Abstract: A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a La0.6Sr0.4MnO3-? electrode (12), a La0.6Sr0.4Mn1-yRuyO3-? electrode (14), both as ferromagnetic (including ferrimagnetic) metal materials, and a LaAlO3-? (electrically insulating layer) (13) arranged between the two electrodes (12) and (14).

Abstract: A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a La0.6Sr0.4MnO3-? electrode (12), a La0.6Sr0.4Mn1-yRuyO3-? electrode (14), both as ferromagnetic (including ferrimagnetic) metal materials, and a LaAlO3-? (electrically insulating layer) (13) arranged between the two electrodes (12) and (14).

Abstract: A magnetic switching device of the present invention includes: at least one transition member; at least one electrode; and at least one free magnetic member. The transition member contains a perovskite compound that contains at least a rare earth element and an alkaline-earth metal, the electrode and the free magnetic member are arranged in parallel and in a noncontact manner on the transition member, at least one of the free magnetic members is coupled magnetically with the transition member, and the transition member undergoes at least ferromagnetism-antiferromagnetism transition by injecting or inducing electrons or holes, whereby a magnetization direction of at least one of the free magnetic members changes. This configuration is applicable to a magnetic memory that records/reads out magnetization information of the free magnetic layer and various magnetic devices that utilize a resistance change of the magnetoresistive effect portion.

Abstract: PrBa.sub.2 Cu.sub.3 O.sub.Y exhibiting superconductivity is provided by a method including the steps of preparing a solvent consisting of a mixture of praseodymium oxide, at least one of barium oxide and barium carbonate, and copper oxide at a mixing ratio of between 1:3:5 and 1:8:20, disposing the solvent between a feed rod of PrBa.sub.2 Cu.sub.3 O.sub.7 formed to a high density and a seed crystal, heating the solvent to a temperature of 880.degree.-980.degree. C. in an atmosphere of an inert gas of at least one of argon and nitrogen mixed with 0.01-2% oxygen to form a floating solvent zone, moving the floating solvent zone toward the feed rod at 0.1-1.0 mm/hr under a temperature gradient at the solid-liquid interface of 25.degree.-35.degree. C./mm to precipitate single crystal on the seed crystal, and heat-treating the single crystal obtained in an atmosphere containing not less than 15% oxygen. Another aspect of the invention provides a superconducting device including the superconducting PrBa.sub.2 Cu.

Abstract: An anisotropic superconductor junction device consisting of a lower superconducting layer and an upper superconducting layer separated by a barrier layer, in which the upper and lower superconducting layers and the barrier layer each have a (103) crystal orientation in which the c axis is arranged in the same direction at an angle of 45 degrees relative to the plane of the junction.

Abstract: A Josephson transmission line device comprising a Josephson transmission line consisting of a pair of superconducting layers and a junction layer disposed between the superconducting layers to constitute a Josephson junction; a fluxon stopping position constituted by at least one resistor element in at least a part of the Josephson transmission line; a fluxon driving current source connected to the resistor element; a fluxon generating current source connected to the Josephson transmission line for generating fluxons therein; and an output circuit for extracting the fluxons generated in the Josephson transmission line as output signals. Fluxons generated in the Josephson transmission line can be made to stop at and depart from the stopping positions by selective application of fluxon driving current.