apparatus can be placed not only on a flat surface but also it can be placed on a curved surface in practice. Furthermore, in the Josephson junction apparatus, when a functional polymeric film is used as a substrate of a Josephson junction of the Josephson junction device, a protective film is previously formed over the functional polymeric film, so that a wetting of the functional polymer film, which is caused by water or organic solvents being used used repeatedly during the manufacturing process, can be prevented and a dimensional stability of the film can be increased.