Patents by Inventor Hiroshi Hozoji

Hiroshi Hozoji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090160048
    Abstract: A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.
    Type: Application
    Filed: February 20, 2009
    Publication date: June 25, 2009
    Applicant: Hitachi, Ltd.
    Inventors: Kinya NAKATSU, Hideki MIYAZAKI, Yoshitaka TAKEZAWA, Toshiaki ISHII, Hiroshi HOZOJI
  • Patent number: 7542317
    Abstract: The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group. Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.
    Type: Grant
    Filed: August 10, 2006
    Date of Patent: June 2, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Toshiaki Morita, Hiroshi Hozoji, Kazuhiro Suzuki, Toshiya Satoh, Osamu Otsuka
  • Patent number: 7528485
    Abstract: A semiconductor device which uses a semiconductor element having main current input/output electrodes, one and the other of which are extended up to a one surface and a remaining surface of a semiconductor chip respectively for causing one of the input/output electrodes to be contacted with a conductive layer of a insulating substrate, whereby the semiconductor element is supported on or above the insulating substrate. A conductive strip which is made of a composite material of carbon and aluminum or a composite material of carbon and copper is used for connection between the remaining input/output electrode of the semiconductor chip and the conductive layer of the insulating substrate.
    Type: Grant
    Filed: July 29, 2005
    Date of Patent: May 5, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Toshiaki Morita, Hiroshi Hozoji, Kazuhiro Suzuki
  • Publication number: 20090086437
    Abstract: In an electronic control device that includes two or more kinds of lead-insertion-type parts, including at least a coil and a capacitor, the parts are installed on a support that has a wiring, a terminal structure and mechanically fixing portions; the leads of the above parts are respectively inserted in and electrically connected to holes formed in the wiring portion of the support; the parts and the support are fixed to each other with an adhesion material for fixation; the upper surfaces of the parts are attached to a metallic chasis with a thermally conductive material of a low elasticity modulus interposed in between; the mechanically fixing portions of the support are fixed to the metallic chasis; and the terminal structure of the support is electrically connected to a circuit board that mounts at least a controlling element.
    Type: Application
    Filed: August 13, 2008
    Publication date: April 2, 2009
    Inventors: Nobutake Tsuyuno, Hideto Yoshinari, Hiroshi Hozoji, Masahiko Asano, Masahide Harada, Shinya Kawakita
  • Patent number: 7504720
    Abstract: A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.
    Type: Grant
    Filed: August 17, 2006
    Date of Patent: March 17, 2009
    Assignee: Hitachi, Ltd.
    Inventors: Kinya Nakatsu, Hideki Miyazaki, Yoshitaka Takezawa, Toshiaki Ishii, Hiroshi Hozoji
  • Publication number: 20090008128
    Abstract: The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.
    Type: Application
    Filed: July 31, 2008
    Publication date: January 8, 2009
    Inventors: Takehiko Hasebe, Takehide Yokozuka, Nobuyuki Ushifusa, Masahide Harada, Eiji Matsuzaki, Hiroshi Hozoji
  • Patent number: 7425762
    Abstract: The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: September 16, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Takehiko Hasebe, Takehide Yokozuka, Nobuyuki Ushifusa, Masahide Harada, Eiji Matsuzaki, Hiroshi Hozoji
  • Publication number: 20080173398
    Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.
    Type: Application
    Filed: December 27, 2007
    Publication date: July 24, 2008
    Inventors: Yusuke Yasuda, Toshiaki Morita, Eiichi Ide, Hiroshi Hozoji, Toshiaki Ishii
  • Publication number: 20080156398
    Abstract: It is an object of this invention to provide a bonding material capable of realizing bonding by metallic bonding at a bonding interface at a lower temperature compared to a bonding material using a metal particle having an average particle diameter of not more than 100 nm and a bonding method. There is provided a bonding material including a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of 1 nm to 50 ?m and a reducing agent composed of an organic substance, wherein the content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.
    Type: Application
    Filed: December 28, 2007
    Publication date: July 3, 2008
    Inventors: Yusuke Yasuda, Toshiaki Morita, Eiichi Ide, Hiroshi Hozoji, Toshiaki Ishii
  • Publication number: 20080160183
    Abstract: There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 ?m as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 ?m and the silver oxide particles.
    Type: Application
    Filed: December 28, 2007
    Publication date: July 3, 2008
    Inventors: Eiichi Ide, Toshiaki Morita, Yusuke Yasuda, Hiroshi Hozoji
  • Patent number: 7393771
    Abstract: An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electronic part to each other, the method comprises the step of bonding both the electrodes through a metal layer made up of aggregated particles of at least one kind of metal. Then, the metal particles have an average particle size of 1 to 50 nm. Preferably, the metal particles form a metal layer having a thickness of 5 to 100 ?m.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: July 1, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Hozoji, Toshiaki Morita, Hiroshi Sasaki
  • Publication number: 20070216012
    Abstract: An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electronic part to each other, the method comprises the step of bonding both the electrodes through a metal layer made up of aggregated particles of at least one kind of metal. Then, the metal particles have an average particle size of 1 to 50 nm. Preferably, the metal particles form a metal layer having a thickness of 5 to 100 ?m.
    Type: Application
    Filed: April 16, 2007
    Publication date: September 20, 2007
    Applicant: Hitachi, Ltd.
    Inventors: HIROSHI HOZOJI, Toshiaki Morita, Hiroshi Sasaki
  • Publication number: 20070200199
    Abstract: Providing a technology capable of obtaining a desired resistance value through preferable controllability, and improving linearity between voltage and current.
    Type: Application
    Filed: January 19, 2007
    Publication date: August 30, 2007
    Inventors: Susumu Murakami, Takeo Nonaka, Shinji Naito, Minoru Nakamura, Hiroshi Hozoji
  • Publication number: 20070096278
    Abstract: A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base.
    Type: Application
    Filed: August 17, 2006
    Publication date: May 3, 2007
    Applicant: Hitachi, Ltd.
    Inventors: Kinya Nakatsu, Hideki Miyazaki, Yoshitaka Takezawa, Toshiaki Ishii, Hiroshi Hozoji
  • Publication number: 20070080447
    Abstract: The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.
    Type: Application
    Filed: December 4, 2006
    Publication date: April 12, 2007
    Inventors: Takehiko Hasebe, Takehide Yokozuka, Nobuyuki Ushifusa, Masahide Harada, Eiji Matsuzaki, Hiroshi Hozoji
  • Publication number: 20070051974
    Abstract: The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group. Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.
    Type: Application
    Filed: August 10, 2006
    Publication date: March 8, 2007
    Applicant: Hitachi, Ltd.
    Inventors: Katsunori Azuma, Toshiaki Morita, Hiroshi Hozoji, Kazuhiro Suzuki, Toshiya Satoh, Osamu Otsuka
  • Patent number: 7172130
    Abstract: The present invention aims to improve the durability of an RFID chip inlet. A module including an RFID chip amounted to an antenna is covered with polyimide film with an adhesive layer to make up an RFID inlet. The outer surface of the RFID inlet is then covered with the surface processed to increase surface lubricity of a base part. When the RFID inlet is for use in a rubber product, it is mounted to a rubber base of the rubber product, the exposed surface of the RFID inlet is covered with an unvulcanized rubber, and the unvulcanized rubber is then pressed and heated causing the RFID inlet to be embedded in the rubber base.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: February 6, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Shigeharu Tsunoda, Hiroshi Hozoji, Madoka Minagawa
  • Patent number: 7145231
    Abstract: The invention provides an electronic apparatus having a metal core substrate including a metal plate, an insulating layer formed on the metal plate and a conductive layer formed on the insulating layer, and an electronic part, and to which the conductive layer and a terminal of the electronic part are connected. In the electronic apparatus, a member having a high thermal conductivity is arranged so as to be in contact with both of the metal plate and the electronic part. Accordingly, a heat radiating property of the electronic apparatus is increased.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: December 5, 2006
    Assignee: Hitachi, Ltd.
    Inventors: Takehiko Hasebe, Takehide Yokozuka, Nobuyuki Ushifusa, Masahide Harada, Eiji Matsuzaki, Hiroshi Hozoji
  • Publication number: 20060267218
    Abstract: An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electronic part to each other, the method comprises the step of bonding both the electrodes through a metal layer made up of aggregated particles of at least one kind of metal. Then, the metal particles have an average particle size of 1 to 50 nm. Preferably, the metal particles form a metal layer having a thickness of 5 to 100 ?m.
    Type: Application
    Filed: November 24, 2004
    Publication date: November 30, 2006
    Applicant: Hitachi, Ltd.
    Inventors: Hiroshi Hozoji, Toshiaki Morita, Hiroshi Sasaki
  • Patent number: 7084498
    Abstract: A semiconductor device which includes a semiconductor chip, an insulating film formed on the semiconductor chip, a plurality of projected stress relaxation materials formed on the insulating film, projected electrodes covering at least tops of the stress relaxation materials, and wiring lines for electrically connecting the projected electrodes and element electrodes of the semiconductor chip.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: August 1, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Yoshihide Yamaguchi, Shigeharu Tsunoda, Hiroyuki Tenmei, Hiroshi Hozoji, Naoya Kanda