Abstract: A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.

Abstract: A deposition mask includes: a mask body having two or more first through-holes; and a support disposed on the mask body and having a second through-hole located at a position overlapped with the first through-holes in a plan view. The mask body has a first surface located on an opposite side of a side of the support, and a second surface located on the side of the support. An outermost circumference first through-hole, which is located on an outermost circumference in a plan view of the two or more first through-holes located at the position overlapped with the second through-hole in a plan view, includes a first point which is a center of the outermost circumference first through-hole in a plan view; the second through-hole includes a second point on an outline of the second through-hole, the second point being nearest to the first point.

Abstract: A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.

Abstract: A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.

Abstract: A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.

Abstract: A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.

Abstract: A deposition mask group includes a first deposition mask having two or more first through holes arranged along two different directions, a second deposition mask having two or more second through holes arranged along two different directions and a third deposition mask having two or more third through holes. The first through hole and the second through hole or the third through hole partly overlap when the first deposition mask, the second deposition mask and the third deposition mask are overlapped.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: A deposition mask includes: a mask body having two or more first through-holes; and a support disposed on the mask body and having a second through-hole located at a position overlapped with the first through-holes in a plan view. The mask body has a first surface located on an opposite side of a side of the support, and a second surface located on the side of the support. An outermost circumference first through-hole, which is located on an outermost circumference in a plan view of the two or more first through-holes located at the position overlapped with the second through-hole in a plan view, includes a first point which is a center of the outermost circumference first through-hole in a plan view; the second through-hole includes a second point on an outline of the second through-hole, the second point being nearest to the first point.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a method for producing a vapor deposition mask and a vapor deposition mask preparation body capable of simply producing the vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a plurality of slits 15 are provided and a resin mask 20 are stacked. Openings 25 required for composing a plurality of screens are provided in the resin mask 20. The openings 25 correspond to a pattern to be produced by vapor deposition. Each of the slits 15 is provided at a position of overlapping with an entirety of at least one screen.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.