Abstract: An integrated circuit device of large scale integration and a method of manufacturing the same makes possible high density packing of circuit elements by eliminating a great number of very minute contact holes. Instead, a circuit-element connector comprised of a polycrystalline silicon wiring path is formed by selective oxidation. Impurity atoms are introduced into the semiconductor substrate through the polycrystalline silicon circuit-element connector to form a desired circuit element. A layer of high-conductive material is provided on the polycrystalline silicon layer.

Abstract: A semiconductor device suitable for a high-density integrated circuit is disclosed. The semiconductor device comprises an electrode wiring layer made of silicon with a substantially flat surface deposited on a major surface of a semiconductor substrate, the periphery of which is filled with an insulating layer produced by selectively oxidizing the silicon, a first impurity doped region formed in the semiconductor substrate in self-aligning relation with the electrode wiring layer, and a second impurity doped region coupled to the first impurity doped region and underlain the insulating layer.

Abstract: An improved simple and cheap method of forming electrode connector for liquid crystal display device has been found. This novel method eliminates difficulties in complicated compression molding process required a high accuracy of dimensions in a molded electrode connector.

Abstract: A semiconductor device is disclosed in which a protrusion is interposed between a bump terminal electrode and the peripheral edge of the semiconductor substrate.

Abstract: In a method for fabricating a semiconductor device, a polycrystalline film deposited on a main surface of a substrate is subjected to selective oxidation to form polycrystalline silicon electrode wiring paths separated by silicon oxide. An impurity of a conductivity type opposite to that of the substrate is introduced through at least one of the wiring paths into the substrate. Also disclosed is a novel semiconductor device fabricated according to this process which has a reduced junction area and a shortened junction-to-electrode distance.

Abstract: In fabricating a large-scale semiconductor integrated circuit, a wiring layer within each unit cell is formed of a conductive material which is hard and highly resistant to corrosion, and test pads for each unit cell are formed of a conductive material which is soft and low resistant to corrosion. After testing each unit cell by using the test pads, the test pads are etched away. If necessary, pad relocation wiring which is used to substitute a good unit cell for a bad unit cell may be formed of the hard and highly corrosion-resistant conductive material, and an intercell wiring layer may be formed of the soft and low corrosion-resistant conductive material.

Abstract: In a method for fabricating a semiconductor device, a polycrystalline film deposited on a main surface of a substrate is subjected to selective oxidation to form polycrystalline silicon electrode wiring paths separated by silicon oxide. An impurity of a conductivity type opposite to that of the substrate is introduced through at least one of the wiring paths into the substrate. Also disclosed is a novel semiconductor device fabricated according to this process which has a reduced junction area and a shortened junction-to-electrode distance.

Abstract: A method of manufacturing a semiconductor device is disclosed, in which a polycrystalline silicon layer is formed over a semiconductor substrate coated with an insulating layer with a window and a first kind of impurity is doped to a first predetermined portion of the polycrystalline silicon layer to a depth at least reaching the surface of the semiconductor substrate. Then a peripheral of the doped portion of the polycrystalline silicon layer is converted into an insulator, and a second kind of impurity is doped into a second predetermined portion of the polycrystalline silicon layer to a depth at least reaching the surface of the semiconductor substrate, thereby providing electrode wiring paths including the first and second predetermined portions.

Abstract: A thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate. A layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is formed over the thin aluminum film and is covered with a thick aluminum film. Oxides of the upper thick aluminum layer as well as oxides of the non-alloying metal and the lower aluminum layer are selectively formed in alignment with one another at locations where the electrodes are not formed.