Patents by Inventor Hiroshi Kotani
Hiroshi Kotani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120242216Abstract: A light-emitting device that suppresses color unevenness can be provided. A transparent member can be disposed on a fluorescence-containing resin layer. Part of excitation light can be emitted upward from an edge surface of the fluorescence-containing resin layer directly and without passing through the transparent member. Thus, fluorescent light emitted in large quantities from a place near an edge surface of the transparent member can be mixed with the excitation light emitted from the edge surface of the fluorescence-containing resin layer directly without passing through the transparent member, thereby suppressing color unevenness at a location near the edge surface of the transparent member.Type: ApplicationFiled: March 22, 2012Publication date: September 27, 2012Inventors: Hiroshi KOTANI, Takaaki SAKAI
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Publication number: 20120188772Abstract: A light-emitting device having an LED element and a resin layer including a convex portion covering the LED element can suppress color unevenness to achieve light emission with uniform color distribution. The light-emitting device can include a substrate, an LED element mounted on the substrate, a resin layer which contains a wavelength conversion material and is formed on the substrate to cover the LED element, the resin layer including a convex portion directly covering the LED element and a flat thin film portion extending around the convex portion, and a reflective portion which is formed over the thin film portion around the convex portion. A diffusion portion can be formed to cover the convex portion of the resin layer.Type: ApplicationFiled: January 23, 2012Publication date: July 26, 2012Inventors: Takaaki Sakai, Hiroshi Kotani, Takahiko Nozaki
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Patent number: 8143618Abstract: A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.Type: GrantFiled: February 17, 2009Date of Patent: March 27, 2012Assignee: Stanley Electric Co., Ltd.Inventors: Hiroshi Kotani, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Akio Ogawa, Tomofumi Yamamuro
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Patent number: 8039867Abstract: A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.Type: GrantFiled: August 13, 2009Date of Patent: October 18, 2011Assignee: Stanley Electric Co., Ltd.Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Hiroshi Kotani, Tomofumi Yamamuro
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Patent number: 7968363Abstract: A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).Type: GrantFiled: March 29, 2010Date of Patent: June 28, 2011Assignee: Stanley Electric Co., Ltd.Inventors: Hiroshi Kotani, Michihiro Sano, Hiroyuki Kato, Akio Ogawa
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Patent number: 7968905Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.Type: GrantFiled: July 1, 2008Date of Patent: June 28, 2011Assignee: Stanley Electric Co., Ltd.Inventors: Tomofumi Yamamuro, Michihiro Sano, Naochika Horio, Hiroyuki Kato, Akio Ogawa, Hiroshi Kotani
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Publication number: 20110133236Abstract: A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin.Type: ApplicationFiled: December 3, 2010Publication date: June 9, 2011Inventors: Takahiko Nozaki, Hiroshi Kotani
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Publication number: 20110116271Abstract: In the production of a light emitting device, in which a plurality of light emitting element parts carrying LED elements are formed on a substrate, and the substrate is diced, generation of shaving dusts is suppressed at the time of the dicing, and breakage of the substrate during the production process can be prevented. In the process of forming a slit crossing a region for forming a light emitting element part in a metal substrate, a recess which serves as a resin reservoir can be formed so as to cross the slit. The slit can be filled with an insulating material, the recess can be filled with a resin, and they both can be cured. A light emitting element part can be formed in the region for forming the light emitting element part, the metal substrate can be cut into units comprising one or a plurality of the light emitting element parts, and can be mounted on a printed circuit board on which a pattern is formed.Type: ApplicationFiled: November 17, 2010Publication date: May 19, 2011Inventors: Shunya Ide, Masanori Sato, Takahiko Nozaki, Takaaki Sakai, Hiroshi Kotani
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Patent number: 7943927Abstract: A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.Type: GrantFiled: July 13, 2009Date of Patent: May 17, 2011Assignee: Stanley Electric Co., Ltd.Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro
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Publication number: 20110084275Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.Type: ApplicationFiled: December 15, 2010Publication date: April 14, 2011Applicant: STANLEY ELECTRIC CO., LTD.Inventors: Tomofumi Yamamuro, Michihiro Sano, Naochika Horio, Hiroyuki Kato, Akio Ogawa, Hiroshi Kotani
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Publication number: 20110084299Abstract: An LED light source can include protection members to protect bonding wires. The LED can include a substrate including electrode patterns, a sub mount substrate located on the substrate, at least one flip LED chip mounted on the sub mount substrate and a phosphor rein covering the LED chip. The bonding wires can connect each of the electrode patterns to conductor patterns connecting to electrodes of the LED chip. The protection members can be located so as to surround both sides of the bonding wires. In addition, because each height of the protection members is higher than each maximum height of the bonding wires and is lower than a height of the phosphor resin, the protection members can protect the bonding wires from external pressure while the light flux is not reduced. Thus, the disclosed subject matter can provide a reliable LED light source having a favorable light distribution.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Inventors: HIROSHI KOTANI, Takahiko Nozaki
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Publication number: 20100181550Abstract: A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).Type: ApplicationFiled: March 29, 2010Publication date: July 22, 2010Applicant: STANLEY ELECTRIC CO., LTD.Inventors: Hiroshi KOTANI, Michihiro SANO, Hiroyuki KATO, Akio OGAWA
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Patent number: 7728347Abstract: A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.Type: GrantFiled: April 23, 2009Date of Patent: June 1, 2010Assignee: Stanley Electric Co., Ltd.Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro
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Publication number: 20090294758Abstract: A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.Type: ApplicationFiled: August 13, 2009Publication date: December 3, 2009Applicant: STANLEY ELECTRIC CO., LTD.Inventors: Akio OGAWA, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Hiroshi Kotani, Tomofumi Yamamuro
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Publication number: 20090272972Abstract: A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.Type: ApplicationFiled: July 13, 2009Publication date: November 5, 2009Applicant: STANLEY ELECTRIC CO., LTD.Inventors: Akio Ogawa, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro
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Publication number: 20090236598Abstract: A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.Type: ApplicationFiled: April 23, 2009Publication date: September 24, 2009Applicant: Stanley Electric Co., Ltd.Inventors: Akio OGAWA, Michihiro Sano, Hiroyuki Kato, Hiroshi Kotani, Tomofumi Yamamuro
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Publication number: 20090206333Abstract: A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.Type: ApplicationFiled: February 17, 2009Publication date: August 20, 2009Applicant: Stanley Electric Co., Ltd.Inventors: Hiroshi Kotani, Michihiro Sano, Hiroyuki Kato, Naochika Horio, Akio Ogawa, Tomofumi Yamamuro
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Publication number: 20090008660Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.Type: ApplicationFiled: July 1, 2008Publication date: January 8, 2009Applicant: Stanley Electric Co., Ltd.Inventors: Tomofumi Yamamuro, Michihiro Sano, Naochika Horio, Hiroyuki Kato, Akio Ogawa, Hiroshi Kotani
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Publication number: 20070134842Abstract: A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).Type: ApplicationFiled: October 31, 2006Publication date: June 14, 2007Inventors: Hiroshi Kotani, Michihiro Sano, Hiroyuki Kato, Akio Ogawa
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Patent number: 7221003Abstract: A light-emitting device can include a blue LED chip that is covered in a sealing resin composed of a filling resin mixed with a wavelength conversion material, such as a yellow fluorescent material. Light from the blue LED chip is mixed with a light from the yellow fluorescent material to obtain white light emission having a mixed color. The sealing resin has a light emission surface, which can be symmetrical about the normal line passing through the center of the blue LED chip. An optical multi-layered film including layered high- and low-refractive index films can be provided on the light emission surface.Type: GrantFiled: March 16, 2006Date of Patent: May 22, 2007Assignee: Stanley Electric Co., Ltd.Inventors: Kazuhiko Ueno, Hiroshi Kotani