Abstract: In a sealing structure that seals a gap between a pressed wall and a pressing wall with a sealing member, the pressed wall and the pressing wall are coupled to each other in an orthogonal direction that is orthogonal to an opposing direction in which the pressed wall and the pressing wall are opposed toward each other so that the sealing member is kept in a state held between the pressed wall and the pressing wall. The sealing member includes a first inclined surface inclined relative to the orthogonal direction. The first inclined surface is pressed by the pressing wall in the orthogonal direction so that the sealing member is pressed at least in the opposing direction.

Abstract: A current collapse characteristic is sufficiently suppressed. After forming a large opening (first opening) passing through both a TEOS oxide layer 42 and an oxide layer 41, a thin oxide layer (third insulating layer) 43 is formed entirely covering the layers 41 and 42 and the first opening. In the thin oxide layer 43 inside the first opening, a second opening for exposing a group-III nitride semiconductor layer 10 is provided. A gate electrode 50 is formed at a slanted portion of the first opening including the second opening. A taper angle of the first opening is smaller in the TEOS oxide layer 42 than in the oxide layer 41.

Abstract: Provided is a low cost semiconductor device in which occurrence of chipping and a crack during dicing is suppressed. A nitride layer (silicon nitride layer) 23 is formed on an oxide layer 22. In FIG. 1, a thick organic layer 24 is formed as a top layer. The semiconductor device 1 is characterized by its structure on a side of its end portion. In FIG. 1, the end portion E of the semiconductor device 1 is formed by cutting with a blade in the vertical direction during dicing. An edge E1 of both the oxide layer 22 and the nitride layer is located apart from an edge of a semiconductor substrate 10. An edge E2 of the organic layer 24 on the nitride layer 23 is located inside the edge E1 of the nitride layer 23 (on a side more distant from the edge E).

Abstract: A current collapse characteristic is sufficiently suppressed. After forming a large opening (first opening) passing through both of a TEOS oxide layer 42 and an oxide layer 41, a thin oxide layer (third insulating layer) 43 entirely covering the layers and the opening. In the oxide layer 43 inside the first opening, an opening (second opening) for exposing a group-III nitride semiconductor layer 10 is provided. A gate electrode 50 is formed at a slanted portion of the first opening including the second opening. A taper angle of the opening is smaller in the TEOS oxide layer 42 than in the oxide layer 41.

Abstract: Provided is a low cost semiconductor device in which occurrence of chipping and a crack during dicing is suppressed. A nitride layer (silicon nitride layer) 23 is formed on an oxide layer 22. In FIG. 1, a thick organic layer 24 is formed as a top layer. The semiconductor device 1 is characterized by its structure on a side of its end portion. In FIG. 1, the end portion E of the semiconductor device 1 is formed by cutting with a blade in the vertical direction during dicing. An edge E1 of both the oxide layer 22 and the nitride layer is located apart from an edge of a semiconductor substrate 10. An edge E2 of the organic layer 24 on the nitride layer 23 is located inside the edge E1 of the nitride layer 23 (on a side more distant from the edge E).

Abstract: In a sealing structure that seals a gap between a pressed wall and a pressing wall with a sealing member, the pressed wall and the pressing wall are coupled to each other in an orthogonal direction that is orthogonal to an opposing direction in which the pressed wall and the pressing wall are opposed toward each other so that the sealing member is kept in a state held between the pressed wall and the pressing wall. The sealing member includes a first inclined surface inclined relative to the orthogonal direction. The first inclined surface is pressed by the pressing wall in the orthogonal direction so that the sealing member is pressed at least in the opposing direction.

Abstract: A method of manufacturing an evaporator of an air conditioner includes applying a coating agent to an outer surface of a heat transfer pipe to form a rust preventive film, wherein the coating agent includes a metal working oil and 0.1 to 1.0% by weight of a benzotriazole-based compound having a structure represented by the following formula (I) (wherein R1 to R4 each independently represent hydrogen or a methyl group, and R5 represents an aliphatic hydrocarbon group having 1 to 18 carbon atoms or (CH2)n—N—R6-R7, n being an integer of 1 to 3, R6 and R7 being each independently an aliphatic hydrocarbon group having 1 to 18 carbon atoms), inserting the heat transfer pipe having the rust preventive film formed thereon into a hole of a heat transfer fin, and expanding the heat transfer pipe inserted the heat transfer fin.

Abstract: Nitride semiconductor devices having interdigitated array source and drain electrodes arranged like crossed fingers are described. The electric fields extended at the tips of the array electrodes are relaxed. Desirably, the rounded source electrode tip ends have a larger effective diameter than the rounded tip ends of the drain electrodes. Devices constructed accordingly have higher withstand voltages.

Abstract: Semiconductor devices and methods are described wherein temperature dependence of leakage current in at least one pathway of a device is compensated by a resistor in the device. Control of temperature dependent leakage current is particularly useful for silicon nitride devices and for circuits such as cascode circuits. A semiconductor leakage current that increases with temperature may be compensated by a fabricated resistor such as a boron doped polysilicon resistor that is electrically connected to compensate the leakage current in the pathway.

Abstract: The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device 10, an electron supply layer 12 is formed on a channel layer 11. A two-dimensional electron gas (2DEG) layer 13 is formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layer 13 between a source electrode 14 formed on the surface of the electron supply layer 12 and a drain electrode 15 that is formed on the same surface. A potential detection electrode 17 is arranged on the electron supply layer 12 between the gate electrode 16 and the source electrode 14. A resistor 18 having a sufficiently high resistance value makes the electric current flowing to the potential detection electrode 17 negligible relative to the drain current in operation.

Abstract: A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof. The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode.

Abstract: A filter for an electric dust collector includes: a conductive filter frame for surrounding a passage of airflow along a transverse plane that traverses the passage by being supported by a casing of the electric duct collector; and a mesh sheet arranged along the transverse plane, coupled to the filter frame, and having a conductive material at least partially on a surface of the mesh sheet, the conductive material being connected to the filter frame.

Abstract: A semiconductor device is free from degradation of characteristics attributable to a manufacturing process thereof and its characteristics are hardly affected by changes in electric potentials of bonding pads. The semiconductor device 10 includes an active region 12, a first insulating layer 13 covering the active region 12, a floating conductor 14 formed on the first insulating layer 13, a second insulating layer 15 formed on the first insulating layer 13 and the floating conductor 14, a bonding pad 18 formed on the second insulating layer 17 and interconnection vias 19, 20 for electrically connecting the active region 12 and the bonding pad 18.

Abstract: The file storage system of the present invention comprises a first server including a first file system (FS), and a second server including a second FS. The first and second servers respectively store first and second difference management tables. Upon receiving a write request, the first server stores a difference of a first file in the first FS, updates the first difference management table, and sends, to the second server, a difference storage notification showing that the difference of the first file has been stored in the first FS. The second server receives the difference storage notification, and updates the second difference management table.

Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer between the gate electrode and the drain electrode. Channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode is set higher than channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode.

Abstract: A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof. The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode.

Abstract: The file storage system of the present invention comprises a first server including a first file system (FS), and a second server including a second FS. The first and second servers respectively store first and second difference management tables. Upon receiving a write request, the first server stores a difference of a first file in the first FS, updates the first difference management table, and sends, to the second server, a difference storage notification showing that the difference of the first file has been stored in the first FS. The second server receives the difference storage notification, and updates the second difference management table.

Abstract: A gate driver for driving a gate of a switching element Tr7 includes a driving part that drives the switching element according to a control signal and an active clamp circuit to clamp the voltage between the first and second main terminals of the switching element through the driving part. If a voltage applied between a first main terminal (drain) and a second main terminal (source) of the switching element exceeds a predetermined voltage, the active clamp circuit forcibly blocks a driving operation of the driving part from driving the switching element.

Abstract: A compound semiconductor device includes a group-III nitride semiconductor layer; an insulation film located on the group-III nitride semiconductor layer; a drain electrode located in a position which is a first distance away from an upper surface of the group-III nitride semiconductor layer; a source electrode located in a position which is the first distance away from the upper surface of the group-III nitride semiconductor layer; a gate electrode located between the drain electrode and the source electrode; and a field plate electrode located between the drain electrode and the gate electrode at a position which is a second distance away from the upper surface of the group-III nitride semiconductor layer, the second distance is shorter than the first distance.

Abstract: A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode.