Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.

Abstract: A radio wave absorber 1a includes a resistive layer 10, a reflector 30, and a dielectric layer 20. The resistive layer 10 includes multilayer carbon nanotubes 11. Moreover, the resistive layer 10 has a specific resistance of 1.5 ?·cm or less. The reflector 30 reflects a radio wave. The dielectric layer 20 is disposed between the resistive layer and the reflector in a thickness direction of the resistive layer 10.

Abstract: A radio wave absorber (1a) includes a resistive layer (20), an electrical conductor (30), and a dielectric layer (10). The resistive layer (20) includes indium tin oxide as a main component. The electrical conductor (30) reflects a radio wave. The dielectric layer (10) is disposed between the resistive layer (20) and the electrical conductor (30) in the thickness direction of the resistive layer (20). The dielectric layer (10) is formed of a polymer. The content of tin oxide in the indium tin oxide included in the resistive layer (20) is more than 0 weight % and less than 20 weight %. The number of hydrogen atoms included in the resistive layer (20) is 5% or more of the total number of indium atoms, tin atoms, oxygen atoms, and hydrogen atoms included in the resistive layer (20).

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) has a sheet resistance of 200 to 600 ?/?. When the resistive layer (20) is subjected to an immersion treatment in which the resistive layer (20) is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer (20) before the immersion treatment and a sheet resistance of the resistive layer (20) after the immersion treatment is less than 100 ?/?.

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) has a sheet resistance of 200 to 600?/?. When the resistive layer (20) is subjected to an immersion treatment in which the resistive layer (20) is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer (20) before the immersion treatment and a sheet resistance of the resistive layer (20) after the immersion treatment is less than 100?/?.

Abstract: A heater (1a) includes a support (10) made of an organic polymer and having a sheet shape, a heating element (20), and at least one pair of power supply electrodes (30) in contact with the heating element (20). The heating element (20) is a transparent conductive film made of a polycrystalline material containing indium oxide as a main component. In the heater (1a), the heating element (20) has a specific resistance of 1.4×10?4 ?·cm to 3×10?4 ?·cm. The heating element (20) has a thickness of more than 20 nm and not more than 100 nm.

Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

Abstract: An impedance matching film 10a has a plurality of openings 11. The plurality of openings 11 are formed at equal intervals in a specific direction along main surfaces 10f of the impedance matching film 10a. The impedance matching film 10a has a sheet resistance of 300 to 700?/?. A size G of each opening 11 in the specific direction is 50 ?m or more and 1000 ?m or less. In the impedance matching film 10a, a cross-sectional resistance value Rs is 1M?/m or more. The cross-sectional resistance value Rs is determined by dividing a specific resistance of a material forming the impedance matching film 10a by a product of a thickness of the impedance matching film 10a and a distance between the nearest openings 11.

Abstract: A radio wave absorber includes a resistive layer, an electroconductive layer, and a dielectric layer. The resistive layer has a first main surface with a plurality of first openings formed at equal intervals. The electroconductive layer has a second main surface with a plurality of second openings formed at equal intervals. The dielectric layer is disposed between the resistive layer and the electroconductive layer. In the radio wave absorber, a value obtained by dividing a larger value out of a first ratio and a second ratio by a smaller value out of the first ratio and the second ratio is 1.3 or more. The first ratio is a ratio (GR/WR) of a size GR of the first opening to a distance WR between the first openings. The second ratio is a ratio (GC/WC) of a size GC of the second opening to a distance WC between the second openings.

Abstract: The present invention relates to an electromagnetically transparent metallic-luster member including a base and a metal layer formed over the base, wherein the metal layer includes a plurality of portions which are at least partly discontinuous and separate from each other, the metal layer includes a portion including aluminum element and a portion including indium element, the portion including indium element localizes in the metal layer, and a volume content (vol %) of the portion including indium element in the metal layer is 5-40 vol %.

Abstract: An impedance matching film 10 includes a plurality of domains 11. Each of the domains 11 has a plurality of openings 12 having different shapes. The pluralities of openings 12 are periodically arranged in a specific direction along main surfaces 10f of the impedance matching film 10. Each of sizes of the domains 11 in the specific direction is 50 ?m or more.

Abstract: A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.

Abstract: A multilayer structure and a piezoelectric device using the same, which have satisfactory crystal orientation even in the submicron region of the thickness of a piezoelectric layer, are provided. The multilayer structure includes a first wurtzite thin film, a first hexagonal metal layer, a first electrode layer, a second hexagonal metal layer, and a second wurtzite thin film stacked in this order. The first electrode layer is formed of a metallic material having an acoustic impedance higher than that of the second wurtzite thin film.

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) is a layer that includes tin oxide or titanium oxide as a main component or a layer that is made of indium tin oxide including 40 weight % or more of tin oxide.

Abstract: A heater member (1a) includes a support (10), a heating element (20), and at least one pair of power supply electrodes (30). The support (10) is made of an organic polymer and has a sheet shape. The heating element (20) is made of a polycrystalline material containing indium oxide as a main component and in contact with one principal surface of the support (10). The power supply electrodes (30) are in contact with one principal surface of the heating element (20). The heating element (20) has a sheet resistance in the range from 10 to 150 ?/sq. The heating element (20) has a thickness of more than 20 nm and not more than 200 nm. The internal stress of the heating element (20) as measured by an X-ray stress measurement method is 500 MPa or less.

Abstract: A metallic lustrous member with radio wave transmissibility is provided, which is capable of being easily produced, while ensuring a structure in which not only chromium or indium but also any of some other metals such as aluminum is formed as a metal layer on a continuous surface of any of various materials, and also an article using the member is provided. A production method for a metallic lustrous member with radio wave transmissibility, which is capable of easily forming, as a metal layer, not only chromium or indium but also any of some other metals such as aluminum, on a continuous surface of any of various materials. The metallic lustrous member comprises a substrate having radio wave transmissibility, and an aluminum layer formed directly on a continuous surface of the substrate. The aluminum layer has a discontinuous region including a plurality of separated segments which are mutually discontinuous.

Abstract: A transparent conductive film (3) includes a polycrystal (31). The polycrystal (31) has grains (32). The grains (32) have an average value Df of a maximum Feret diameter of 160 to 400 nm.

Abstract: An impedance matching film 10a includes a plurality of openings 11 regularly arranged along a principal surface 10f of the impedance matching film 10a. In the impedance matching film 10a, a value ?/t obtained by dividing a specific resistance ? of a material of the impedance matching film 10a by a thickness t of the impedance matching film 10a is 1 to 300 ?/?.

Abstract: An electromagnetic wave absorber (1a) includes a first layer (10) and an electrically conductive layer (20). The first layer (10) is a dielectric layer or a magnetic layer. The electrically conductive layer (20) is provided on at least one surface of the first layer. A product of a Young's modulus of the first layer (10) and a thickness of the first layer (10) is 0.1 to 1000 MPa·mm. The first layer (10) has a relative permittivity of 1 to 10.

Abstract: A metallic lustrous member with electromagnetic wave transmissibility, which is capable of being easily produced even when using not only chromium (Cr) or indium (In) but also any of some other metals such as aluminum (Al), as a material for a metal layer thereof. A metallic lustrous member with electromagnetic wave transmissibility, which is capable of using silver (Ag), zinc (Zn), lead (Pb) or copper (Cu), or an alloy thereof, as a material for a metal layer thereof, in addition to aluminum (Al). The metallic lustrous member with electromagnetic wave transmissibility, comprises an indium oxide-containing layer provided along a surface of a substrate, and a metal layer laminated on the indium oxide-containing layer, wherein the metal layer includes, in at least part thereof, a plurality of portions which are in a discontinuous state.