Patents by Inventor Hironori Nagasaki

Hironori Nagasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210280483
    Abstract: A power semiconductor apparatus includes a power semiconductor element having low and high potential side electrodes and a sense electrode, high and low potential side conductors electrically connected with the high potential side electrodes, respectively, a sense wiring electrically connected with the sense electrode, and a first metal portion facing the low potential side conductor or the low potential side conductor across the sense wiring. When viewed from an array direction of the sense wiring and the first metal portion, the sense wiring has a facing portion facing the high or low potential side conductor, the first metal portion forms a recess in a part overlapping the facing portion, and a depth of the recess is formed such that a distance between a bottom of the recess and the sense wiring is larger than a distance between the sense wiring and the high or low potential side conductor.
    Type: Application
    Filed: July 11, 2019
    Publication date: September 9, 2021
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Hironori NAGASAKI, Shintaro TANAKA, Takashi HIRAO
  • Publication number: 20190066897
    Abstract: A coil part includes two coils, two first molded bodies, and a second molded body. The two first molded bodies serving as electrical insulation individually cover the two coils. The second molded body serving as electrical insulation integrally covers the two first molded bodies. The second molded body has a modulus of elasticity lower than a modulus of elasticity of each of the two first molded bodies.
    Type: Application
    Filed: March 9, 2017
    Publication date: February 28, 2019
    Inventors: Junichi KOTANI, Toshiyuki ASAHI, Nobuya MATSUTANI, Hironori NAGASAKI
  • Patent number: 9000664
    Abstract: Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles each of which is a ?-type SiAlON represented by a general formula: EuaSibAlcOdNe, where 0.005?a?0.4, b+c=12, d+e=16, wherein a mean value of a value obtained by dividing a longer particle diameter by a shorter particle diameter is not greater than 1.75. Also provided are a light emitting apparatus using the phosphor particle group in a light converter, and a liquid crystal display television using the light emitting apparatus. With these, a high-efficiency and stable light emitting apparatus using a ?-type SiAlON, and a phosphor particle group therefor are provided.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: April 7, 2015
    Assignees: Sharp Kabushiki Kaisha, Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Tetsuya Hanamoto, Masatsugu Masuda, Kenji Terashima, Hideyuki Emoto, Hironori Nagasaki
  • Patent number: 8709282
    Abstract: Provided is a production method of a ?-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a ?-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a ?-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: April 29, 2014
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Masayoshi Ichikawa, Hironori Nagasaki
  • Publication number: 20120305844
    Abstract: The present invention provides a ?-SiAlON phosphor that contains a ?-SiAlON represented by a general formula Si6-zAlzOzN8-z (0<z<4.2) as a matrix and Eu2+ in a form of a solid solution as an emission center, and exhibits a peak within a wavelength range from 520 to 560 nm when excited by blue light. The average diffuse reflectance of this ?-SiAlON phosphor in the wavelength range from 700 to 800 nm is 90% or higher, and the diffuse reflectance in the fluorescent peak wavelength is 85% or higher.
    Type: Application
    Filed: February 19, 2011
    Publication date: December 6, 2012
    Inventors: Hideyuki Emoto, Hironori Nagasaki
  • Publication number: 20120211700
    Abstract: Provided is a production method of a ?-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a ?-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a ?-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.
    Type: Application
    Filed: October 27, 2010
    Publication date: August 23, 2012
    Inventors: Masayoshi Ichikawa, Hironori Nagasaki
  • Publication number: 20120026426
    Abstract: Provided is a phosphor particle group of divalent europium-activated oxynitride green light emitting phosphor particles (1) each of which is a ?-type SiAlON represented by a general formula: EuaSibAlcOdNe, where 0.005?a?0.4, b+c=12, d+e=16, wherein a mean value of a value obtained by dividing a longer particle diameter by a shorter particle diameter is not greater than 1.75. Also provided are a light emitting apparatus (11) using the phosphor particle group in a light converter (13), and a liquid crystal display television using the light emitting apparatus (11). With these, a high-efficiency and stable light emitting apparatus using a ?-type SiAlON, and a phosphor particle group therefor are provided.
    Type: Application
    Filed: April 2, 2010
    Publication date: February 2, 2012
    Applicants: Denki Kagaku Kogyo Kabushiki Kaisha, Sharp Kabushiki Kaisha
    Inventors: Tetsuya Hanamoto, Masatsugu Masuda, Kenji Terashima, Hideyuki Emoto, Hironori Nagasaki
  • Publication number: 20110180933
    Abstract: A wiring layer is formed on a substrate, and a semiconductor device is mounted on the substrate. The wiring layer and the semiconductor device are sealed by a sealing resin. A conductive member is used to fill a through hole formed in the sealing resin in a predetermined position of the wiring layer and is provided so as to cover over the sealing resin. The metal foil is provided on the upper surface of the conductive member, and the metal foil and the wiring layer are electrically connected via the conductive member.
    Type: Application
    Filed: May 29, 2009
    Publication date: July 28, 2011
    Inventors: Yasunori Inoue, Hideki Mizuhara, Ryosuke Usui, Kenichi Ezaki, Hironori Nagasaki, Mayumi Nakasato
  • Publication number: 20110001582
    Abstract: A micro-electromechanical device of the present invention includes a resonator and an electrode facing each other, a pair of thermal oxide film formed on the surfaces of the resonator and electrode facing each other and a narrow gap provided between the thermal oxide films. A process for fabricating a micro-electromechanical device includes a step of processing an Si layer to be the resonator and the electrode by using photolithography and etching to form a groove to be a gap, and a step of performing thermal oxidation on the Si layer to form a pair of thermal oxide films of Si on the opposite surfaces of the groove.
    Type: Application
    Filed: February 9, 2009
    Publication date: January 6, 2011
    Applicant: Sanyo Electric Co., Ltd.
    Inventor: Hironori Nagasaki