Patents by Inventor Hiromi Nakai

Hiromi Nakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9725442
    Abstract: The present invention is related to a compound represented by formula (I), wherein X1, X2, X3, X4, X5, R5, R6, R7, R8, n, p, q, ring A and ring B are as described in the specification, or a pharmaceutically acceptable salt thereof.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: August 8, 2017
    Assignee: SHIONOGI & CO., LTD.
    Inventors: Kayoko Hata, Manami Masuda, Hiromi Nakai, Daisuke Taniyama, Hiroyuki Tobinaga, Yoshio Hato, Motohiro Fujiu
  • Publication number: 20140275074
    Abstract: The present invention is related to a compound represented by formula (I), wherein X1, X2, X3, X4, X5, R5, R6, R7, R8, n, p, q, ring A and ring B are as described in the specification, or a pharmaceutically acceptable salt thereof.
    Type: Application
    Filed: October 24, 2012
    Publication date: September 18, 2014
    Inventors: Kayoko Hata, Manami Masuda, Hiromi Nakai, Daisuke Taniyama, Hiroyuki Tobinaga, Yoshio Hato, Motohiro Fujiu
  • Patent number: 7256437
    Abstract: The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: August 14, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Publication number: 20050051821
    Abstract: The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
    Type: Application
    Filed: August 18, 2004
    Publication date: March 10, 2005
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Patent number: 6818523
    Abstract: A method for forming a semiconductor storage device includes steps of forming a memory cell transistor, forming a first plug connected to the memory cell transistor, forming a second plug of a hydrogen diffusion inhibiting layer, forming capacitor electrodes and a capacitor insulator between the capacitor electrodes and forming a hydrogen adsorption inhibiting layer.
    Type: Grant
    Filed: June 25, 2003
    Date of Patent: November 16, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Publication number: 20040063280
    Abstract: The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
    Type: Application
    Filed: June 25, 2003
    Publication date: April 1, 2004
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Patent number: 6635913
    Abstract: The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: October 21, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Publication number: 20020056862
    Abstract: The upper electrode of a capacitor is constituted of laminated films which respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
    Type: Application
    Filed: December 27, 2001
    Publication date: May 16, 2002
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Patent number: 6342712
    Abstract: The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
    Type: Grant
    Filed: August 13, 1999
    Date of Patent: January 29, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
  • Patent number: 5075806
    Abstract: The present invention relates to a tape recorder utilizing a cassette with a built-in endless micro tape.In the tape recorder of the present invention, a cassette retainer is provided in one half of the case, and cassette retaining side walls are provided in the other half of the case in such a manner as to become flush with the side walls of the cassette retainer, and a dust cover is formed in such a manner as to become flush with the bottom wall of the cassette retainer when the cassette is inserted.In addition, an ejecting lever is slidably mounted on one of the sides of the case, and the cassette retained in the cassette retainer is ejected from the case by the ejecting lever.Furthermore, a changeover switch is provided in such a manner as to be electrically connected with a head for reading recorded signals on the tracks, and reading of the recorded signals on a desired track can be achieved by changing over the changeover switch.
    Type: Grant
    Filed: October 17, 1988
    Date of Patent: December 24, 1991
    Assignee: Asahi Corporation
    Inventor: Hiromi Nakai
  • Patent number: 4817881
    Abstract: A microcassette tape comprising a tape housing including top and bottom case halves, a reel, a tape mounted on said reel, a rotating shaft for the tape reel, a pinch roller provided at the front of the tape housing, and a capstan between which the tape passes during endless revolutions of the tape. A guide is provided for preventing the tape from being misdirected and caught around the pinch roller and a wall is provided as a part of the tape housing for preventing the tape from slackening as it passes between the pinch roller and the capstan on a tangential path to the guide member which prevents the tape from being caught by the pinch roller. A further guide element is provided which prevents the tape from falling off the tape reel. A hole is provided in one of the halves of the tape housing which permits insertion of a shaft member for taking up any tape slack which develops in the passage of the tape from the tape reel to the pinch roller.
    Type: Grant
    Filed: June 29, 1987
    Date of Patent: April 4, 1989
    Assignee: Asahi Corporation
    Inventors: Hiromi Nakai, Masao Tsurumaki