Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.

Abstract: A lamp reflector (10a) includes a mirror surface (11) and a laminate (12a). The mirror surface (11) is a surface for reflecting light from a light source (30) to guide the light in a predetermined direction. The laminate (12a) covers at least a part of the mirror surface (11) to absorb an electromagnetic wave having a specific frequency of 20 GHz to 90 GHz. The laminate (12a) allows the light from the light source (30) to transmit therethrough toward the mirror surface (11).

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) is a layer that includes tin oxide or titanium oxide as a main component or a layer that is made of indium tin oxide including 40 weight % or more of tin oxide.

Abstract: A heater (1a) includes a support (10) made of an organic polymer and having a sheet shape, a heating element (20), and at least one pair of power supply electrodes (30) in contact with the heating element (20). The heating element (20) is a transparent conductive film made of a polycrystalline material containing indium oxide as a main component. In the heater (1a), the heating element (20) has a specific resistance of 1.4×10?4 ?·cm to 3×10?4 ?·cm. The heating element (20) has a thickness of more than 20 nm and not more than 100 nm.

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) has a sheet resistance of 200 to 600?/?. When the resistive layer (20) is subjected to an immersion treatment in which the resistive layer (20) is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer (20) before the immersion treatment and a sheet resistance of the resistive layer (20) after the immersion treatment is less than 100?/?.

Abstract: For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.

Abstract: An electromagnetic wave absorber (1a) includes a first layer (10) and an electrically conductive layer (20). The first layer (10) is a dielectric layer or a magnetic layer. The electrically conductive layer (20) is provided on at least one surface of the first layer. A product of a Young's modulus of the first layer (10) and a thickness of the first layer (10) is 0.1 to 1000 MPa · mm. The first layer (10) has a relative permittivity of 1 to 10.

Abstract: A heater member (1a) includes a support (10), a heating element (20), and at least one pair of power supply electrodes (30). The support (10) is made of an organic polymer and has a sheet shape. The heating element (20) is made of a polycrystalline material containing indium oxide as a main component and in contact with one principal surface of the support (10). The power supply electrodes (30) are in contact with one principal surface of the heating element (20). The heating element (20) has a sheet resistance in the range from 10 to 150 ?/sq. The heating element (20) has a thickness of more than 20 nm and not more than 200 nm. The internal stress of the heating element (20) as measured by an X-ray stress measurement method is 500 MPa or less.

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrical conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrical conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) includes indium oxide as a main component, has a polycrystalline structure, and has a sheet resistance of 260 to 500?/? and a specific resistance of 5×10?4 ?·cm or more.

Abstract: A lamp reflector (10a) includes a mirror surface (11) and a laminate (12a). The mirror surface (11) is a surface for reflecting light from a light source (30) to guide the light in a predetermined direction. The laminate (12a) covers at least a part of the mirror surface (11) to absorb an electromagnetic wave having a specific frequency of 20 GHz to 90 GHz. The laminate (12a) allows the light from the light source (30) to transmit therethrough toward the mirror surface (11).

Abstract: A heat-ray-reflective, light-transmissive base material is provided that includes a light-transmissive base material; a hard-coat layer disposed over one surface of the light-transmissive base material; and a transparent conductive oxide layer containing a transparent conductive oxide, disposed over the hard-coat layer.

Abstract: An electromagnetic wave absorber (1a) includes: a first layer (10a) being a dielectric layer or a magnetic layer; and a conductive layer (20a) provided on at least one surface of the first layer (10a). The conductive layer (20a) has a sheet resistance of 100?/? or less after the electromagnetic wave absorber (1a) is exposed to an environment having a temperature of 85° C. and a relative humidity of 85% for 1000 hours. The electromagnetic wave absorber (1a) has a flexural rigidity of 7000 MPa·mm4 or less.

Abstract: An electromagnetic wave absorber (1a) includes: a first layer (10a) being a dielectric layer or a magnetic layer; and a conductive layer (20a) provided on at least one surface of the first layer (10a). The conductive layer (20a) has a sheet resistance of 100?/? or less after the electromagnetic wave absorber (1a) is exposed to an environment having a temperature of 85° C. and a relative humidity of 85% for 1000 hours. The electromagnetic wave absorber (1a) has a flexural rigidity of 7000 MPa·mm4 or less.

Abstract: Provided is an electromagnetic wave transmissive metal member capable of being easily produced at a low production cost, with both a metallic luster and an electromagnetic wave transmissibility, an article using the electromagnetic wave transmissive metal member, and a production method for an electromagnetic wave transmissive metal film. The electromagnetic wave transmissive metal member comprises a metal layer and a crack layer, wherein the metal layer and the crack layer have, in their respective planes, a plurality of linear cracks extending substantially parallel to each other. The linear cracks in the metal layer and the linear cracks in the crack layer penetrate through their respective layers in a thickness direction, and are continuous with each other in the thickness direction.

Abstract: A metallic lustrous member with electromagnetic wave transmissibility, which is capable of being easily produced even when using not only chromium (Cr) or indium (In) but also any of some other metals such as aluminum (Al), as a material for a metal layer thereof. A metallic lustrous member with electromagnetic wave transmissibility, which is capable of using silver (Ag), zinc (Zn), lead (Pb) or copper (Cu), or an alloy thereof, as a material for a metal layer thereof, in addition to aluminum (Al). The metallic lustrous member with electromagnetic wave transmissibility, comprises an indium oxide-containing layer provided along a surface of a substrate, and a metal layer laminated on the indium oxide-containing layer, wherein the metal layer includes, in at least part thereof, a plurality of portions which are in a discontinuous state.

Abstract: A transparent conductive film includes a crystalline transparent conductive layer obtained by forming an amorphous transparent conductive layer on a polymeric film substrate by sputtering, and crystallizing the amorphous transparent conductive layer. Defining that the amorphous transparent conductive layer has a carrier density represented by na×1019 and Hall mobility represented by ?a, that the crystalline transparent conductive layer has a carrier density represented by nc×1019 and Hall mobility represented by ?c, and that a length of motion L is represented by {(nc?na)2+(?c??a)}1/2, the amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10?60)×1019/cm3 and Hall mobility ?a of 10-25 cm2/V·s, and the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80?150)×1019/cm3 and Hall mobility ?c of 20-40 cm2/V·s, and the length of motion L is 50-150.

Abstract: There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10?4 ?·cm or more and 2.8×10?4 ?·cm or less.

Abstract: For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.

Abstract: For the purpose of providing an electromagnetic wave absorber usable for radar having a high revolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.