Abstract: Provided is a protective alumina film mainly containing alumina in the ?-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.

Abstract: The plasma CVD apparatus of the present invention comprises a pair of deposition rolls 2 and 3 disposed oppositely in parallel so that a substrate S wound thereon faces each other; a magnetic field generating member 12 and 13 provided inside each of the deposition rolls 2 and 3, which generates a magnetic field so as to converge plasma to the vicinity of a roll surface thereof facing a space 5 between the deposition rolls; a plasma power source 14 with polarity alternately reversing between one electrode and the other electrode; a gas supply pipe 8 for supplying a film-forming gas to the space 5; and evacuation means for evacuating the space. One electrode of the plasma power source 14 is connected to one deposition roll 2, and the other electrode thereof to the other deposition roll 3.

Abstract: An arc ion plating apparatus comprises a vacuum chamber, a rotary table for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source for bombardment for cleaning the surface of the substrate with metal ions, and an arc evaporation source for deposition group for depositing metal ions on the surface of the substrate. The arc evaporation source for deposition group is composed of a plurality of evaporation sources arranged so as to be opposite to the substrate set on the rotary table, and the arc evaporation source for bombardment is arranged so as to be opposite to the substrate, and formed so that its length in the height direction of the vacuum chamber is equal to the length between the upper and lower ends of the arc evaporation source for deposition group. According to such a structure, over temperature rise or abnormal discharge is hardly caused in the substrate at the time of bombardment, and process controllability is consequently enhanced.

Abstract: A CVD apparatus (1) is provided with: a plurality of deposition chamber units (6) which each comprise a deposition roller (2, 2) connected to a plasma power source and a unit chamber for deposition (60) housing the deposition roller (2, 2), and are disposed such that the deposition rollers (2, 2) form a line in a horizontal direction; and a connection chamber unit (7) which comprises a unit chamber for connection (70) coupled to the unit chamber for deposition (60) of the deposition chamber unit (6) and interposed between the adjacent deposition chamber units (6) to connect the deposition chamber units (6). A substrate (W) is transferred while being rolled around the respective deposition rollers (2, 2) of the respective deposition chamber units (6), and the deposition chamber units (6) decompose source gas by plasma generated near the deposition rollers (2, 2) by application of voltage to the deposition rollers (2, 2) to perform deposition processing on the substrate on the deposition rollers (2, 2).

Abstract: The disclosed plasma CVD apparatus (1) is provided with a vacuum chamber (3); a pair of deposition rollers (2, 2) disposed within the vacuum chamber (3) that are connected to both poles of an AC power supply and around which a substrate (W) is wound; a gas-supplying device (5) that supplies process gas containing a source gas to a deposition zone (D) which is a portion of or all of the region that is on one side of a line linking the centers of rotation of the pair of deposition rollers (2, 2); and a magnetic-field-generating device (7) that, by means of the AC power supply being applied to each of the deposition rollers (2, 2), forms a magnetic field that causes the source gas in a predetermined region to become plasma. The magnetic-field-generating device (7) causes the source gas in the region adjacent to the surface of the portion of the pair of deposition rollers (2, 2) located within the deposition zone (D) to become plasma, forming a plasma region (P).

Abstract: The present invention provides a method for reactive sputtering in which a reactive sputtering apparatus including a sputtering vaporization source 2 provided with a metal target disposed in a vacuum chamber 1, a sputtering power source 4 to drive the sputtering vaporization source 2, and an introduction mechanism 5 to introduce an inert gas for sputtering and a reaction gas for forming a compound with sputtered metal into the vacuum chamber 1 is used, and reactive sputtering film formation is performed on a substrate 3 disposed in the above-described vacuum chamber, wherein the method includes the steps of performing constant-voltage control to control the voltage of the above-described sputtering power source 4 at a target voltage Vs and, in addition, performing target voltage control at a control speed lower than the speed of the above-described constant-voltage control, the target voltage control operating the above-described target voltage Vs in order that the spectrum of plasma emission generated forwar

Abstract: In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

Abstract: Provided is a protective alumina film mainly containing alumina in the ?-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.

Abstract: For forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, a method of producing ? crystal structure-based alumina films efficiently includes as an early film formation, forming films under conditions suited for formation of ? crystal structure alumina. For example the forming forms films of ?crystal structure alumina in a poisoning mode discharge condition only in an early stage of film formation.

Abstract: In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: Provided is a protective alumina film mainly containing alumina in the ?-crystal structure and fine crystal grains in which one or more regions containing additionally an element other than aluminum formed along the planes in the direction almost perpendicular to the thickness direction of the protective film are present intermittently in the thickness direction inside the protective film.

Abstract: An arc ion plating apparatus comprises a vacuum chamber, a rotary table for moving a substrate within the vacuum chamber vertically relative to its height direction, an arc evaporation source for bombardment for cleaning the surface of the substrate with metal ions, and an arc evaporation source for deposition group for depositing metal ions on the surface of the substrate. The arc evaporation source for deposition group is composed of a plurality of evaporation sources arranged so as to be opposite to the substrate set on the rotary table, and the arc evaporation source for bombardment is arranged so as to be opposite to the substrate, and formed so that its length in the height direction of the vacuum chamber is equal to the length between the upper and lower ends of the arc evaporation source for deposition group. According to such a structure, over temperature rise or abnormal discharge is hardly caused in the substrate at the time of bombardment, and process controllability is consequently enhanced.

Abstract: The plasma CVD apparatus of the present invention comprises a pair of deposition rolls 2 and 3 disposed oppositely in parallel so that a substrate S wound thereon faces each other; a magnetic field generating member 12 and 13 provided inside each of the deposition rolls 2 and 3, which generates a magnetic field so as to converge plasma to the vicinity of a roll surface thereof facing a space 5 between the deposition rolls; a plasma power source 14 with polarity alternately reversing between one electrode and the other electrode; a gas supply pipe 8 for supplying a film-forming gas to the space 5; and evacuation means for evacuating the space. One electrode of the plasma power source 14 is connected to one deposition roll 2, and the other electrode thereof to the other deposition roll 3.

Abstract: Provided is a method of producing an alumina film mainly in alpha crystal structure superior in heat resistance, wherein the alumina film mainly in alpha crystal structure is formed on a substrate, independently of the kind of the substrate at relatively low temperature, by treating the substrate surface with a ceramic powder mainly having the crystal structure same as that of alumina in the alpha crystal structure, in forming the alumina film mainly in alpha crystal structure on the substrate (including the substrate having a film previously formed thereon).

Abstract: An object of the present invention is to provide a film formation apparatus capable of easily forming a film with even thickness and being excellent in mass productivity. Therefore, the film formation apparatus is provided with a substrate holder 2 having a plurality of substrate retaining portions 7 and a film forming evaporation source 3. The film forming evaporation source 3 includes a cylindrical target 11, on a surface of the cylindrical target 11 an erosion area in a shape having two straight line portions in the parallel direction to a center axis of the cylindrical target and arc portions connecting both ends of these straight line portions is formed, and film formation particles are evaporated from this erosion area to the outside in the radial direction of the cylindrical target 11.

Abstract: It is an object of the present invention to provide a sputtering apparatus capable of suppressing local consumption of axial end portions of a rotatable cylindrical target to make uniform an erosion area in the cylindrical target and thereby improving the service life of the cylindrical target. The apparatus includes a pair of sputter evaporation sources 2 each having a rotatable cylindrical target 13 and a magnetic field generating member 14 disposed inside the cylindrical target 13; and a sputter power source 3 for the supply of discharge electric power to the cylindrical targets 13, using the cylindrical targets 13 as cathodes. Both the cylindrical targets 13 are disposed in such a manner that the respective center axes are parallel to each other, and the magnetic field generating members 14 generate a magnetic field having magnetic lines of force acting in directions attracting through surfaces of the cylindrical targets 13.

Abstract: The present invention provides a process for producing an alumina coating comprised mainly of ? crystal structure on a base material.

Abstract: The present invention provides a process for producing an alumina coating comprised mainly of ? crystal structure on a base material.

Abstract: The present invention provides a process for producing an alumina coating comprised mainly of ? crystal structure on a base material.