Abstract: The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an ?-Fe phase and a Nd2Fe14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.

Abstract: A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 ?Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.

Abstract: Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a Nd—Fe—B base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an ?-Fe phase and Nd2Fe14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

Abstract: A rare-earth thin film magnet is provided which includes Nd, Fe and B as essential components, characterized by including a Si substrate having an oxide film present on a surface thereof, a Nd base film formed as a first layer over the Si substrate, and a Nd—Fe—B film formed as a second layer on the first layer. The rare earth thin film magnet and a production process therefor provides a rare earth thin film magnet suffering neither film separation nor substrate breakage and having satisfactory magnetic properties even when the second layer has composition in the range of 0.120 5 Nd/(Nd+Fe)<0.150, which corresponds to a compositional range in the vicinity of a stoichiometric composition.

Abstract: A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 ?m or less, the Nd content satisfies the conditional expression of 0.15?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 ?m to 115 ?m (but excluding 70 ?m), the Nd content satisfies the conditional expression of 0.18?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 ?m to 160 ?m (but excluding 115 ?m), the Nd content satisfies the conditional expression of 0.20?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 ?m and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

Abstract: Provided is a rare earth thin film magnet having Nd, Fe and B as essential components, which is characterized in that a Nd—Fe—B base film is formed on a Si substrate having an oxide film formed on a surface thereof and has a composition in which the Nd content is higher than that of a stoichiometric composition and that a film (nano composite film) is formed on the base film and has a texture in which an ?-Fe phase and Nd2Fe14B are alternately arranged and three-dimensionally dispersed. The rare earth thin film magnet provided is less susceptible to the occurrence of film separation and substrate breakage and exhibits favorable magnetic properties.

Abstract: A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 ?m or less, the Nd content satisfies the conditional expression of 0.15?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 ?m to 115 ?m (but excluding 70 ?m), the Nd content satisfies the conditional expression of 0.18?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 ?m to 160 ?m (but excluding 115 ?m), the Nd content satisfies the conditional expression of 0.20?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 ?m and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

Abstract: The present invention provides a rare earth thin film magnet having Nd, Fe, and B as essential components, wherein the rare earth thin film magnet has a texture in which an ?-Fe phase and a Nd2Fe14B phase are alternately arranged three-dimensionally, and each phase has an average crystal grain size of 10 to 30 nm. An object of this invention is to provide a rare earth thin film magnet having superior mass productivity and reproducibility and favorable magnetic properties, as well as to provide the production method thereof and a target for producing the thin film.

Abstract: The present invention relates to a rare-earth magnetic target comprising neodymium, iron, and boron as essential components. The target has an average crystal grain diameter of 10 to 200 ?m. It is an object of the present invention to provide a sintered compact target that can form rare-earth magnetic thin films, in particular, neodymium magnetic thin films, having good magnetic characteristics with excellent mass productivity and reproducibility, and provide a method of producing the sintered compact target.

Abstract: A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.