Patents by Inventor Hironobu Takahashi
Hironobu Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120156781Abstract: Provided is a temperature-responsive cell culture substrate. A non-crosslinked temperature-responsive polymer having a molecular weight between 10,000 and 150,000 is immobilized on the substrate surface with a density of 0.02 to 0.3 molecular chain per square nanometer. Using the provided temperature-responsive cell culture substrate, cells obtained from various tissues can be efficiently cultured. This culturing method makes it possible to efficiently peel off a cell sheet by just changing the temperature, without causing damage.Type: ApplicationFiled: August 27, 2010Publication date: June 21, 2012Inventors: Hironobu Takahashi, Masamichi Nakayama, Teruo Okano
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Patent number: 8192545Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: GrantFiled: June 7, 2011Date of Patent: June 5, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
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Publication number: 20120086006Abstract: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.Type: ApplicationFiled: October 12, 2011Publication date: April 12, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi
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Publication number: 20110310307Abstract: A television set that transmits in a format based on a serial communication standard for digitally transferring audio, audio data to a speaker device with a built-in amplifier. The television set includes a control code transmission unit that, when an operation tool for effecting a predetermined function of the television set is operated on a remote controller, transmits in the format based on the serial communication standard, a control code corresponding to the predetermined function to the speaker device with the built-in amplifier.Type: ApplicationFiled: June 13, 2011Publication date: December 22, 2011Inventor: Hironobu TAKAHASHI
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Patent number: 8053816Abstract: It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device.Type: GrantFiled: March 2, 2007Date of Patent: November 8, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi
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Publication number: 20110232571Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: ApplicationFiled: June 7, 2011Publication date: September 29, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yoshikazu HIURA, Hiroki ADACHI, Hironobu TAKAHASHI, Yuusuke SUGAWARA, Tatsuya ARAO, Kazuo NISHI, Yasuyuki ARAI
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Patent number: 8018695Abstract: A control apparatus for controlling a fuel pump includes: an electronic switch provided in a circuit for connecting a power supply to a motor for driving the fuel pump; a current detector which detects a current which flows through the motor; and a controller which controls the electronic switch in a first PWM mode of a first frequency and a first duty ratio in a normal operation; and change a PWM mode to control the electronic switch in a second PWM mode of a second frequency lower than the first frequency and a second duty ratio lower than the first duty ratio when the current flowing through the motor exceeds a threshold current value in the normal operation.Type: GrantFiled: March 5, 2009Date of Patent: September 13, 2011Assignee: Yazaki CorporationInventors: Akira Serizawa, Hiroo Yabe, Sadafumi Ikeda, Kouji Manabe, Akira Teranishi, Hironobu Takahashi
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Patent number: 7985664Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: GrantFiled: November 30, 2009Date of Patent: July 26, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
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Patent number: 7936037Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.Type: GrantFiled: January 16, 2009Date of Patent: May 3, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
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Publication number: 20110073981Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.Type: ApplicationFiled: December 10, 2010Publication date: March 31, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kazuo NISHI, Hiroki ADACHI, Junya MARUYAMA, Naoto KUSUMOTO, Yuusuke SUGAWARA, Tomoyuki AOKI, Eiji SUGIYAMA, Hironobu TAKAHASHI
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Patent number: 7851278Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.Type: GrantFiled: December 14, 2007Date of Patent: December 14, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
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Publication number: 20100075455Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: ApplicationFiled: November 30, 2009Publication date: March 25, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yoshikazu HIURA, Hiroki ADACHI, Hironobu TAKAHASHI, Yuusuke SUGAWARA, Tatsuya ARAO, Kazuo NISHI, Yasuyuki ARAI
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Patent number: 7666766Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.Type: GrantFiled: September 25, 2006Date of Patent: February 23, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
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Publication number: 20090224714Abstract: A control apparatus for controlling a fuel pump includes: an electronic switch provided in a circuit for connecting a power supply to a motor for driving the fuel pump; a current detector which detects a current which flows through the motor; and a controller which controls the electronic switch in a first PWM mode of a first frequency and a first duty ratio in a normal operation; and change a PWM mode to control the electronic switch in a second PWM mode of a second frequency lower than the first frequency and a second duty ratio lower than the first duty ratio when the current flowing through the motor exceeds a threshold current value in the normal operation.Type: ApplicationFiled: March 5, 2009Publication date: September 10, 2009Applicant: YAZAKI CORPORATIONInventors: Akira SERIZAWA, Hiroo Yabe, Sadafumi Ikeda, Kouji Manabe, Akira Teranishi, Hironobu Takahashi
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Publication number: 20090126790Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.Type: ApplicationFiled: January 16, 2009Publication date: May 21, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
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Patent number: 7492028Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.Type: GrantFiled: February 10, 2006Date of Patent: February 17, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
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Patent number: 7483348Abstract: A video/audio data is recorded in a first storage region of a first recording medium. The video/audio data is decoded and converted into the video/audio data with a prescribed bit rate. The video/audio data is encoded in a format of a second recording medium and recorded in a second region of the first recording medium. The video/audio data recorded in the second storage is copied onto the second recording medium. The saving priority of the video/audio data recorded in the first and the second storage region is evaluated. When shortage in the empty capacity of each of the first and the second storage region of the first recording medium is detected, the video/audio data with a lower saving priority is cancelled.Type: GrantFiled: March 10, 2005Date of Patent: January 27, 2009Assignee: Funai Electric Co., Ltd.Inventor: Hironobu Takahashi
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Patent number: 7373002Abstract: The present invention provides an image processing apparatus that records currently displayed video onto an external medium as a still image. A JPEG file includes compressed data and auxiliary Exif information, and the auxiliary information includes a user information tag that can be used by a user. When a TV set records a still image according to JPEG, product model information about the TV set is written in the user information tag. Since TV sets have variations in the number of displayed pixels and the optimum image signal processing method from one product model to another, the TV set refers to the Exif information when playing back the JPEG file. If the Exif information includes product model information about the TV set, the JPEG file is subjected to the optimum signal processing based on the product model information, and is then displayed.Type: GrantFiled: December 1, 2004Date of Patent: May 13, 2008Assignee: Sony CorporationInventor: Hironobu Takahashi
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Publication number: 20080108205Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.Type: ApplicationFiled: December 14, 2007Publication date: May 8, 2008Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
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Patent number: 7335951Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.Type: GrantFiled: October 5, 2004Date of Patent: February 26, 2008Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi