Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a polyether compound containing a repeating unit represented by the following general formula (I); and (B) an organic solvent, where Ar1 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or the like, R1 represents a substituted or unsubstituted, linear, branched, or cyclic, saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms or a substituted or unsubstituted, linear, branched, or cyclic heteroalkylene group having 1 to 20 carbon atoms, and “n” and “m” each represent an integer of 0 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.

Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a novolak resin having a repeating unit structure represented by the following general formula (I) and/or (II); and (B) an organic solvent, where R1 is a combination of at least two kinds within a single resin and represents a hydrogen atom, a substituted or unsubstituted, linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted, linear, branched, or cyclic alkenyl group having 2 to 20 carbon atoms, or a substituted or unsubstituted, linear, branched, or cyclic alkynyl group having 2 to 20 carbon atoms, and “n1” represents an integer of 1 or more. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits excellent processing resistance and excellent gas permeability.

Abstract: The present invention is a pattern forming method includes steps of: forming a resist underlayer film by using a composition for forming a resist underlayer film on a substrate to be processed; forming a resist middle layer film on the resist underlayer film; forming a resist upper layer film on the resist middle layer film; forming a pattern in the resist upper layer film; transferring the pattern to the resist middle layer film; transferring the pattern to the resist underlayer film; forming the pattern in the substrate to be processed; trimming the resist underlayer film; and forming a staircase-shaped pattern in the substrate to be processed. The composition for forming a resist underlayer film contains a resin and an organic solvent. The resin represented by the following formula (1) is used.

Abstract: The present invention is a composition for forming a resist underlayer film used for a multilayer resist method contains (A) a resin, (B) a base generator, and (C) an organic solvent, wherein a weight-average molecular weight of (A) the resin is 3,000 to 10,000, (A) the resin is (A-1) a resin containing a phenolic hydroxyl group and a group obtained by modifying a phenolic hydroxyl group, or (A-2) a mixture of a resin containing a phenolic hydroxyl group and a resin containing a group obtained by modifying a phenolic hydroxyl group, and (A) the resin satisfies relations of a+b=1, 0.1?a?0.5, and 0.5?b?0.9, wherein “a” is a proportion of a phenolic hydroxyl group and “b” is a proportion of a group obtained by modifying a phenolic hydroxyl group contained in (A) the resin. This provides: a composition for forming a resist underlayer film having an excellent filling property and adhesiveness to a substrate, and a patterning process using thereof are to be provided.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: The present invention is a composition for forming a metal oxide film, including: (A) a metal oxide nanoparticle; (B) a flowability accelerator containing a resin having a structural unit represented by the following general formula (1); (C) a dispersion stabilizer having two or more benzene rings or having one benzene ring and a structure represented by the following general formula (C-1), and the dispersion stabilizer being composed of an aromatic group-containing compound having a molecular weight of 500 or less; and (D) an organic solvent, wherein the flowability accelerator (B) has a content of 9 mass % or more in an entirety of the composition, a ratio Mw/Mn of 2.50?Mw/Mn?9.00, and the flowability accelerator (B) having no cardo structure.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

Abstract: A resist underlayer film material contains (A) a resin having a compound shown in the following general formula (1A), and (B) an organic solvent. Mw/Mn of the compound shown in the general formula (1A) is 1.00?Mw/Mn?1.25. This provides: a resist underlayer film material having all of favorable dry etching resistance, heat resistance to 500° C. or higher, and high filling and planarizing properties; and methods for forming a resist underlayer film and patterning processes which use the material.

Abstract: The present invention provides a resist underlayer film material used in a multilayer resist method, the material containing: (A) a resin having a structural unit shown by the following general formula (1); and (B) an organic solvent. The resin content is 20 mass % or more. This provides: a resist underlayer film material having excellent filling property and adhesiveness, and favorable planarizing property; and a patterning process and a method for forming a resist underlayer film which use the material.

Abstract: A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.

Abstract: The present invention is a material for forming an organic film, containing: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, where W1 represents a tetravalent organic group, n1 represents an integer of 0 or 1, n2 represents an integer of 1 to 3, and R1 represents any one or more of the following general formulae (1B). This provides an imide compound, where the compound is cured not only under air, but also under film formation conditions of inert gas, and can form an organic underlayer film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable film formation and adhesion to a substrate, and a material for forming an organic film containing the compound.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.

Abstract: A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.

Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.

Abstract: The present invention provides a hot dip plated high strength steel sheet comprising a cold rolled steel sheet and a hot dip plated layer formed on the surface thereof, characterized in that the cold rolled steel sheet contains, by mass %, C: 0.0005 to 0.0050%, Si: over 0.3 to 1.0%, Mn: 0.70 to 2.0%, P: 0.05% or less, Ti: 0.010 to 0.050%, Nb: 0.010 to 0.040%, B: 0.0005 to 0.0030%, S: 0.010% or less, Al: 0.01 to 0.30%, and N: 0.0010 to 0.01%, and a balance of Fe and unavoidable impurities, and the cold rolled steel sheet has a value of TB* defined by the equation TB*=(0.11?[Ti])/(ln ([B]×10000)) of 0.03 to 0.06, and P is present in an amount of [P]?10×[B]+0.03, where [Ti] is the Ti content in mass percent, [B] is the B content in mass percent, and [P] is the P content in mass percent.

Abstract: The present invention provides hot dip plated high strength steel sheet for press forming use having a tensile strength of 380 MPa to less than 540 MPa, having a press formability able to be used for the automobile field, in particular fuel tank applications, and having superior secondary work embrittlement resistance and superior seam weld zone low temperature toughness and further superior plateability and a method of production of the same and provides hot dip plated high strength steel sheet for press forming use of the present invention having cold rolled steel sheet and a hot dip plated layer formed on the surface of said cold rolled steel sheet, characterized in that said cold rolled steel sheet contains, by mass %, C: 0.0005 to 0.0050%, Si: over 0.3 to 1.0%, Mn: 0.70 to 2.0%, P: 0.05% or less, Ti: 0.010 to 0.050%, Nb: 0.010 to 0.040%, B: 0.0005 to 0.0030%, S: 0.010% or less, Al: 0.01 to 0.30%, and N: 0.0010 to 0.

Abstract: A pressing cuff presses a pressure sensor above an artery. The level of the pressure applied to the pressure sensor is changed while the pulse wave is measured based on information about the pressure from the pressure sensor. In order to adjust the level of the applied pressure using the pressure of gas in the pressing cuff, a three-port valve and a two-port valve are controlled so that the connection is changed to establish a state of holding the amount of the gas in the pressing cuff. Then, the state is changed to a state of isolating and discharging gas in which a part of the held gas is isolated from the remaining amount of the gas to be discharged. Then, the state is changed to the state of holding the remaining amount of gas in the pressing cuff.

Abstract: A pulse wave measuring apparatus obtains the N-th derivative of a measured pulse waveform. The pulse waveform is classified into waveforms ?-? in accordance with the presence/absence of a shoulder (inflection point) at a rising phase of a pulse waveform of one beat, and also in accordance with the presence/absence of a shoulder in a falling phase. In each classified waveform, each calculated characteristic point of the N-th derivative corresponds to a traveling wave or reflected wave. The pulse wave measuring apparatus can calculate an AI value or the like that is the characteristic value of a pulse wave using such characteristic points and calculation equation of each waveform.