Patents by Inventor Hironori Nishino

Hironori Nishino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200292391
    Abstract: An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.
    Type: Application
    Filed: January 31, 2020
    Publication date: September 17, 2020
    Applicant: FUJITSU LIMITED
    Inventors: RYO SUZUKI, Hironori Nishino, Koji Tsunoda
  • Publication number: 20200152817
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers and spacer layers that are alternately stacked, light passing through each of the spacer layers, the spacer layers being made of insulating material; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode being different from a material of the first electrode.
    Type: Application
    Filed: October 15, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shintaro SATO, Hironori Nishino, Daiyu Kondo, Kenjiro HAYASHI
  • Publication number: 20200152679
    Abstract: A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.
    Type: Application
    Filed: September 30, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Shintaro SATO, Hironori Nishino, Daiyu Kondo, Kenjiro Hayashi
  • Patent number: 10616517
    Abstract: An imaging apparatus includes an image sensor including a common sensor element, the common sensor element having a plurality of output systems therefrom, and a signal processing circuit that generates an image signal from outputs of the image sensor, wherein the plurality of output systems individually include a transistor, a capacitor that stores charge in accordance with a current flowing through the sensor element via the transistor, and output circuitry that outputs a sensor signal in accordance with a voltage of the capacitor, wherein the transistors individually allow the current to flow in time periods different with each other, and the signal processing circuit does not use the sensor signals if the sensor signals do not match with each other, and the signal processing circuit uses the sensor signals for generating the image signal if the sensor signals match with each other.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: April 7, 2020
    Assignee: FUJITSU LIMITED
    Inventors: Hironori Nishino, Yasuo Matsumiya
  • Publication number: 20200045248
    Abstract: An apparatus for infrared detection includes: an infrared detection element array that includes an array of a plurality of pixels, the array of the plurality of pixels being configured such that a first pixel and a second pixel are repeatedly arranged in a predetermined arrangement pattern, the first pixel being a pixel configured to respond to infrared light of a first wavelength, the second pixel being a pixel configured to respond to a second wavelength different from the first wavelength; and a readout circuit configured to be coupled to the infrared detection element array, wherein the first pixel is configured to be coupled to the readout circuit via a first connection electrode, and wherein the second pixel is configured to be coupled to the readout circuit via a second connection electrode, the second connection electrode being an electrode having a height different from that of the first connection electrode.
    Type: Application
    Filed: July 22, 2019
    Publication date: February 6, 2020
    Applicant: FUJITSU LIMITED
    Inventor: Hironori Nishino
  • Patent number: 10418500
    Abstract: An infrared detector includes a quantum dot structure, and an electrode that is coupled to the quantum dot structure, wherein the quantum dot structure is obtained by stacking a plurality of structures each including a quantum dot, a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, and an intermediate layer under the first barrier layer, and wherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: September 17, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Ryo Suzuki, Junichi Kon, Hironori Nishino
  • Patent number: 10404929
    Abstract: A signal output circuit includes a transistor includes a source that is coupled to a light receiving element and a gate of which electric potential is fixed, a first switch circuit capable of fixing a potential of the source to a reference potential, a second switch circuit coupled to a drain of the transistor, a third switch circuit coupled to the drain, a first capacitor coupled to the drain via the second switch circuit and coupled to the drain via the third switch circuit, wherein a first voltage according to a first current flowing through the transistor via the second switch circuit occurs, and a second voltage according to a second current flowing through the transistor via the third switch circuit occurs, and an output circuit that outputs a first signal corresponding to the first voltage and a second signal corresponding to the second voltage.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: September 3, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Hironori Nishino, Akira Sawada
  • Patent number: 10236319
    Abstract: A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: March 19, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Ryo Suzuki, Hiroyasu Yamashita, Junichi Kon, Hironori Nishino
  • Publication number: 20190019907
    Abstract: An infrared detector includes a quantum dot structure, and an electrode that is coupled to the quantum dot structure, wherein the quantum dot structure is obtained by stacking a plurality of structures each including a quantum dot, a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, and an intermediate layer under the first barrier layer, and wherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer.
    Type: Application
    Filed: July 2, 2018
    Publication date: January 17, 2019
    Applicant: FUJITSU LIMITED
    Inventors: RYO SUZUKI, Junichi Kon, Hironori Nishino
  • Patent number: 10145741
    Abstract: A heat source detection device includes a processor configured to calculate, as a single-wavelength temperature, one of a first temperature obtained by converting a first output output from the infrared sensor in accordance with an incident amount of infrared rays in a first infrared wavelength band into a temperature, a second temperature obtained by converting a second output from the infrared sensor in accordance with an incident amount of infrared rays in a second infrared wavelength band into a temperature and an average value of the first and second temperatures, and calculate a dual-wavelength temperature obtained by converting the ratio between the first and second outputs into a temperature; and to determine a temperature of the heat source based on the dual-wavelength temperature and determine a distance to the heat source from the infrared sensor based on a comparison result between the single-wavelength temperature and dual-wavelength temperature.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: December 4, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Hironori Nishino, Yasuo Matsumiya
  • Publication number: 20180077370
    Abstract: A signal output circuit includes a transistor includes a source that is coupled to a light receiving element and a gate of which electric potential is fixed, a first switch circuit capable of fixing a potential of the source to a reference potential, a second switch circuit coupled to a drain of the transistor, a third switch circuit coupled to the drain, a first capacitor coupled to the drain via the second switch circuit and coupled to the drain via the third switch circuit, wherein a first voltage according to a first current flowing through the transistor via the second switch circuit occurs, and a second voltage according to a second current flowing through the transistor via the third switch circuit occurs, and an output circuit that outputs a first signal corresponding to the first voltage and a second signal corresponding to the second voltage.
    Type: Application
    Filed: August 24, 2017
    Publication date: March 15, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Hironori Nishino, Akira Sawada
  • Publication number: 20180053805
    Abstract: A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.
    Type: Application
    Filed: August 10, 2017
    Publication date: February 22, 2018
    Applicant: FUJITSU LIMITED
    Inventors: RYO SUZUKI, Hiroyasu YAMASHITA, Junichi Kon, Hironori Nishino
  • Publication number: 20180035065
    Abstract: An imaging apparatus includes an image sensor including a common sensor element, the common sensor element having a plurality of output systems therefrom, and a signal processing circuit that generates an image signal from outputs of the image sensor, wherein the plurality of output systems individually include a transistor, a capacitor that stores charge in accordance with a current flowing through the sensor element via the transistor, and output circuitry that outputs a sensor signal in accordance with a voltage of the capacitor, wherein the transistors individually allow the current to flow in time periods different with each other, and the signal processing circuit does not use the sensor signals if the sensor signals do not match with each other, and the signal processing circuit uses the sensor signals for generating the image signal if the sensor signals match with each other.
    Type: Application
    Filed: July 10, 2017
    Publication date: February 1, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Hironori Nishino, Yasuo MATSUMIYA
  • Publication number: 20180031425
    Abstract: A heat source detection device includes a processor configured to calculate, as a single-wavelength temperature, one of a first temperature obtained by converting a first output output from the infrared sensor in accordance with an incident amount of infrared rays in a first infrared wavelength band into a temperature, a second temperature obtained by converting a second output output from the infrared sensor in accordance with an incident amount of infrared rays in a second infrared wavelength band into a temperature and an average value of the first and second temperatures, and calculate a dual-wavelength temperature obtained by converting the ratio between the first and second outputs into a temperature; and to determine a temperature of the heat source based on the dual-wavelength temperature and determine a distance to the heat source from the infrared sensor based on a comparison result between the single-wavelength temperature and dual-wavelength temperature.
    Type: Application
    Filed: May 31, 2017
    Publication date: February 1, 2018
    Applicant: FUJITSU LIMITED
    Inventors: Hironori Nishino, Yasuo MATSUMIYA
  • Patent number: 9747138
    Abstract: An information processing device comprising a processor that selects, from among a plurality of data processing section that subject data blocks to a predetermined process, a data processing section to which a first data block group with first identification information based on the data blocks is allocated, and divides, when a workload placed on the data processing section exceeds a first threshold, the first data block group allocated to the data processing section into a plurality of second data block groups with second identification information based on the data blocks, and selects, from among the plurality of data processing sections, data processing sections to which the plurality of second data block groups are allocated.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: August 29, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Yuta Miwa, Hironori Nishino, Makoto Yamaguchi
  • Publication number: 20150370604
    Abstract: An information processing device comprising a processor that selects, from among a plurality of data processing sections that subject data blocks to a predetermined process, a data processing section to which a first data block group with first identification information based on the data blocks is allocated, and divides, when a workload placed on the data processing section exceeds a first threshold, the first data block group allocated to the data processing section into a plurality of second data block groups with second identification information based on the data blocks, and selects, from among the plurality of data processing sections, data processing sections to which the plurality of second data block groups are allocated.
    Type: Application
    Filed: June 17, 2015
    Publication date: December 24, 2015
    Applicant: Fujitsu Limited
    Inventors: Yuta Miwa, Hironori Nishino, Makoto Yamaguchi
  • Patent number: 8426816
    Abstract: An A/D converter device includes a zone identifying circuit configured to identify which one of a plurality of level zones a voltage level of an analog output signal is in; a shift voltage generating circuit configured to generate a shift voltage which corresponds to a relevant one of the level zones; an operational amplifier circuit configured to change the analog output signal by means of the shift voltage, the operational amplifier circuit being configured to amplify the changed analog output signal to suit an A/D conversion input range so as to generate an amplified and shifted analog signal; a first A/D converter circuit configured to A/D-convert the amplified and shifted analog signal so as to calculate a first A/D converted value; and a second A/D converted value calculating circuit configured to calculate a second A/D converted value from the first A/D converted value in accordance with the relevant level zone.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: April 23, 2013
    Assignee: Fujitsu Limited
    Inventors: Akira Sawada, Hironori Nishino
  • Patent number: 8395106
    Abstract: An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: March 12, 2013
    Assignees: Technical Research & Development Institute Ministry of Defense of Japan, Fujitsu Limited
    Inventors: Minoru Doshida, Mitsuhiro Nagashima, Michiya Kibe, Hiroyasu Yamashita, Hironori Nishino, Yusuke Matsukura, Yasuhito Uchiyama
  • Patent number: 8373155
    Abstract: An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: February 12, 2013
    Assignees: Technical Research & Development Institute Ministry of Defense of Japan, Fujitsu Limited
    Inventors: Toshihiro Okamura, Mitsuhiro Nagashima, Michiya Kibe, Hironori Nishino, Yasuhito Uchiyama, Yusuke Matsukura
  • Patent number: 8120687
    Abstract: A signal reading method successively outputs a read signal by scanning a voltage value of an integrating capacitor in an image sensor in which a plurality of sensor parts are arranged in a two-dimensional array made up of rows and columns and each sensor part includes the integrating capacitor accumulating a charge obtained by integrating a photocurrent output from a sensor. A first integration of the photocurrent using the integrating capacitor and a first sampling and holding using a sample and hold capacitor are performed in a first time interval, during a time of one frame made up of the first through third time intervals. A second integration of the photocurrent using the integrating capacitor is performed in the second time interval, and processes in the first and second time intervals are performed in common with respect to all of the sensor parts simultaneously. A vertical scan is started by selecting the row in an order starting from a first row.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: February 21, 2012
    Assignee: Fujitsu Limited
    Inventors: Hironori Nishino, Akira Sawada