Patents by Inventor Hiromitsu Ota

Hiromitsu Ota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6142635
    Abstract: An image to be projected is deformed to obtain a projected image having small distortion. An image deforming device constituted by an optical fiber bundle is arranged in front of an original of a projector arranged at a position other than the center of a dome, so that the image of the original is transmitted from an end face on the incident side of an image correction device to an end face on the emission side as images divided into pixels using optical fibers as units. A secondary image subjected to predetermined deformation is displayed on the end face on the emission side, and the secondary image is projected on a dome surface to obtain a projected image which is free from distortion by the same manner as that performed when the original is projected from the center of the dome onto the same projection surface.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: November 7, 2000
    Assignee: Kabushikigaisya Goto Kogaku Kenkyujyo
    Inventors: Makoto Kasahara, Hiromitsu Ota, Mitsugu Omori, Hiroaki In, Hidehiko Miyazaki
  • Patent number: 5928439
    Abstract: A transparent second electrode layer laminated over a laminated composite of a solar cell structure is connected to a third electrode layer disposed opposite the substrate via through holes spaced longitudinally and equidistantly apart from each other. The laminated composite and the third electrode layer are respectively segmented by separating grooves into regions involving through holes of a number inversely proportional to that of the series-connected solar cell units. A first electrode layer is connected to the third electrode layer via the through holes of the substrate or via conductors passing over the side thereof in the adjoining region across the separating grooves. The through holes for connected in the first electrode layer with the third electrode layer and the through holes for connecting the second electrode layer with the third electrode layer are formed and arranged equidistantly apart from each other, and the latter though holes which are not needed are removed.
    Type: Grant
    Filed: March 24, 1998
    Date of Patent: July 27, 1999
    Assignee: Fuji Electric Co. Ltd.
    Inventors: Hiromitsu Ota, Sugao Saito
  • Patent number: 5733381
    Abstract: A transparent second electrode layer laminated over a laminated composite of a solar cell structure is connected to a third electrode layer disposed opposite the substrate via through holes spaced longitudinally and equidistantly apart from each other. The laminated composite and the third electrode layer are respectively segmented by separating grooves into regions involving through holes of a number inversely proportional to that of the series-connected solar cell units. A first electrode layer is connected to the third electrode layer via the through holes of the substrate or via conductors passing over the side thereof in the adjoining region across the separating grooves. The through holes for connected in the first electrode layer with the third electrode layer and the through holes for connecting the second electrode layer with the third electrode layer are formed and arranged equidistantly apart from each other, and the latter through holes which are not needed are removed.
    Type: Grant
    Filed: June 11, 1996
    Date of Patent: March 31, 1998
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Hiromitsu Ota, Sugao Saito
  • Patent number: 5507881
    Abstract: Solar cells are formed of (a) a transparent substrate; (b) a transparent electrode; (c) a first doped layer comprising amorphous silicon oxide, optionally including nitrogen, said first doped layer containing a dopant whereby the first doped layer is of a first conductivity type and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.; (d) a layer of intrinsic amorphous silicon; (e) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type; and (f) a second electrode. The first doped layer may be of either n-type or p-type conductivity. The first doped layer can be formed over the transparent electrode by decomposing a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O or CO.sub.2, and a dopant, in a hydrogen carrier at a substrate temperature of 150.degree. to 250.
    Type: Grant
    Filed: March 16, 1994
    Date of Patent: April 16, 1996
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Porponth Sichanugrist, Shinji Fujikake, Hiromitsu Ota