Abstract: A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

Abstract: A liquid crystal display device provides, on the internal side of one substrate of a pair of substrates a plurality of pixel electrodes, a plurality of TFTs, a plurality of scan lines and signal lines, and a plurality of convex sections each formed on the internal side of the other substrate so as to be located substantially on a center part of each of the plurality of predetermined regions provided in each of the plurality of pixels. Further, the liquid crystal display device provides an opposing electrode on the internal side of the one substrate. Then, the liquid crystal display device provides vertical alignment films on the respective internal sides of the pair of substrates, and a liquid crystal layer having negative dielectric anisotropy and inserted in the gap between the pair of substrates.

Abstract: A display device includes a substrate having a display area; a plurality of scanning lines and a plurality of data lines, arranged in the display area over the substrate, wherein the data lines extend substantially orthogonally to the scanning lines; a plurality of switching elements each connected to respective one of the scanning lines and to respective one of the data lines; a plurality of pixel electrodes each connected to respective one of the switching elements; and a plurality of storage capacitance lines disposed substantially in parallel with the data lines, each of the storage capacitance lines having a portion overlapping with a portion of the pixel electrode, the storage capacitance lines being disposed on a plane on which the data lines are disposed and being made of the same material as the data lines.

Abstract: A resin composition comprises a polylactic acid resin (A) 75-10 wt %, an aromatic polycarbonate resin (B) 25-90 wt % and a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) 1-50 wt parts with respect to 100 wt parts of the total of the component (A) and the component (B).

Abstract: A resin composition in which a polylactic acid resin (A) 95-5 wt %, an aromatic polycarbonate resin (B) 5-95 wt %, and, with respect to 100 wt parts of the total of the (A) and the (B), at least one compatibilizer selected from a polymer compound containing an acrylic resin or styrene resin unit as a graft (C), a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) and an oxazoline compound, an oxazine compound and a carbodiimide compound (E) are compounded.

Abstract: A liquid crystal display device, includes: a gate line (14) provided as a first conductive layer to extend the gate line in a predetermined direction; a thin film transistor (13) including a gate electrode (13a) connected to the gate line (14); a first pixel electrode (12) provided as a second conductive layer closer to a liquid crystal layer (30) side than the first conductive layer; a shielding electrode (17) provided as a conductive layer to be closer to the liquid crystal layer side than the first conductive layer and provided in a region between a location region of the gate line (14) and a location region of the first pixel electrode (12); a connection portion (13j) provided to at least partially overlap the shielding electrode (17) and provided to be closer to the first conductive layer side than the shielding electrode (17), the connection portion connecting a source electrode (13h) of the thin film transistor (13) with the first pixel electrode (12); and a common electrode (23) which is opposing the

Abstract: A liquid crystal display device achieving high aperture rate and high definition is disclosed.

Abstract: A thin film transistor panel, including: a transparent substrate; scanning lines made of a transparent electroconductive material, formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data line, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover each of the thin film transistors.

Abstract: A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

Abstract: A liquid crystal display device with multiple pixels provided therein is disclosed comprising: a first sub-pixel provided for each of said pixels and including, a first liquid crystal capacitance formed with a liquid crystal sandwiched between a common electrode and a first pixel electrode, and a first auxiliary capacitance formed with a solid dielectric material sandwiched between said first pixel electrode and a first auxiliary capacitance electrode; a second sub-pixel disposed adjacent to said first sub-pixel for each of said pixels and including, a second liquid crystal capacitance formed with a liquid crystal sandwiched between said common electrode and a second pixel electrode, a second auxiliary capacitance formed with a solid dielectric material sandwiched between said second pixel electrode and a second auxiliary capacitance electrode, and a step-down capacitance formed with a solid dielectric material sandwiched between said second pixel electrode and a step-down capacitance electrode; a first volta

Abstract: A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.

Abstract: A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

Abstract: A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.

Abstract: In the present liquid crystal display device, a switching element, a data line connected to one end of the switching element, and an interconnecting wire insulated from the data line are formed on a substrate. The switching element, the data line, and the interconnecting wire are covered with an interlayer insulating film. An auxiliary capacitor electrode made of reflective metal and connected to the interconnecting wire is formed on the interlayer insulating film. An upper insulating film is formed on the interlayer insulating film to cover the auxiliary capacitor electrode, and a pixel electrode connected to the other end of the switching element is formed on the upper insulating film. The interconnecting wire is made of a material different from the auxiliary capacitor electrode, and the interlayer insulating film and upper insulating film have a contact hole which reaches the interconnecting wire.

Abstract: A display device includes a substrate, a plurality of scanning lines formed in parallel with each other on the substrate in one direction, a plurality of data lines formed in parallel with each other on the substrate in orthogonal to the scanning lines, a thin film transistor being formed in the vicinity of each intersection of the scanning lines and the data lines and having a semiconductor thin film, a gate electrode connected to one of the scanning lines, a source electrode, a drain electrode connected to one of the scanning lines; pixel electrodes each connected to the source electrode of the thin film transistor, auxiliary capacitive electrodes each having an overlap region that overlaps with the pixel electrodes and forming an auxiliary capacitance with the pixel electrodes, a first insulating film arranged between the auxiliary capacitive electrodes and the data lines, and a second insulting film arranged between the pixel electrodes and the auxiliary capacitive electrodes.

Abstract: A liquid crystal display device has: a substrate; a switching element disposed at a side of the upper surface of the substrate and including a lower electrode and an upper electrode having a stacked structure of a plurality of metallic layers; a transparent pixel electrode disposed at the side of the upper surface of the substrate and connected to the upper electrode of the switching element; and a reflective plate formed on the upper surface of the pixel electrode so as to expose a part of the pixel electrode and having the same stacked structure as the upper electrode, including layers each made of the same material as the corresponding metallic layer in the upper electrode.

Abstract: A liquid crystal display device is disclosed comprising a display part, a scanning line driving circuit, a signal line driving circuit, a counter electrode driving circuit for providing counter electrodes with a counter electrode driving signal reversed in phase from a signal line driving circuit, an auxiliary capacitance having one end connected to an output end of each of switching elements, and an auxiliary capacitance line driving circuit for driving a plurality of auxiliary capacitance lines arranged in rows and has ends of such auxiliary capacitances in each row commonly connected thereto, wherein the auxiliary capacitance line driving circuit is adapted to apply a first voltage to the auxiliary capacitance lines for a first half cycle of the counter electrode driving signal and apply a second voltage thereto for a (p+½)th cycle after the first period of the counter electrode driving signal where p is 0 or a natural number, said auxiliary capacitance line driving circuit making the auxiliary capacitance

Abstract: This invention provides a display panel characterized by having a substrate; an organic film having an irregular surface formed on the substrate; a reflective film formed on the irregular surface of the organic film; and a pixel electrode having a portion, at least the portion of the pixel electrode being overlapped with the reflective film.

Abstract: A display device includes a substrate having a display area; a plurality of scanning lines and a plurality of data lines, arranged in the display area over the substrate, wherein the data lines extend substantially orthogonally to the scanning lines; a plurality of switching elements each connected to respective one of the scanning lines and to respective one of the data lines; a plurality of pixel electrodes each connected to respective one of the switching elements; and a plurality of storage capacitance lines disposed substantially in parallel with the data lines, each of the storage capacitance lines having a portion overlapping with a portion of the pixel electrode, the storage capacitance lines being disposed on a plane on which the data lines are disposed and being made of the same material as the data lines.

Abstract: A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.