Abstract: A high-frequency module includes: a chassis which is made of a conductor and which has an internal space; a high-frequency circuit board which is housed in the internal space of the chassis; and a resistive element provided between an inner wall that opposes the high-frequency circuit board among inner walls of the chassis which define the internal space and the high-frequency circuit board.

Abstract: A distributed mixer is configured of an artificial transmission line of which an input end is connected to an LO terminal and a terminal end is connected to an IF terminal, an artificial transmission line of which an input end is connected to an RF terminal, FETs that perform frequency synthesis of LO signals and RF signals and that are disposed following the artificial transmission lines and of which gates are connected to the artificial transmission line and sources are grounded, a bias circuit that applies gate bias voltage to a terminal end of the artificial transmission line, a terminating resistor that connects the terminal end of the artificial transmission line and a ground, and a plurality of transmission lines provided between the artificial transmission line and a drain of each FET.

Abstract: A control valve includes: a body having a control chamber communication port and a suction chamber communication port; a valve element that moves toward and away from a valve hole to close and opening a bleed valve, the ports communicating with each other through the valve hole; a solenoid to generate a drive force in an opening direction of the bleed valve; and a pressure sensing element to sense a pressure in the suction chamber or a pressure in the control chamber, and generate a counterforce against the drive force from the solenoid depending on a magnitude of the sensed pressure. An opening degree of the bleed valve is controlled so that the sensed pressure becomes a set pressure. A bleed passage for delivering the refrigerant introduced through the control chamber communication port to the suction chamber even while the bleed valve is in a closed state is formed.

Abstract: A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

Abstract: A heat exchanger is configured to exchange heat between a heat medium and an air. The heat exchanger includes a tube through which the heat medium flows therein, and a fin that is formed by bending a metal plate and that is brazed to a surface of the tube. The fin includes a louver. The surface of the tube defines an introducing groove configured to introduce a brazing material melted at brazing from a connecting portion between the tube and the fin to an other portion.

Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.

Abstract: A control valve includes: a first valve to control a flow rate of refrigerant flowing from a discharge chamber to a control chamber of a compressor; a second valve to control a flow rate of the refrigerant flowing from the control chamber to a suction chamber; a solenoid to generate a drive force in a first valve closing direction and a second valve opening direction; a biasing member to generate a biasing force in an first valve opening direction and a second valve closing direction; and a pressure sensing part to sense a pressure in the suction chamber or the control chamber, and generate a counterforce against the drive force.

Abstract: An electroacoustic transducer includes a dynamic speaker that generates a first acoustic sound, and a piezoelectric speaker that generates a second acoustic sound. The sum of the sound pressures of the first and second acoustic sounds in a crossover frequency range of the sound pressure of the first acoustic sound and the sound pressure of the second acoustic sound, is adjusted to be equal to or greater than 0.5 times the sound pressure of the first acoustic sound in the crossover frequency range so as to improve the acoustic properties in the crossover frequency range.

Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.

Abstract: An electroacoustic transducer that can improve acoustic characteristics has a housing and a piezoelectric speaker. The piezoelectric speaker has a first vibration plate with a periphery part supported directly or indirectly on the housing, as well as a piezoelectric element placed at least on one side of the first vibration plate, and is constituted in such a way that its rigidity is asymmetric with respect to the center axis of the first vibration plate.

Abstract: A vibration generating device 10 includes: a diaphragm 11; and a first piezoelectric actuator 12 and a second piezoelectric actuator 13 attached on an upper surface 11a and a lower surface 11b of the diaphragm 11, respectively, so as to sandwich the diaphragm 11 therebetween in a vicinity of an end surface of the diaphragm 11, wherein, in a top view of the upper surface 11a of the diaphragm 11, the first piezoelectric actuator 12 is disposed at a position shifted with respect to the second piezoelectric actuator 13.

Abstract: A vibration generating device 90 includes: a housing 30 in a rectangular shape as viewed in a first direction, the housing 30 comprising: a first support portion 31 extending along a first side in a second direction perpendicular to the first direction and; a second support portion 32 extending along a second side opposite to the first side in the second direction; a panel 60 supported by the first support portion and the second support portion; and a piezoelectric element 11 attached to the panel in such a manner as to be shifted in the second direction toward the first side with respect to a central portion of the panel, wherein a width in the second direction of a portion of the panel supported by the first support portion is larger than a width in the second direction of a portion of the panel supported by the second support portion.

Abstract: A vibration generating device 90 for non-acoustic applications, includes: a piezoelectric element 11; a diaphragm 82 attached to the piezoelectric element 11 on a first side in a first direction; and a first frame body 84 provided along an outer peripheral portion of the diaphragm 82 to transmit vibration of the diaphragm 82 to a vibration object member 60, wherein the first frame body 84 is connectable to the vibration object member 60 in such a manner that the first frame body 84, the diaphragm 82 and the vibration object member 60 form an enclosed space 64.

Abstract: The optical subassembly includes a photodetector including element terminal groups for light-receiving elements, and an electric signal controller including IC terminal groups, wherein any one of the element terminal group and the IC terminal group has a two-terminal configuration, and the other one has a three-terminal configuration, wherein, in a case where terminal groups at both ends where center positions thereof are disposed on the inner side together and have the two-terminal configuration, the first connection terminals are disposed on the outer side than a second connection terminals in the two-terminal configuration, and in a case where terminal groups at both ends where center positions thereof are on the outer side together and have the two-terminal configuration, a first connection terminal in the two-terminal configuration is disposed on the inner side than the second connection terminal.

Abstract: A female terminal (30) to be connected to an end of a wire (20) in which a core (21) is covered with an insulation coating (22), and the wire (20) being pulled out rearward therefrom. The female terminal (30) includes two coating crimping pieces (39) extending in opposite lateral directions intersecting a pull-out direction of the wire (20) and to be crimped to an outer peripheral surface of the insulation coating (22). Compressing portions (41) are formed on the surface of each coating crimping piece (39) that faces the insulation coating (22) and are disposed adjacent a front edge of each coating crimping piece (39). Each compressing portion has an internal space narrowed toward a rear end from the front edge of the coating crimping piece (39).

Abstract: Provided are a semiconductor light receiving device, an optical receiver module, and a manufacturing method thereof in which characteristics of the device are improved when the device has a structure in which a mesa structure including layers formed of a common material is buried by a buried layer. The semiconductor light receiving device includes the mesa structure including the layers formed of a commonmaterial, the layers including an absorbing layer, the mesa structure being buried by the buried layer formed so as to surround side surfaces of the mesa structure. The mesa structure has a cross section having a forwardly tapered portion and a reversely tapered portion.

Abstract: A wire with terminal includes a wire in which a core is covered with a coating, and a terminal 20 including a wire barrel 24 to be crimped to the core exposed from the coating of the wire and an insulation barrel 26 to be crimped to the coating of the wire. The wire is pulled rearwardly from the terminal. Recesses 26B are provided on a surface of the insulation barrel 26 to be crimped and openings of the recesses 26B are shaped to become narrower toward a rear side. As the wire is pulled more rearwardly, the coating penetrating into the recesses 26B moves rearwardly of the recesses 26B to be compressed and hardened and becomes less likely to come out of the recesses 26B. Thus, impact strength can be enhanced.

Abstract: Provided is a back illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.

Abstract: A multilayer piezoelectric element includes a ceramic body formed by a piezoelectric ceramic, and having first and second end face facing a longitudinal direction, first and second principal faces facing a thickness direction perpendicular to the longitudinal direction. A pair of external electrodes cover the first and second end faces, extend from the first and second end faces onto the first principal face via ridge parts connecting the end faces with the principal faces, and project in the thickness direction on the first principal face. Multiple internal electrodes are stacked inside the ceramic body and are connected alternately to the pair of external electrodes along the thickness direction. A surface electrode is provided on at least one of the first and second principal faces, and connected to the external electrode different from the one to which the internal electrode adjacent in the thickness direction is connected.

Abstract: An electroacoustic transducer includes a dynamic speaker that generates a first acoustic sound, and a piezoelectric speaker that generates a second acoustic sound. The sum of the sound pressures of the first and second acoustic sounds in a crossover frequency range of the sound pressure of the first acoustic sound and the sound pressure of the second acoustic sound, is adjusted to be equal to or greater than 0.5 times the sound pressure of the first acoustic sound in the crossover frequency range so as to improve the acoustic properties in the crossover frequency range.