Patents by Inventor Hiromi HAYASAKA

Hiromi HAYASAKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170263786
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Application
    Filed: May 25, 2017
    Publication date: September 14, 2017
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Patent number: 9691910
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: June 27, 2017
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Masatoshi Shibata, Emi Kawashima, Koki Yano, Hiromi Hayasaka
  • Publication number: 20170141240
    Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
    Type: Application
    Filed: December 28, 2016
    Publication date: May 18, 2017
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Patent number: 9570631
    Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: February 14, 2017
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu Tomai, Masatoshi Shibata, Emi Kawashima, Koki Yano, Hiromi Hayasaka
  • Publication number: 20160211386
    Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.
    Type: Application
    Filed: August 8, 2014
    Publication date: July 21, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA
  • Publication number: 20160197202
    Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
    Type: Application
    Filed: August 8, 2014
    Publication date: July 7, 2016
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Shigekazu TOMAI, Masatoshi SHIBATA, Emi KAWASHIMA, Koki YANO, Hiromi HAYASAKA